DSAISS00018199.pdf by Infineon Technologies

Partial File Text IPI076N12N3 G OptiMOSTM3 Power-Transistor IPP076N12N3 G Product Summary Features VDS 7.6 mW ID â¢ Excellent gate charge x R DS(on) product (FOM) V RDS(on)max â¢ N
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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