DSA00153675.pdf by Cree

Partial File Text CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree's CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate lengt
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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bonding wire cree CGHV1J025D G40V4