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    IRFP460 datasheet by International Rectifier

    • Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)
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    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRFP460 datasheet preview

    IRFP460 Frequently Asked Questions (FAQs)

    • The maximum SOA for the IRFP460 is typically defined by the voltage and current ratings, but it's also dependent on the application and thermal conditions. A general guideline is to ensure that the device operates within the boundaries of the SOA curve provided in the datasheet, taking into account the maximum voltage, current, and power dissipation.
    • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal paste or thermal tape, and ensuring good contact between the device and the heat sink. Additionally, the PCB design should allow for good airflow and heat dissipation.
    • The recommended gate drive voltage for the IRFP460 is typically between 10V to 15V, depending on the application and switching frequency. A higher gate drive voltage can help reduce switching losses, but it may also increase the risk of gate oxide damage.
    • To protect the IRFP460 from overvoltage and overcurrent conditions, it's recommended to use a combination of voltage and current sensing circuits, along with protection devices such as zener diodes, TVS diodes, or fuses. Additionally, the device should be operated within its specified voltage and current ratings, and the application should be designed to prevent overvoltage and overcurrent conditions from occurring.
    • The maximum allowed dv/dt for the IRFP460 is typically around 10kV/μs, but this can vary depending on the application and operating conditions. Exceeding this limit can cause the device to malfunction or fail. It's essential to ensure that the device is operated within its specified dv/dt rating to prevent premature failure.
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