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    Excelics Semiconductor Inc EPA040A

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    EPA040A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPA040A Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF
    EPA040A-70 Excelics Semiconductor 6-10V high efficiency heterojunction power FET Original PDF
    EPA040AV Excelics Semiconductor High Efficiency Heterojunction Power FET Original PDF

    EPA040A Datasheets Context Search

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    EPA040A

    Abstract: No abstract text available
    Text: Excelics EPA040A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		PDF EPA040A 18GHz 12GHz EPA040A

    EPA040A-70

    Abstract: igd 515 Excelics 70mil PACKAGE
    Text: EPA040A-70 High Efficiency Heterojunction Power FET UPDATED 11/22/2004 FEATURES • • • • • • NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE +25.5 dBm OUTPUT POWER AT 1dB COMPRESSION 7.0 dB POWER GAIN AT 12GHz 0.3 x 800 MICRON RECESSED “MUSHROOM” GATE


    Original     		PDF EPA040A-70 70MIL 12GHz 18GHz EPA040A-70 igd 515 Excelics 70mil PACKAGE

    EPA040A-70

    Abstract: No abstract text available
    Text: Excelics EPA040A-70 DATA SHEET High Efficiency Heterojunction Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPA040A-70 70mil 18GHz 12GHz Com52 EPA040A-70

    EPA040A

    Abstract: EPA040AV
    Text: EPA040A/ EPA040AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN FOR EPA040A AND 12.0dB FOR EPA040AV AT 18GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPA040A/ EPA040AV EPA040A EPA040AV 18GHz EPA040AV)

    EPA040A

    Abstract: EPA040AV
    Text: Excelics EPA040A/EPA040AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +24.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN FOR EPA040A AND 12.0dB FOR EPA040AV AT 18GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPA040A/EPA040AV EPA040A EPA040AV 18GHz EPA040A 12GHz EPA040AV.

    s-parameter s11 s12 s21

    Abstract: EPA040A S21-Magnitude GHz-210 Bias "One Year Repeatability"
    Text: EXCELICS SEMICONDUCTOR, INC. S-Parameter Uniformity Data was measured on EPA040A devices, from 1 to 26GHz. Devices were assembled in a microstrip test fixture. S-parameters include bond wires. Devices were biased at 8V, half Idss. Consequently this data includes not only variations in device characteristics, but also variations


    Original     		PDF EPA040A 26GHz. s-parameter s11 s12 s21 S21-Magnitude GHz-210 Bias "One Year Repeatability"

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		PDF EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		PDF EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C

    EPA025A70

    Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A
    Text: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB


    Original     		PDF RTC/10/01/98 EPA080A 12GHz EPA060B EPA040A EPA025A V/15mA V/10mA EPA025A70 EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A