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    DSASW00171300.pdf by Excelics Semiconductor

    • Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs (Curtice-Ettenburg Model) Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS
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