IRF7379QPBF Search Results
IRF7379QPBF Price and Stock
International Rectifier IRF7379QPBFHEXFET POWER MOSFET Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF7379QPBF | 370 |
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IRF7379QPBF Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IRF7379QPBF | International Rectifier | HEXFET Power MOSFET | Original |
IRF7379QPBF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Transistor Mosfet N-Ch 30VContextual Info: PD - 96111A IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free 6 ' |
Original |
6111A IRF7379QPbF EIA-481 EIA-541. Transistor Mosfet N-Ch 30V | |
Contextual Info: PD - 96111 IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET |
Original |
IRF7379QPbF EIA-481 EIA-541. | |
Contextual Info: PD - 96111B IRF7379QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 |
Original |
96111B IRF7379QPbF EIA-481 EIA-541. | |
irf MOSFET p-CHContextual Info: PD - 96111B IRF7379QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 |
Original |
96111B IRF7379QPbF thi61 EIA-481 EIA-541. irf MOSFET p-CH |