DSA00588103.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RJK2017DPP Silicon N Channel MOS FET High Speed Power Switching Features · Low on-resistance RDS(on) = 0.036 typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) · Low leakage cur
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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