DSAASSA0004582.pdf
by Toshiba
- TC58NYG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Elect
- Original
- Unknown
- Unknown
- Transferred
- Find it at Findchips.com
