PZ5252
Abstract: No abstract text available
Text: ZENER DIO DES ,3 S O T -2 3 /T O -2 3 6 A B 2' ‘TMPZ’ ZENER DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C Zener Voltage Min. Norn. Max. Leakage Current Zener Im pedance @VR Max. Z z t "rr @ 'Z T Max Type Marking V (V) (V) (mA) (^A) (V) (Si) (mA)
|
OCR Scan
|
PZ5229
PZ5230
P25231
PZ5234
PZ5235
PZ5238
PZ5239
PZ5241
PZ5247
PZ5248
PZ5252
|
PDF
|
4552b
Abstract: 1N33
Text: 1N3305 thru 1N3350B and Microsemi Corp. ,h' SANTA ANA, CA SCOTTSDALE, A Z / F o r m o r e i n f o r m a ti o n c a ll: / 1 N 4 5 4 9 B thru -N 4 5 5 6 B • 602 94I-6300 FEATURES SILICON 50 WATT ZENER DIODES • ZENER VOLTAGE 3.9 TO 200V . LOW ZENER IMPEDANCE
|
OCR Scan
|
1N3305
1N3350B
94I-6300
4552b
1N33
|
PDF
|
CI 4583
Abstract: CI 4584 zener diode 1N ci 4565 zener diode 1N 48 BZV43 DIODe ZENER 1n 4570 1N827 1n zener
Text: temperature compensated zener diode diodes zener compensées en température V CT* typ V Types 250 mW / Tamb =50°C BZV43 C B Z V 44 C B ZV 45 C Tam b / 1N 3 49 6 1 N 3 49 7 1N 3498 1N 3499 1 N 35 00 = •ZT C i) 1mA) 20 5 Test temperatures Températures de mesure
|
OCR Scan
|
BZV43
------DO-35
CB-102)
1N3498
1N827
1N821
CB-261
CI 4583
CI 4584
zener diode 1N
ci 4565
zener diode 1N 48
DIODe ZENER 1n
4570
1n zener
|
PDF
|
MBRL120
Abstract: MBRL140 motorola 239 zener MLL34
Text: ; 6 3 6 7 2 5 5 . M OTOROLA SC <OIODES/OPTO LEADLESS ZENERS continued) MLL34 — 500 mW (continued) 98D 78637 ^ D D€~| b 3 t .? a S S T-//~// DD7at,37 7 | ~ (Vp = 1.5 V Max @ 200 mA for all types) Maximum Maximum Zener Impedance DC Zener Current ÌZM Z Z T@ *Z T
|
OCR Scan
|
MLL34
MLL4370A
MLL4371A
MLL4372A
MLL746A
MLL747A
MLL748A
MLL749A
MLL750A
MLL751A
MBRL120
MBRL140
motorola 239 zener
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SbE » • 7 ^ 5 3 7 ÜDM1SS1 023 ■ r z 7 SCS-THOMSON ^ 7# SGTH T -lì- M MffiaglBILBlBÎBWIlBi 1N 5221 B -» 1N 5281 B S 6 S-THOMSON ZENER DIODES ■ LARGE VOLTAGE RANGE : 2.4V TO 200V ■ DOUBLE SLUG TYPE CONSTRUCTION D E S C R IP T IO N 500mW hermetically sealed glass silicon Zener
|
OCR Scan
|
500mW
|
PDF
|
GP 836 DIODE
Abstract: 3fv 60 HP 3379 KDZ9.1FV ZENER QF KDZ10FV KDZ20FV KDZ16VV KDZ3.6FV kdz16fv
Text: SEMICONDUCTOR KDZ3.6FV~KDZ36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : TFSC C 6%. D Nominal Voltage Tolerance About B DIM A B C
|
Original
|
KDZ36FV
KDZ36VV
KDZ33VV
KDZ30VV
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
KDZ27VV
20x20mm
GP 836 DIODE
3fv 60
HP 3379
KDZ9.1FV
ZENER QF
KDZ10FV
KDZ20FV
KDZ16VV
KDZ3.6FV
kdz16fv
|
PDF
|
Z15 marking diode
Abstract: SMFZ18V diode Z27 SMFZ24V SMFZ15V z12 diode diode zener Z11 SMFZ16V zener 8v diode z33 marking
