MRF6VP11KHR6 Search Results

MRF6VP11KHR6 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRF6VP11KHR6		Freescale Semiconductor	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET		Original	PDF
MRF6VP11KHR6		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 1000W NI1230		Original	PDF

MRF6VP11KHR6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MRF6VP11KH Abstract: J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 0, 1/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical	Original	MRF6VP11KH MRF6VP11KHR6 MRF6VP11KH J647 MRF6VP11KHR6 mosfet mttf D6971 ptf561 A114 A115 AN1955 C101	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 7, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical	Original	MRF6VP11KH MRF6VP11KHR6	PDF
mccfr0w4j Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 5, 7/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical	Original	MRF6VP11KH MRF6VP11KHR6 mccfr0w4j	PDF
mrf6vp11kh Abstract: AN1955 A114 A115 C101 JESD22 MRF6VP11KHR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 4, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical	Original	MRF6VP11KH MRF6VP11KHR6 mrf6vp11kh AN1955 A114 A115 C101 JESD22 MRF6VP11KHR6	PDF
250GX-0300-55-22 Abstract: CPF320R000FKE14 MRF6VP11KH 1812SMS-82NJLC ATC200B103KT50X ATC100B101JT500XT AN1955 JESD22-A114 MRF6VP11KHR6 T491X226K035AT Text: Document Number: MRF6VP11KH Rev. 6, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical	Original	MRF6VP11KH MRF6VP11KHR6 250GX-0300-55-22 CPF320R000FKE14 MRF6VP11KH 1812SMS-82NJLC ATC200B103KT50X ATC100B101JT500XT AN1955 JESD22-A114 MRF6VP11KHR6 T491X226K035AT	PDF
mosfet mttf Abstract: MRF6VP11KH MRF6VP11KHR6 tuo-4 AN1955 T491X226K035AT capacitor mttf FAIR-RITE 2743021447 EKME MCCFR Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 7, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical	Original	MRF6VP11KH MRF6VP11KHR6 mosfet mttf MRF6VP11KH MRF6VP11KHR6 tuo-4 AN1955 T491X226K035AT capacitor mttf FAIR-RITE 2743021447 EKME MCCFR	PDF
C15B1 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 3, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical	Original	MRF6VP11KH MRF6VP11KHR6 C15B1	PDF
MRF6VP11KH Abstract: ATC100B180JT500X ATC100B101JT500XT MRF6VP11KHR6 A114 A115 AN1955 C101 JESD22 CPF320R000FKE14 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 1, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP11KHR6 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical	Original	MRF6VP11KH MRF6VP11KHR6 MRF6VP11KH ATC100B180JT500X ATC100B101JT500XT MRF6VP11KHR6 A114 A115 AN1955 C101 JESD22 CPF320R000FKE14	PDF
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF
power transistors table Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,	Original		PDF
BA 7891 NG Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 Text: 释放潜能 RF 手册第 16 版高性能 RF 产品应用和设计手册 2012 年 6 月恩智浦助您释放下一代 RF 和微波设计的潜能恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进	Original	PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104	PDF
MRF8P9040N Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1 Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial	Original		PDF
MCCFR0W4J0102A50 Abstract: MRF6VP11KH mccfr0w4j CPF32 MRF6VP11KHR6 MRF6VP11KGSR5 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP11KH Rev. 8, 9/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial,	Original	MRF6VP11KH MRF6VP11KHR6 MRF6VP11KGSR5 MCCFR0W4J0102A50 mccfr0w4j CPF32 MRF6VP11KGSR5	PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original		PDF