DSAHI00067450.pdf by Freescale Semiconductor

Partial File Text Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver application
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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