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    MRF6VP11KHR6 datasheet by Freescale Semiconductor

    • RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 1000W NI1230
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.75
    • 8541.29.00.80
    • Find it at Findchips.com
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    MRF6VP11KHR6 datasheet preview

    MRF6VP11KHR6 Frequently Asked Questions (FAQs)

    • The MRF6VP11KHR6 is a 1.8 GHz to 6 GHz LDMOS RF power transistor, so its maximum operating frequency is 6 GHz.
    • The MRF6VP11KHR6 is typically used in wireless infrastructure applications such as base stations, repeaters, and amplifiers for cellular, WiMAX, and LTE systems.
    • The MRF6VP11KHR6 has a maximum power rating of 11 W (CW) and 22 W (pulsed) at 2 dB compression point.
    • The thermal resistance of the MRF6VP11KHR6 is typically around 1.5°C/W (junction-to-case) and 5°C/W (junction-to-ambient) when mounted on a suitable heat sink.
    • No, the MRF6VP11KHR6 is an unmatched device, and external matching networks are required to achieve optimal performance.
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