NPN TRANSISTOR Z4
Abstract: b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595
Text: ,-=r=-= -= ZY f .- = r = anAMPcompany * Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 16.51 - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation
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PH3134-65M
225t010
iEV-15
NPN TRANSISTOR Z4
b 595 transistor
transistor z4 n
transistor ZY
PH3134-65M
572i
transistor b 595
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New Jersey Semiconductor
Abstract: No abstract text available
Text: <zy\£.uj J. , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1941 Silicon PNP Power Transistor I I \ •-< DESCRIPTION • Low Collector Saturation Voltage: VCE(sat)=- 2.0V(Min) @lc=- 7A
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2SA1941
2SC51
-50mA;
-140V;
New Jersey Semiconductor
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AE8 diode
Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G
Text: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/ D4@A8 >= X" /- I9 6 O R >? 4@0B 8=6 B
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IPB120N06N
IPP120N06N
AE8 diode
4a8 diode
diode marking A43
DIODE S6 4aa
BV99
aA88
IPB120N06N G
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IPP050N06NG
Abstract: diode a43 IPB050N06NG
Text: IPP050N06N G IPB050N06N G "%&$!"# Power-Transistor Product Summary Features V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; D4@A8 >= I9 . I ,&/ X" ( 6 O R >? 4@0B 8=6 B
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IPP050N06N
IPB050N06N
IPP050N06NG
diode a43
IPB050N06NG
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTA2015 TRANSISTOR PNP FEATURES SOT–323 Excellent hFE Linearity Complementary to KTC4076 APPLICATIONS General Purpose Switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-323
KTA2015
KTC4076
-100mA
-400mA
-100mA,
-10mA
-20mA
25Min
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transistor ZY
Abstract: ZY marking zy- transistor marking zo sot KTC4076 marking ZY KTA2015W marking code ZO
Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. PC=100mW z Excellent hFE Linearity. z Complementary to KTC4076. z Small package. KTA2015W Pb Lead-free APPLICATIONS z General purpose application and switching application.
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KTA2015W
100mW)
KTC4076.
OT-323
BL/SSSTF048
transistor ZY
ZY marking
zy- transistor
marking zo sot
KTC4076
marking ZY
KTA2015W
marking code ZO
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marking ZO
Abstract: 2SA1588
Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1588 Features Excellent hFE linearity. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage
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2SA1588
-100mA
-100mA,
-10mA
-20mA
marking ZO
2SA1588
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTA2015 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM: 0.1 W (Tamb=25℃) Collector current -0.5 A ICM: Collector-base voltage
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OT-323
OT-323
KTA2015
-100mA
-400mA
-100mA,
-10mA
-20mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTD1898 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage
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OT-89
KTD1898
OT-89
500mA
500mA,
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transistor marking zg
Abstract: transistor zg zy- transistor KTD1898 ZY marking
Text: KTD1898 KTD1898 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM: 1 A Collector-base voltage 100 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃
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KTD1898
OT-89
500mA
500mA,
transistor marking zg
transistor zg
zy- transistor
KTD1898
ZY marking
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KTA2015
Abstract: No abstract text available
Text: KTA2015 SOT-323 KTA2015 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 0.1 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
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KTA2015
OT-323
-100mA
-400mA
-100mA,
-10mA
-20mA
KTA2015
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTD1898 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z General Purpose Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-89-3L
OT-89-3L
KTD1898
500mA
500mA
100MHz
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marking 1301 sot-23
Abstract: sot-23 Marking zy 2SA1182 zy marking sot23 1301 sot marking zo sot -6
Text: Transistors SMD Type Silicon PNP Epitaxial 2SA1182 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT-23 package 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector
