The maximum junction temperature (Tj) for the AUIRF7379QTR is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for optimal performance and reliability.
To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a metal plate. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is designed for the maximum power dissipation of the device.
For optimal performance, it's recommended to follow a 2-layer or 4-layer PCB layout with a solid ground plane and a separate power plane. Keep the high-frequency traces short and away from the device's pins. Use a via-in-pad design to reduce thermal resistance and improve heat dissipation.
The AUIRF7379QTR is not hermetically sealed, so it's not recommended for use in high-humidity environments. If you must use it in such an environment, ensure the device is properly sealed or conformally coated to prevent moisture ingress.
The recommended gate drive voltage for the AUIRF7379QTR is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
AUIRF7379QTR datasheet
by International Rectifier
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