Text: SEMICONDUCTOR SMFZ4.3V-36V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. E 2 FEATURES 6%. A B Nominal Voltage Tolerance About E Small Power Mold Type : SMF MAXIMUM RATING Ta=25
|
Original
|
V-36V
SMFZ13V
SMFZ15V
SMFZ16V
SMFZ18V
SMFZ20V
SMFZ22V
SMFZ24V
SMFZ27V
SMFZ30V
Z15 marking diode
SMFZ18V
diode Z27
SMFZ24V
SMFZ15V
z12 diode
diode zener Z11
SMFZ16V
zener 8v diode
z33 marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FU JITSU MAGNETIC DISK HEAD AMPLIFIER MB 4117-4 MB 4117-6 MB 4118-4 MB 4118-6 March 1987 E d itio n 2.0 MAGNETIC DISK HEAD AMPLIFIER The Fujitsu M B 4 1 1 7 -4 and M B 4 11 8 -4 are magnetic disk head am plifiers w ith Zener-zapped w rite current sourse fo r 4-channel head, MB 4117-6 and
|
OCR Scan
|
4117-4/M
FPT-24C
mode09
4117-6/MB
FPT-28C-A01
28-LEAD
FPT-28C-A01)
F28009S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDZ2.0V~36V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. L A H 6%. F Nominal Voltage Tolerance About 1 E Small Package : USC K CATHODE MARK FEATURES G B 2 J
|
Original
|
KDZ33V
KDZ18V
KDZ20V
KDZ22V
KDZ24V
20x20mm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDZ2.0V~33V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. L A H 6%. F Nominal Voltage Tolerance About 1 E Small Package : USC K CATHODE MARK FEATURES G B 2 J
|
Original
|
KDZ18V
KDZ20V
KDZ22V
KDZ24V
KDZ27V
20x20mm
|
PDF
|
36V zener
Abstract: KDZ10V KDZ11V KDZ12V KDZ13V KDZ15V KDZ16V KDZ18V KDZ20V KDZ22V
Text: SEMICONDUCTOR KDZ2.0V~36V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. L A H 6%. F Nominal Voltage Tolerance About 1 E Small Package : USC K CATHODE MARK FEATURES G B 2 J
|
Original
|
KDZ33V
KDZ18V
KDZ20V
KDZ22V
KDZ24V
20x20mm
36V zener
KDZ10V
KDZ11V
KDZ12V
KDZ13V
KDZ15V
KDZ16V
KDZ18V
KDZ20V
KDZ22V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Drivers for Motors with Reversible Brushes B A 6 219 BA6219 provides reverse, The stop output output current idling , voltage and can be up to 2. 2A. braking) set by There which an are external are four selected zener by output the modes input (normal, logic
|
OCR Scan
|
BA6219
DA6219
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 6 3 6 7 2 5 5 M O T O R O L A SC D I O D E S / O P T O Tt »F|b3b7ESS _ r n - n _ 1N935,A,B MOTOROLA thru S E M IC O N D U C T O R TECHNICAL DATA i - □ 0 7 7 cn 7 1N939,A,B s | l) a ( a S h e e t 5; i TEMPERATURECOMPENSATED SILICON ZENER
|
OCR Scan
|
1N935
1N939
|
PDF
|
ADC700 equivalent
Abstract: SHC76
Text: B UR R- BR OUN CORP SSE D • l?313bS GDlbfi“^ 1 ■ r - s ! -1 0 -1 6 B U R R -B R O W N 1 M M ADC700 I 16-Bit Resolution With Microprocessor Interface A/D CONVERTER The reference circuit, containing a buried zener, is laser-trimmed for minimum temperature coefficient.