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2SA1182
OT-23
OT-23
marking 1301 sot-23
sot-23 Marking zy
2SA1182
zy marking sot23
1301 sot
marking zo sot -6
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KTA2015
Abstract: marking Zo
Text: KTA2015 PNP General Purpose Transistors P b Lead Pb -Free 3 1 2 SOT-323 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous
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KTA2015
OT-323
OT-323
-100mA,
-10mA
-100mA
-20mA
07-Apr-10
KTA2015
marking Zo
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transistor smd zy
Abstract: smd transistor zy zy smd transistor transistor SMD marking ZY smd marking zx zy- transistor transistor smd zx smd transistor 560 2SB1628 smd transistor 660
Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1628 Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to Base Voltage Parameter VCBO -20 V Collector to Emitter Voltage
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2SB1628
transistor smd zy
smd transistor zy
zy smd transistor
transistor SMD marking ZY
smd marking zx
zy- transistor
transistor smd zx
smd transistor 560
2SB1628
smd transistor 660
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transistor 3s4
Abstract: SOT-103 T-35-Z7 SOT103 BF964S 35z7 transistor SOT103 mosfet bf964
Text: PHILIPS INTERNATIONAL SbE ]> B F 9 6 4 S _ 711Dô2fci 003*4054 3S4 M P H IN FO R D E T A IL E D INFORM ATION SEE T H E L A T E S T ISSU E O F HANDBOOK SC07 OR D A T A S H E E T T~3S~Zy S IL IC O N N -C H A N N E L D U AL G A T E M O S -F E T Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected,
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BF964S_
711002b
003WD5M
T-35-Z7
OT103.
transistor 3s4
SOT-103
T-35-Z7
SOT103
BF964S
35z7
transistor SOT103 mosfet
bf964
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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OCR Scan
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C3656
Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396
Text: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)
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11-sized
2SA1676
/2SC4396
2SA1677
/2SC4397
2SA1678
/2SC4398
2SA1722
/2SC4498
2SA1341
C3656
C4397
c3399
A1678
transistor C4047
c3396
a1343
C3863
A1526
C4396
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C3656
Abstract: C4397 transistor c3399 a1678 transistor C4047 A1526 2sc3916 2SA1573 C3396 a1343
Text: S A if V O Resistance-Contained Transistor Series F eatu re s App l i e ; a t i o n s ☆ Swi tch ing circuit. ☆ Inverter circuit. ☆ Interi ace circuit. ☆ Driver circuit. oto I C-* lOOmA S e r i e s Ta*25"C ( ): Ma rk ing on MCP, CP. For PNP Type No
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2SA1676
/2SC4396
2SA1677
/2SC4397
2SA1678
/2SC4398
2SA1722
/2SC4498
2SA1341
2SA1508
C3656
C4397
transistor c3399
a1678
transistor C4047
A1526
2sc3916
2SA1573
C3396
a1343
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2SB1460
Abstract: No abstract text available
Text: 2SB1460 h 7 > y ^ ^ //Transistors I e £ * V 7 j u7‘ I' - P NP y 'J I] > h -7 > y Epitaxial Planar PN P Silicon Transistor f é U iM ll ^ J ílí lf f l/ L o w Freq. Power Amp. • • « ft Dimensions Unit : mm 1) V c e (sat) V c e (sat)=— 0.2V(Typ.)
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2SB1460
100MHz
2SB1460
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MG20Q6EK1
Abstract: 3Tg 21
Text: MG20Q6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. 10T0R CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain
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MG20Q6EK1
10T0R
MG20Q6EK1
3Tg 21
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2S114
Abstract: 2SA1423 3AAP 2SC3656
Text: Ordering number : EN 16 8 5 A 2SA1423/2SC3656 i PNP/NPN Epitaxial Planar Silicon Transistors SAKYO 080 Switching Appl ications with Bias Resistor finterface circuì/ Switching circuit, inverter circuit Features . With bias resistor (RlslOkU ,R2=10kfì ).
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2SA1423/2SC3656
2SA1423
2S114
2SA1423
3AAP
2SC3656
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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Transistor BFR 135
Abstract: Transistor BFR Transistor BFR 35 transistor K 1412
Text: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f f = 8GHz F = 1.3dB at 900MHz 1=B 11 m Q62702-F1510 o li RCs CO BFR 193W 10 ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
OT-323
Q62702-F1510
Transistor BFR 135
Transistor BFR
Transistor BFR 35
transistor K 1412
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