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    TC58NYG0S Price and Stock

    KIOXIA TC58NYG0S3HBAI4

    IC FLASH 1GBIT PARALLEL 63TFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG0S3HBAI4 Tray 210 1
    • 1 $4.04
    • 10 $2.63
    • 100 $2.2636
    • 1000 $1.8
    • 10000 $1.8
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    Mouser Electronics TC58NYG0S3HBAI4 200
    • 1 $3.63
    • 10 $2.63
    • 100 $1.8
    • 1000 $1.8
    • 10000 $1.8
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    KIOXIA TC58NYG0S3HBAI6

    NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM)
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    Mouser Electronics TC58NYG0S3HBAI6
    • 1 $2.73
    • 10 $2.56
    • 100 $2.39
    • 1000 $2.21
    • 10000 $2.17
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    Toshiba America Electronic Components TC58NYG0S3HBAI6

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TC58NYG0S3HBAI6 343
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    ComSIT USA TC58NYG0S3HBAI6 30
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    KIOXIA TC58NYG0S3HBAI6_TRAY

    1Gb SLC 24nm FBGA Tray LB 18 I PL1 (Alt: TC58NYG0S3HBAI6_TRAY)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik TC58NYG0S3HBAI6_TRAY 13 Weeks 338
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    KIOXIA TC58NYG0S3HBAI4_REEL

    (Alt: TC58NYG0S3HBAI4_REEL)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik TC58NYG0S3HBAI4_REEL 13 Weeks 210
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    TC58NYG0S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58NYG0S3HBAI6 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 1G PARALLEL 67VFBGA Original PDF

    TC58NYG0S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC58NYG0S3E

    Abstract: TC58NYG0S3ETA00 TC58NYG0S
    Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S PDF

    TC58NYG0S3ETAI0

    Abstract: TC58NYG0S
    Text: TC58NYG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NYG0S3ETAI0 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETAI0 TC58NYG0S PDF

    TC58NVG0S3EBA

    Abstract: TC58NYG0S3EBAI4 TC58NYG0S3E P-TFBGA63-0911-0 TC58NYG0S R/PA15
    Text: TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NYG0S3EBAI4 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3EBA TC58NYG0S3EBAI4 P-TFBGA63-0911-0 TC58NYG0S R/PA15 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		TC58NYG0S3EBAI4 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3HBAI6is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.


    Original     		TC58NYG0S3HBAI6 TC58NYG0S3HBAI6is 688bits) 1024blocks. 2176-byte 2012-08-31C PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3HBAI4 is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.


    Original     		TC58NYG0S3HBAI4 TC58NYG0S3HBAI4 688bits) 1024blocks. 2176-byte 2012-10-01C PDF

    THGBM4G4D1HBAIR

    Abstract: TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR
    Text: SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2011/9 SCE0004L NAND Flash Memory SLC Small Block Capacity 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits Part Number


    Original     		SCE0004L TC58DVM92A5TA00 TC58DVM92A5TAI0 TC58DVM92A5BAJ3 TC58DYM92A5TA00 TC58DYM92A5TAI0 TC58DYM92A5BAJ3 TC58DVG02A5TA00 TC58DVG02A5TAI0 TC58DVG02A5BAJ4 THGBM4G4D1HBAIR TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR PDF

    TC58NVG2S0FTA00

    Abstract: TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25
    Text: NAND Flash Memory SLC Middle Capacity Product list of NAND Flash Memory SLC Middle Capacity Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number Serial


    Original     		48-P-1220- TC58NVM9S3ETAI0 TC58NVM9S3EBAI4 TC58NVM9S3EBAI6 TC58NYM9S3EBAI4 TC58NYM9S3EBAI6 TC58DVG02D5TA00 TC58NVG2S3EBAI5 P-TFBGA63-1013- TC58NYG2S3EBAI5 TC58NVG2S0FTA00 TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25 PDF