Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer R07DS0358EJ0600 Rev.6.00 May 19, 2011 Features • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. MPAK Package is suitable for high density surface mounting and high speed assembly.
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R07DS0358EJ0600
PLSP0003ZC-A
000pcs
R07DS0358EJ0600
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A2 zener diode
Abstract: zener diode 2.7 b2 zener diode A3 zener diode B3 A2 9 zener diode zener diode B2 Zener Diode C3 4 Zener Diode B1 9 Zener Diode C3 5 5.6 B1 zener diode
Text: HZ xx Series VOLTAGE 1.6 ~ 38 V, 500 mW Silicon Planar Zener Diode for Stabilized Power Supply Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DO-35 FEATURES Ø 2.0 56.2 z Low leakage, low zener impedance and
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DO-35
HZ36-3.
01-June-2003
A2 zener diode
zener diode 2.7 b2
zener diode A3
zener diode B3
A2 9 zener diode
zener diode B2
Zener Diode C3 4
Zener Diode B1 9
Zener Diode C3 5
5.6 B1 zener diode
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zener diode rd20e b2
Abstract: diode zener 1N 398 zener diode B3 Zener Diode B1 9 zener diode rd13e zener diode B5 RD6.2E zener diode rd39e b5 RD6.8E NEC Zener diode RD3.0E
Text: DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE DO-35 NEC Type RD2.0E to RD200E Series are planar type zener diode in the PACKAGE DIMENSIONS (in millimeters) popular DO-35 package with DHD (Double Heatsink Diode) construction φ 0.5 25 MIN.
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RD200E
DO-35)
RD200E
DO-35
RD130E
RD200E:
RD39E
zener diode rd20e b2
diode zener 1N 398
zener diode B3
Zener Diode B1 9
zener diode rd13e
zener diode B5
RD6.2E
zener diode rd39e b5
RD6.8E
NEC Zener diode RD3.0E
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Untitled
Abstract: No abstract text available
Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD2NM60 STD2NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STD2NM60
STD2NM60-1
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STD2NM60
Abstract: STD2NM60-1
Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STD2NM60 STD2NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STD2NM60
STD2NM60-1
STD2NM60
STD2NM60-1
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Untitled
Abstract: No abstract text available
Text: STD3NM60 STD3NM60-1 N-CHANNEL 600V - 1.4Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD3NM60 600V < 1.6 Ω 3A TYPICAL RDS(on) = 1.4 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STD3NM60
STD3NM60-1
O-252
O-251
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1NK60
Abstract: 1nk60zr 1nk60z STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP D1LNK60Z i-pak Package zener diode 0025W st 1NK60zr
Text: STQ1NK60ZR STD1LNK60Z-1 N-CHANNEL 600V - 13Ω - 0.8A TO-92/IPAK Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS on ID PW STQ1NK60ZR STD1LNK60Z-1 600 V 600 V < 15 Ω < 15 Ω 0.3 A 0.8 A 3W 25 W TYPICAL RDS(on) = 13Ω EXTREMELY HIGH dv/dt CAPABILITY
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STQ1NK60ZR
STD1LNK60Z-1
O-92/IPAK
1NK60
1nk60zr
1nk60z
STD1LNK60Z-1
STQ1NK60ZR
STQ1NK60ZR-AP
D1LNK60Z
i-pak Package zener diode
0025W
st 1NK60zr
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STD2NM60
Abstract: STD2NM60-1
Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STD2NM60
STD2NM60-1
STD2NM60
STD2NM60-1
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1nk60z
Abstract: STD1LNK60Z STD1LNK60Z-1 STQ1NK60ZR STQ1NK60ZR-AP 1nk60zr
Text: STQ1NK60ZR STD1LNK60Z-1 N-CHANNEL 600V - 13Ω - 0.8A TO-92/IPAK Zener-Protected SuperMESH MOSFET TYPE VDSS RDS on ID PW STQ1NK60ZR STD1LNK60Z-1 600 V 600 V < 15 Ω < 15 Ω 0.3 A 0.8 A 3W 25 W TYPICAL RDS(on) = 13Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY
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STQ1NK60ZR
STD1LNK60Z-1
O-92/IPAK
1nk60z
STD1LNK60Z
STD1LNK60Z-1
STQ1NK60ZR
STQ1NK60ZR-AP
1nk60zr
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STD9NM60
Abstract: STD9NM60-1 STD9NM60T4 STP9NM60
Text: STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STP9NM60 STD9NM60 STD9NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω
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STP9NM60
STD9NM60
STD9NM60-1
O-220/DPAK/IPAK
STD9NM60
O-220
STD9NM60-1
STD9NM60T4
STP9NM60
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STD1LNK60Z-1
Abstract: STN1NK60Z STQ1NK60ZR STQ1NK60ZR-AP
Text: STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600 V 600 V 600 V < 15 Ω < 15 Ω < 15 Ω
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STD1LNK60Z-1
STQ1NK60ZR
STN1NK60Z
O-92/IPAK/SOT-223
STQ1NK60ZR
STD1LNK60Z-1
STN1NK60Z
STQ1NK60ZR-AP
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B2 Zener
Abstract: A2 9 zener diode zener mark code C1 zener diode B3 Hitachi DSA00776 zener diode c2 HZ16L a3 6 zener zener diode A3 zener diodes color coded
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev 1 November 1996 Features • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
SC-48
B2 Zener
A2 9 zener diode
zener mark code C1
zener diode B3
Hitachi DSA00776
zener diode c2
HZ16L
a3 6 zener
zener diode A3
zener diodes color coded
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P4NM60
Abstract: MOROCCO P4NM60 D3NM60 STD3NM60 STD3NM60-1 STD3NM60T4 STP4NM60 D3nm6
