DSA2IH00205882.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE SEMICONDUCTOR M IC R O W A V E P O W E R GaAs FET TECHNICAL DATA FEATURES: HIGH POWER P-jdB = 33 5 dBm at f = 14.5 GHz HIGH GAIN GidB = 6.5 dB at f = 14.5 GHz JS8856
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RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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JS8856 JS8856-AS

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