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Toshiba America Electronic Components HN2S01FUTE85LF DIODE ARRAY SCHOTT 10V 100MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	HN2S01FUTE85LF	Cut Tape	9,345		1	1 $0.3 10 $0.204 100 $0.1228 1000 $0.1036 10000 $0.1036	Buy Now
	HN2S01FUTE85LF	Digi-Reel	9,345		1	1 $0.3 10 $0.204 100 $0.1228 1000 $0.1036 10000 $0.1036	Buy Now
	HN2S01FUTE85LF	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.06603	Buy Now
Mouser Electronics	HN2S01FUTE85LF		9,928			1 $0.3 10 $0.204 100 $0.108 1000 $0.096 10000 $0.064	Buy Now
Toshiba America Electronic Components HN2S01FU(TE85L,F) Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	HN2S01FU(TE85L,F)		1,499		243	1 - 10 - 100 - 1000 $0.288 10000 $0.288	Buy Now
Newark	HN2S01FU(TE85L,F)	Cut Tape	3,000		5	1 $0.323 10 $0.223 100 $0.166 1000 $0.139 10000 $0.139	Buy Now
TME	HN2S01FU(TE85L,F)				3	1 - 10 $0.236 100 $0.187 1000 $0.168 10000 $0.157	Get Quote
Chip One Stop	HN2S01FU(TE85L,F)	Cut Tape	1,499	0 Weeks, 1 Days	5	1 - 10 $0.288 100 $0.101 1000 $0.092 10000 $0.092	Buy Now
EBV Elektronik	HN2S01FU(TE85L,F)		3,000	15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	HN2S01FU(TE85L,F)		3,000		1	1 - 10 - 100 - 1000 - 10000 $0.2952	Buy Now

HN2S01F Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
HN2S01F	Toshiba	Array of Independent Diodes	Original	PDF
HN2S01F	Unknown	Silicon Diode	Scan	PDF
HN2S01F	Toshiba	Diode Silicon Epitaxial Schottky Barrier Type	Scan	PDF
HN2S01FU	Toshiba	Diode, Low Voltage High Speed Switching Application	Original	PDF
HN2S01FU	Toshiba	Diode Silicon Epitaxial Schottky Barrier Type	Scan	PDF
HN2S01FU	Toshiba	DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)	Scan	PDF
HN2S01FU(T5L,F,T)	Toshiba	HN2S01FU - Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R	Original	PDF
HN2S01FU(TE85L,F)	Toshiba	HN2S01FU - Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R	Original	PDF
HN2S01FUTE85LF	Toshiba	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 10V 100MA US6	Original	PDF

HN2S01F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION + • • 2 -8 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vp = 0.23V TYP. @Ijr = 5mA 0.2 0.3 + 0.2	OCR Scan	HN2S01F HN2S01F 100mA	PDF
HN2S01F Abstract: HN2S01FU 12T1 Contextual Info: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION U nit in mm 2.1 ± 0.1 • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage 1.25 ±0.1 : VF = 0.23V TYP. @IF = 5mA	OCR Scan	HN2S01 HN2S01FU HN2S01F HN2S01FU 12T1	PDF
HN2S01FU Contextual Info: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01FU HN2S01FU	PDF
HN2S01F Contextual Info: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01F HN2S01F	PDF
Contextual Info: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H • mN'm n n i F ■ mm ■ w ■ LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION • • HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vjr = 0.23V TYP. @Ijr = 5mA	OCR Scan	HN2S01F HN2S01F 100mA	PDF
HN2S01 Contextual Info: TO SHIB A HN2S01FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 7 H N < ; n i F h LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION U nit in mm 2.1 ± 0 . • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage 1.25 + 0.1 -H : Vjr = 0.23V TYP. @Ip = 5mA	OCR Scan	HN2S01FU HN2S01F 100mA HN2S01	PDF
Contextual Info: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit: mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01F HN2S01F	PDF
Contextual Info: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01FU HN2S01FU	PDF
toshiba diode 3D Abstract: 015G HN2S01F Contextual Info: T O S H IB A HN2S01F T O SH IBA DIO D E SILICON EPITAXIAL SCHO TTKY BARRIER TYPE HN2S01F U nit in mm LO W VOLTAGE HIGH SPEED SW ITCH ING A PPLICATIO N • HN 2S01F is composed of 3 independent diodes. • Low Forward Voltage + 0.2 2.8-0.3 +0.2 1.6 : Vjr = 0.23V TYP. @Ijr = 5mA	OCR Scan	HN2S01F HN2S01F toshiba diode 3D 015G	PDF
HN2S01FU Contextual Info: HN2S01FU 東芝ダイオードシリコンエピタキシャルショットキバリア形 HN2S01FU ○ 低電圧高速スイッチング用単位: mm z 独立した 3 個の SBD を搭載 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA 絶対最大定格 (Ta = 25°C)	Original	HN2S01FU 100mA HN2S01FU	PDF
Contextual Info: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01F HN2S01F	PDF
Power DIODES, toshiba Abstract: HN2S01FU Contextual Info: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application l HN2S01FU is composed of 3 independent diodes. l Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C)	Original	HN2S01FU HN2S01FU Power DIODES, toshiba	PDF
HN2S01FU Contextual Info: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application HN2S01FU is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C) Characteristic	Original	HN2S01FU HN2S01FU	PDF
Contextual Info: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION • • 2.1 ± 0.1 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : VF = 0.23V TYP. @Ijr = 5mA	OCR Scan	HN2S01 HN2S01F 100mA HN2S01FU	PDF