|
OCR Scan
|
313bS
ADC700
16-Bit
17jas
28-Pin
ADC700
ADC700 equivalent
SHC76
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Z2 SMB 1 . Z2 SMB 200 2W 7 B + 6 > Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes > 6 74 B + &% C ' < > 6 E4 F E7 Features
|
Original
|
|
PDF
|
MZ15A
Abstract: MZ27A MZ4A 1N724 501D 1I75 MZ12A mz 39 diodes de regulation de tension 1N715A
Text: DIODES DE RÉGULATION DE TENSION zener diodes TYPES In A l 250 mW / MZ 4 A MZ 5 A MZ 6 A MZ 8 A MZ 10 A MZ 12 A MZ 15 A MZ 18 A MZ 22 A MZ 27 A MZ 33 A MZ 39 A M Z 47 A MZ 56 A MZ 68 A MZ 82 A MZ 10 B MZ 12 B MZ 15 B MZ 18 B 2 5 0 mW 1N 1N 1N 1N 1N 1N 1N 1N
|
OCR Scan
|
10-Vte)
MZ15A
MZ27A
MZ4A
1N724
501D
1I75
MZ12A
mz 39
diodes de regulation de tension
1N715A
|
PDF
|
H-22
Abstract: No abstract text available
Text: Z3 SMC 1 . Z3 SMC 200 3W 7 B + 6 > Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes > 6 73 B + &% C ' < > 6 E3 F E7 Features
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Z2 SMB 1 . Z2 SMB 200 2W 7 B + 6 > Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes > 6 74 B + &% C ' < > 6 E4 F E7 Features
|
Original
|
|
PDF
|
BZX 110
Abstract: BZX-B5 20823 zx85
Text: ZENER DIODES Z w w r O io d M with Pv - 1 , 3 W Typ* Electrical characteristic« for VZ7' a nd ^2 nom lZJ V mA 2.7 80 B Z X 85/C 3 V 0 3.0 80 2.B.3.2 B Z X 85/C 3 V 3 3.3 70 3 1 3 5 B Z X 85/C 2 V 7 rz)T V 2.5.2.9 at û ¡ZK /R a * mA mA V 1 VK -0 0 6 .-0 0 5
|
OCR Scan
|
|
PDF
|
25C31I
Abstract: 3004kw HZS5.6E 30B2 HZS10E HZS11E HZS12E HZS13E HZS16E HZS20E
Text: MHD— — K SMALL SIZED ZENER DIODES HZS-E SERIES-S I L I C O N E P I T A X IA L P L A N A R T y p e N o . B r ig h t B lu e S T A B IL IZ E D POW ER S U P P LY 26.0 m in . 2 6 .0 m in. C ath o d e B an d ( B r ig h t B lu e ) 1. "h V — K I C a t h o d e
|
OCR Scan
|
HZS24E
HZS27E
HZS30E
HZS33E
HZS39E
25C31I
3004kw
HZS5.6E
30B2
HZS10E
HZS11E
HZS12E
HZS13E
HZS16E
HZS20E
|
PDF
|
TRANSISTOR D405
Abstract: No abstract text available
Text: 2SD2170 2SC4574 Transistors Medium Power Transistor Motor or Relay drive I 2SD 2170 •A b s o lu te maximum ratings (Ta=25"C ) •F e a tu re s 1 2 3 4 5 6 ) ) ) ) ) ) Built-in zener diode between collector and base. Z ener diode has low dispersion. Strong protection against reverse pow er surges due to low loads.
|
OCR Scan
|
2SD2170
2SC4574
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
TRANSISTOR D405
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 114 Surface M ount Devices Zener Diodes, SOT-223 1.3W , Pinout W (cont.) VZ <V) at 'ztest=5 mA Type BZV90C 22 B ZV90C 24 min. max. typ. 2 3 .3 2 5 .6 20 25 2 0 .8 2 2 .8 t 'Ztest- 2 BZV90C 27 25.1 BZV90C30 2 8 .0 3 1 .0 3 4 .0 BZV90C33 BZV90C36 BZV90C39
|
OCR Scan
|
OT-223
BZV90C
ZV90C
BZV90C30
BZV90C33
BZV90C36
BZV90C39
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1989963 CENTRAL SEMICONDUCTOR D 0 Baef0 B ^ETrôCG®GadI®SÊ F Ê @ E ~ P nflT1b3 61C 00274 T-V/W/ H T 1IÏM 337 OA THRU 1N4372A D000274 SILICON ZENER DIODE 500mW, 2.4 THRU 3-0 VOLTS gdiBaioeG^oig-lBfleii’©^ e©E?p„ Central £@Bl?i!e©mgflUGt!Or C © 6 ’p.
|
OCR Scan
|
D000274
1N4372A
500mW,
DO-35
1N4370A
CBR10
CBR25Ser/es
CBR12
CBR30
0000SE3
|
PDF
|
MIL-STD-1399
Abstract: 60KS200C 90KS200C
Text: 60KS200C and 90KS200C B ID IR E C T IO N A L T R A N SIE N T VOLTAGE SUPPRESSO RS Microsemi Corp. The d'O äe experts SANTA ANA, CA SCOTTSDALE . /4Z P'or m o re in fo rm a tio n call: 602 9 4 1 -6 3 0 0 FEA TU RES TRANSIENT ABSORPTION ZENER • 200 VOLT BIDIRECTIONAL
|
OCR Scan
|
60KS200C
90KS200C
MIL-STD-1399
MIL-S-19500
MIL-E-16400.
MIL-STD-1399,
300A1he
|
PDF
|