DSAE0013608.pdf by Infineon Technologies

Partial File Text IPB08CNE8N G IPI08CNE8N G OptiMOS®2 Power-Transistor IPP08CNE8N G Product Summary Features V DS 8.2 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),m
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
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08CNE8N IPP08CNE8N PG-TO220-3