Text: STP4NM60 STD3NM60 - STD3NM60-1 N-CHANNEL 600V - 1.3Ω - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE STP4NM60 STD3NM60 STD3NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 1.5 Ω < 1.5 Ω < 1.5 Ω 4A 3A 3A 69 W 42 W
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STP4NM60
STD3NM60
STD3NM60-1
O-220/DPAK/IPAK
STD3NM60
O-220
P4NM60
MOROCCO P4NM60
D3NM60
STD3NM60-1
STD3NM60T4
STP4NM60
D3nm6
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6.3 B1 zener diode
Abstract: zener diode B3 B1 6 zener diode ZENER A2 6 HZS7L diode Hitachi DSA002786 a3 7 zener 9.1 b3
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-121A
6.3 B1 zener diode
zener diode B3
B1 6 zener
diode ZENER A2 6
HZS7L diode
Hitachi DSA002786
a3 7 zener
9.1 b3
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Untitled
Abstract: No abstract text available
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev 1 Features • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
HZ36-2L
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zener diode B3
Abstract: diode zener ZL 15 zener diode t5 zener diode data manual DEI-602 lm 338 zener RD zener diode zener diode numbering system d1472 t5 zener
Text: User’s Manual Precautions Regarding Use of NNCD Series and RD Series Document No. D14724EJ3V0UM00 3rd edition Date Published September 2000 N CP(K) Printed in Japan 2000 [MEMO] 2 User’s Manual D14724EJ3V0UM00 • The information in this document is current as of August, 2000. The information is subject to
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D14724EJ3V0UM00
fo88-6130
zener diode B3
diode zener ZL 15
zener diode t5
zener diode data manual
DEI-602
lm 338 zener
RD zener diode
zener diode numbering system
d1472
t5 zener
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CIE1931
Abstract: No abstract text available
Text: Technical Data Sheet 6324/T2C9-1HLA Features ․4.8mm round package. ․High luminous power. ․Typical chromaticity coordinates x=0.29, y=0.28 according to CIE1931. ․Bulk, available taped on reel. ․ESD-withstand voltage: up to 4KV ․The product itself will remain within RoHS compliant version.
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6324/T2C9-1HLA
CIE1931.
NumberDLE-0000739
CIE1931
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RD2.0F
Abstract: nec 3904 SC-1007A B1 6 zener RD20F NEC B 617 Zener Diode B1 9 RD10F RD13F RD15F
Text: DATA SHEET ZENER DIODES RD2.0F to RD82F ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE DESCRIPTION PACKAGE DIMENSIONS NEC type RD∗∗F Series are DHD Double Heatsink Diode (Unit: mm) Construction planar type zener diodes possessing an allowable power dissipation of 1 watt.
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RD82F
DO-41
RD2.0F
nec 3904
SC-1007A
B1 6 zener
RD20F
NEC B 617
Zener Diode B1 9
RD10F
RD13F
RD15F
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RD15M
Abstract: D47M RD5.1M-B1 RD10M RD11M RD12M RD13M RD16M RD18M RD20M
Text: ZENER DIODES R D 2 . 0 M —R D 4 7 M 200 mW MINI MOLD ZENER DIODE P ACKAG E DIMENSIONS DESCRIPTION Type RD2.0M to RD47M Series are planar type zener diodes pro cessing an allowable power dissipation of 200 mW. in m illim e te rs 0 .6 5 : 8; U FEA TU RES
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OCR Scan
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RD47M
RD47M
RD18M
RD20M
RD22M
RD24M
RD27M
RD30M
RD33M
RD15M
D47M
RD5.1M-B1
RD10M
RD11M
RD12M
RD13M
RD16M
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zener diode A3
Abstract: C2 3 zener diode HITACHI HZS-L rd 9.1 b2 HZS6L zener Diode B2 diode Lz 99
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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OCR Scan
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ADE-208-121A
-55Test
HZS36-3L
zener diode A3
C2 3 zener diode
HITACHI HZS-L
rd 9.1 b2
HZS6L
zener Diode B2
diode Lz 99
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diode 9.1 b3
Abstract: diode Lz 99 zener diode A3 hz6a-2l 5.6 B1 zener diode HZ6L A2 zener diode HITACHI HZ-L ADE-208-118A HZ7L
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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OCR Scan
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ADE-208-118A
DO-35
HZ36-3L
diode 9.1 b3
diode Lz 99
zener diode A3
hz6a-2l
5.6 B1 zener diode
HZ6L
A2 zener diode
HITACHI HZ-L
HZ7L
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A2 zener diode
Abstract: 5.6 B1 zener diode 9.1 b2 diode rd 9.1 b2 52Y Diode
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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OCR Scan
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ADE-208-118A
DO-35
HZ24L
HZ27L
HZ30L
HZ33L
HZ36L
HZ36-3L
A2 zener diode
5.6 B1 zener diode
9.1 b2 diode
rd 9.1 b2
52Y Diode
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diode HZ27L-3
Abstract: hz11l
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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OCR Scan
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ADE-208-118A
DO-35
HZ20L
HZ22L
HZ24L
HZ27L
HZ30L
HZ33L
HZ36L
HZ36-3L
diode HZ27L-3
hz11l
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9.1 b2 diode
Abstract: diode Lz 99
Text: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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OCR Scan
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ADE-208-121A
11-----------r
HZS20L
HZS22L
HZS24L
HZS27L
HZS30L
HZS33L
HZS36L
HZS36-3L
9.1 b2 diode
diode Lz 99
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