Power DIODES, toshiba Abstract: 015G HN2S01F Contextual Info: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm HN2S01F is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C) Characteristic	Original	HN2S01F HN2S01F 10mstransportation Power DIODES, toshiba 015G	PDF
toshiba diode 3D Abstract: HN2S01F Contextual Info: TOSHIBA HN2S01F T O SH IBA DIO D E SILICON EPITAXIAL SCHO TTKY BARRIER TYPE HN2S01F Unit in mm LO W VOLTAGE HIGH SPEED SW ITCH ING APPLICATIO N + 0.2 2 .8 - 0.3 • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage + 0.2 1.6 : VF = 0.23V TYP. @IF = 5mA	OCR Scan	HN2S01F HN2S01F toshiba diode 3D	PDF
HN2S01FU Contextual Info: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01FU HN2S01FU	PDF
JP303 Contextual Info: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION + • • 2 -8 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vp = 0.23V TYP. @Ijr = 5mA 0.2 0.3 + 0.2	OCR Scan	HN2S01F HN2S01F 100mA JP303	PDF
HN2S01F Contextual Info: HN2S01F TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application Unit in mm l HN2S01F is composed of 3 independent diodes. l Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C) Characteristic	Original	HN2S01F HN2S01F	PDF
toshiba diode 3D Abstract: HN2S01F HN2S01FU Contextual Info: TOSHIBA HN2S01 FU T O SH IBA DIO D E SILICON EPITAXIAL SCHO TTKY BARRIER TYPE H N 2 S 0 1 FU Unit in mm LO W VOLTAGE HIGH SPEED SW ITCH ING A PPLICATIO N • • 2.1 ± 0 . HN2S01F is composed of 3 independent diodes. Low Forward Voltage : Vjr = 0.23V TYP. @Ijr = 5mA	OCR Scan	HN2S01 HN2S01FU HN2S01F toshiba diode 3D HN2S01FU	PDF
33P33 Contextual Info: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION • • 2.1 ± 0.1 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : VF = 0.23V TYP. @Ijr = 5mA	OCR Scan	HN2S01 HN2S01F 100mA HN2S01FU 33P33	PDF
Contextual Info: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application HN2S01FU is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)	Original	HN2S01FU HN2S01FU	PDF
HN2S01F Contextual Info: HN2S01F 東芝ダイオードシリコンエピタキシャルショットキバリア形 HN2S01F ○ 低電圧高速スイッチング用単位: mm z 独立した 3 個の SBD を搭載 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA 絶対最大定格 (Ta = 25°C)	Original	HN2S01F 100mA HN2S01F	PDF
SCJ0004N Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版ダイオード整流ダイオード可変容量ダイオード高周波スイッチ用ダイオードツエナーダイオードスイッチングダイオードショットキーバリアダイオード	Original	SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT	PDF

HN2S01F Search Results

HN2S01F Price and Stock

Toshiba America Electronic Components HN2S01FUTE85LF

Toshiba America Electronic Components HN2S01FU(TE85L,F)

HN2S01F Datasheets (9)

HN2S01F Datasheets Context Search

HN2S01F

HN2S01FU

HN2S01F

HN2S01

toshiba diode 3D

HN2S01FU

Power DIODES, toshiba

HN2S01FU

Power DIODES, toshiba

toshiba diode 3D

HN2S01FU

JP303

HN2S01F

toshiba diode 3D

33P33

HN2S01F

SCJ0004N