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Rochester Electronics LLC IPP08CNE8NG N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP08CNE8NG	Bulk			315	1 - 10 - 100 - 1000 $0.95 10000 $0.95	Buy Now
Infineon Technologies AG IPP08CNE8N-G MOSFET N-CH 85V 95A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP08CNE8N-G	Tube			500	1 - 10 - 100 - 1000 $1.28596 10000 $1.28596	Buy Now
Infineon Technologies AG IPB08CNE8N-G MOSFET N-CH 85V 95A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB08CNE8N-G	Reel			1,000	1 - 10 - 100 - 1000 $1.11723 10000 $1.11723	Buy Now
Infineon Technologies AG IPP08CNE8NG IPP08CNE8 - Power Field-Effect Transistor, 95A, 85V, N-Channel, MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IPP08CNE8NG		925		1	1 $0.9167 10 $0.9167 100 $0.8617 1000 $0.7792 10000 $0.7792	Buy Now

08CNE8N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 8.2 m: ID 95 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	PDF	IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 08CNE8N PG-TO262-3
08CNE8N Abstract: No abstract text available Text: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	PDF	IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 08CNE8N PG-TO262-3 08CNE8N
08CNE8N Abstract: IPP08CNE8N JESD22 PG-TO220-3 Text: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	PDF	IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CNE8N 08CNE8N JESD22 PG-TO220-3
08CNE8N Abstract: IPP08CNE8N JESD22 PG-TO220-3 D475A C3175 Text: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	PDF	IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CNE8N 08CNE8N JESD22 PG-TO220-3 D475A C3175
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	PDF	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
IEC61249-2-21 Abstract: IPP08CNE8N JESD22 PG-TO220-3 diode R 107 Text: 08CNE8N G 08CNE8N G OptiMOS 2 Power-Transistor 08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	PDF	IPB08CNE8N IPI08CNE8N IPP08CNE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 IEC61249-2-21 JESD22 PG-TO220-3 diode R 107