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Rochester Electronics LLC RJK2017DPE-00-J3 N-CHANNEL POWER MOSFET
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DigiKey	RJK2017DPE-00-J3	Bulk			133	1 - 10 - 100 - 1000 $2.27 10000 $2.27	Buy Now
Rochester Electronics LLC RJK2017DPP-90-T2 N-CHANNEL POWER MOSFET
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DigiKey	RJK2017DPP-90-T2	Bulk			141	1 - 10 - 100 - 1000 $2.14 10000 $2.14	Buy Now
Rochester Electronics LLC RJK2017DPE-WS-J3 N-CHANNEL POWER MOSFET
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DigiKey	RJK2017DPE-WS-J3	Bulk			133	1 - 10 - 100 - 1000 $2.27 10000 $2.27	Buy Now
Renesas Electronics Corporation RJK2017DPP-M0-T2 ABU / MOSFET
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DigiKey	RJK2017DPP-M0-T2	Tube			1	1 $2.44 10 $2.44 100 $2.1879 1000 $1.9575 10000 $1.9575	Buy Now
Rochester Electronics LLC RJK2017DPP-90-T2F N-CHANNEL POWER MOSFET
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DigiKey	RJK2017DPP-90-T2F	Bulk			141	1 - 10 - 100 - 1000 $2.14 10000 $2.14	Buy Now

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RJK2017 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK2017DPP-M0#T2		Renesas Electronics America	ABU / MOSFET		Original	PDF

RJK2017 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Datasheet RJK2017DPP-M0 200V - 45A - MOS FET High Speed Power Switching R07DS0664EJ0100 Rev.1.00 Feb 03, 2012 Features • Low on-resistance RDS on = 0.036  typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching	Original	RJK2017DPP-M0 R07DS0664EJ0100 PRSS0003AF-A O-220FL)	PDF
rjk2017 Abstract: RJK2017DPP-00-T2 RJK2017DPP REJ03G1797-0200 Contextual Info: RJK2017DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1797-0200 Rev.2.00 Aug 26, 2009 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate	Original	RJK2017DPP REJ03G1797-0200 PRSS0003AB-A O-220FN) rjk2017 RJK2017DPP-00-T2 RJK2017DPP	PDF
RJK2017 Contextual Info: Preliminary Datasheet RJK2017DPP R07DS0416EJ0300 Previous: REJ03G1797-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current	Original	RJK2017DPP R07DS0416EJ0300 REJ03G1797-0200) PRSS0003AB-A O-220FN) RJK2017	PDF
RJK2017 Abstract: RJK2017DPE Contextual Info: RJK2017DPE Silicon N Channel MOS FET High Speed Power Switching REJ03G1589-0400 Rev.4.00 Dec 02, 2009 Features • Low on-resistance RDS on = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25 °C) • Low leakage current • High speed switching Outline	Original	RJK2017DPE REJ03G1589-0400 PRSS0004AE-B RJK2017 RJK2017DPE	PDF
RJK2017 Contextual Info: Preliminary Datasheet RJK2017DPP R07DS0416EJ0300 Previous: REJ03G1797-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current	Original	RJK2017DPP R07DS0416EJ0300 REJ03G1797-0200) PRSS0003AB-A O-220FN) RJK2017	PDF
RJK2017 Contextual Info: Preliminary Datasheet RJK2017DPP-M0 200V - 45A - MOS FET High Speed Power Switching R07DS0664EJ0100 Rev.1.00 Feb 03, 2012 Features • Low on-resistance RDS on = 0.036  typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching	Original	RJK2017DPP-M0 R07DS0664EJ0100 PRSS0003AF-A O-220FL) RJK2017	PDF
rjk2017 Abstract: RJK2017DPE Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
RJK2017 Abstract: RJK2017DPP-00-T2 Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF