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    ZXMN10A08E6TC Price and Stock

    Diodes Incorporated ZXMN10A08E6TC

    MOSFET N-CH 100V 1.5A SOT26
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    DigiKey ZXMN10A08E6TC Reel 10,000
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    Avnet Americas ZXMN10A08E6TC Reel 8 Weeks 10,000
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    Mouser Electronics ZXMN10A08E6TC
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    Future Electronics ZXMN10A08E6TC Reel 8 Weeks 10,000
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    ZXMN10A08E6TC Reel 8 Weeks 10,000
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    Avnet Silica ZXMN10A08E6TC 70,000 10 Weeks 10,000
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    New Advantage Corporation ZXMN10A08E6TC 60,000 1
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    Diodes Incorporated ZXMN10A08E6TA

    MOSFETs 100V N-Chnl UMOS
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    Mouser Electronics ZXMN10A08E6TA 15,949
    • 1 $0.59
    • 10 $0.464
    • 100 $0.318
    • 1000 $0.229
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    Zetex / Diodes Inc ZXMN10A08E6TC

    Trans MOSFET N-CH 100V 3.5A 6-Pin SOT-26 T/R
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    Verical ZXMN10A08E6TC 10,000 10,000
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    ZXMN10A08E6TC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN10A08E6TC Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN10A08E6TC Zetex Semiconductors 100V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF

    ZXMN10A08E6TC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary V BR DSS 100V Features and Benefits Max RDS(on) • • • • • Max ID TA = 25°C (Note 5) 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V 1.68A


    Original     		PDF ZXMN10A08E6 AEC-Q101 DS31909

    10A8 SOT23-6

    Abstract: 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V; RDS(ON)=0.4⍀ D=1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC 10A8 SOT23-6 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC

    ZXMN10A08E6

    Abstract: 10A8 SOT23-6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.4 ID= 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC ZXMN10A08E6 10A8 SOT23-6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC

    fs405

    Abstract: No abstract text available
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ; ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC TX75248, fs405

    10A8 SOT23-6

    Abstract: 10A8 MOSFET sot23-6 TOP marking sot23-6 power MOSFET sot23-6 ZXMN10A08E6TC MARKING A SOT23-6 DSS SOT23 sot23-6 ZXMN10A08E6
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6T ZXMN10A08E6TC 10A8 SOT23-6 10A8 MOSFET sot23-6 TOP marking sot23-6 power MOSFET sot23-6 ZXMN10A08E6TC MARKING A SOT23-6 DSS SOT23 sot23-6 ZXMN10A08E6

    GE1030

    Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
    Text: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds


    Original     		PDF DCS/PCN-1119 PCN-1119 OT223, OD323, OD523, OT323, OT23-6, OT23-5 GE1030MOT223 ZXTP2014GTC GE1030 FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6

    BAT54CTA

    Abstract: BZT52C3V9LP DCX124EK DCX68 DCX69 DDTB123YC MMDTA06
    Text: DATE: 7th November, 2013 PCN #: 2113 – Rev01 PCN Title: Conversion to Copper Bond Wire and Qualification of Additional Wafer Source on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being


    Original     		PDF Rev01 BAS70W-05-7-F ZLLS1000TA BAS20W-7-F BAS521-7 1N5711WS-7-F BAS70W-06-7-F ZLLS500TA BAS21W-7-F BAS521LP-7 BAT54CTA BZT52C3V9LP DCX124EK DCX68 DCX69 DDTB123YC MMDTA06

    ZXMN10A08E6

    Abstract: 10A8 ZXMN10A08E6TA ZXMN10A08E6TC DS31909 marking 10A8 10A8 SOT23-6
    Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) 100V TA = 25°C 0.25Ω • Low on-resistance •


    Original     		PDF ZXMN10A08E6 AEC-Q101 OT23-6 DS31909 ZXMN10A08E6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC marking 10A8 10A8 SOT23-6

    10A8 SOT23-6

    Abstract: 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.4 ID = 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC 10A8 SOT23-6 10A8 ZXMN10A08E6 ZXMN10A08E6TA

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits N EW PRODU CT Product Summary V BR DSS 100V Max RDS(on) • • • • • Max ID TA = 25°C (Note 5) 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V


    Original     		PDF ZXMN10A08E6 AEC-Q101 DS31909

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    AEC-Q101

    Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
    Text: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC


    Original     		PDF AEC-Q100/AEC-Q101 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q AEC-Q101 AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA

    10A8 SOT23-6

    Abstract: ZXMN10A08E6
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC 10A8 SOT23-6 ZXMN10A08E6

    10A8

    Abstract: ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
    Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN10A08E6 OT23-6 OT23-6 ZXMN10A08E6TA ZXMN10A08E6TC00 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC