DSA007304.pdf by Fairchild Semiconductor

Partial File Text UniFETTM FDB52N20 200V N-Channel MOSFET Features Description · 52A, 200V, RDS(on) = 0.049 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using F
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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