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    IRF7379QPBF Price and Stock

    International Rectifier IRF7379QPBF

    HEXFET POWER MOSFET Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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    IRF7379QPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF7379QPBF
    International Rectifier HEXFET Power MOSFET Original PDF

    IRF7379QPBF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Transistor Mosfet N-Ch 30V

    Contextual Info: PD - 96111A IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free 6   '


    Original
    6111A IRF7379QPbF EIA-481 EIA-541. Transistor Mosfet N-Ch 30V PDF

    Contextual Info: PD - 96111 IRF7379QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET


    Original
    IRF7379QPbF EIA-481 EIA-541. PDF

    Contextual Info: PD - 96111B IRF7379QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1


    Original
    96111B IRF7379QPbF EIA-481 EIA-541. PDF

    irf MOSFET p-CH

    Contextual Info: PD - 96111B IRF7379QPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1


    Original
    96111B IRF7379QPbF thi61 EIA-481 EIA-541. irf MOSFET p-CH PDF