DSA00102821.pdf by Renesas Technology

Partial File Text RQA0011DNS Silicon N-Channel MOS FET REJ03G1600-0100 Rev.1.00 Nov 08, 2007 Features · High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% (f = 520 M
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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