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    076N12N Search Results

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    076N12N Price and Stock

    Infineon Technologies AG IPI076N12N3GAKSA1

    MOSFET N-CH 120V 100A TO262-3
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    DigiKey IPI076N12N3GAKSA1 Tube 476 1
    • 1 $3.75
    • 10 $2.462
    • 100 $3.75
    • 1000 $1.31283
    • 10000 $1.29563
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    EBV Elektronik IPI076N12N3GAKSA1 17 Weeks 500
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    Infineon Technologies AG IPP076N12N3GXKSA1

    MOSFET N-CH 120V 100A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP076N12N3GXKSA1 Tube 194 1
    • 1 $3.94
    • 10 $3.94
    • 100 $3.94
    • 1000 $1.38816
    • 10000 $1.382
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    Newark IPP076N12N3GXKSA1 Bulk 1
    • 1 $3.99
    • 10 $3.61
    • 100 $3
    • 1000 $2.6
    • 10000 $2.6
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    Chip1Stop IPP076N12N3GXKSA1 Tube 1,400
    • 1 $2.56
    • 10 $1.95
    • 100 $1.47
    • 1000 $1.47
    • 10000 $1.47
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    EBV Elektronik IPP076N12N3GXKSA1 17 Weeks 500
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    Win Source Electronics IPP076N12N3GXKSA1 1,027
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    • 100 $2.084
    • 1000 $1.806
    • 10000 $1.806
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    Infineon Technologies AG IPI076N12N3GXK

    Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI076N12N3GAKSA1)
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    Avnet Americas IPI076N12N3GXK Tube 16 Weeks 500
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    Infineon Technologies AG IPP076N12N3GXK

    Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP076N12N3GXKSA1)
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    Avnet Americas IPP076N12N3GXK Tube 16 Weeks 500
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    Infineon Technologies AG IPP076N12N3 G

    MOSFETs N-Ch 120V 100A TO220-3 OptiMOS 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPP076N12N3 G 294
    • 1 $3.6
    • 10 $3.58
    • 100 $1.74
    • 1000 $1.38
    • 10000 $1.38
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    076N12N Datasheets Context Search

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    076N12N

    Abstract: IPP076N12N3 G JESD22 PG-TO220-3
    Text: 076N12N3 G OptiMOSTM3 Power-Transistor 076N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on)max 7.6 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPI076N12N3 IPP076N12N3 PG-TO262-3 PG-TO220-3 076N12N 076N12N IPP076N12N3 G JESD22 PG-TO220-3

    076N12N

    Abstract: No abstract text available
    Text: 076N12N3 G OptiMOSTM3 Power-Transistor 076N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 120 V RDS(on)max 7.6 mW ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPI076N12N3 IPP076N12N3 PG-TO262-3 PG-TO220-3 076N12N 076N12N