DSASW00347263.pdf by Sumitomo Electric

Partial File Text EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm (typ.) @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18d
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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2.2GHz EGN21C160I2D GaN amplifier