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Lenovo 30E000YSUS THINKSTATION P620AMD RYZEN PRO
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Sugatsune Kogyo Co Ltd 100-P4A/32-3WAY-SUS304 MOUNTING PLATE, STAINLESS STEE
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YSUS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SM5301BS Abstract: SM5301B Text: SM5301BS フィルタスルー機能付き広帯域フィルタ内蔵 3ch 出力ビデオバッファ •概要 SM5301BS は出力バッファ機能を持つビデオフィルタで、VESA 標準 ATSC ディジタル TV に対応できます。フィルタは 5 次バターワースローパスフィルタ構成となっています。このフィルタの特性は、最小オー	Original	SM5301BS SM5301BS 37MHz SM5301B NC0208B SM5301B	PDF
Untitled Abstract: No abstract text available Text: SM5301BS 3-channel Video Buffer with Built-in Wideband Filters with Filter Through Function OVERVIEW The SM5301BS is a video filter LSI with buffered outputs for VESA-standard ATSC digital TV. The filter employs a 5-order Butterworth lowpass filter configuration. The filter characteristics have been optimized for	Original	SM5301BS SM5301BS Tokyoi104-0032 iC81-3-5541-6501 iC81-3-5541-6510 NC0208BE	PDF
SM5301BS Abstract: ysus SM5301B plasma tv ic BINA Capacitor 47 VFc IPD filter Text: SM5301BS 3-channel Video Buffer with Built-in Wideband Filters with Filter Through Function OVERVIEW The SM5301BS is a video filter LSI with buffered outputs for VESA-standard ATSC digital TV. The filter employs a 5-order Butterworth lowpass filter configuration. The filter characteristics have been optimized for	Original	SM5301BS SM5301BS NC0208AE ysus SM5301B plasma tv ic BINA Capacitor 47 VFc IPD filter	PDF
GT45F122 Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124	PDF
soz k11 Abstract: ysus 29c117 32 bit barrel shifter circuit diagram using mux 118 068 Text: NOV 2 1 m t* Am29C117 16-Bit CMOS Microprocessor > 3 D IS T IN C T IV E C H A R A C T E R IS T IC S • • • • High-Speed M icroprocessor - A m 2 9C 1 17-2 supports up to 65 ns m icrocycle tim es. Very Low Power O ptim ized fo r H igh-Perform ance C ontrollers	OCR Scan	Am29Cl17 16-Bit Am29C117-2 Am29C116 Am29C117 68-Lead soz k11 ysus 29c117 32 bit barrel shifter circuit diagram using mux 118 068	PDF
SM5301BS Abstract: plasma tv ic SM5301B atsc hsync vsync Text: SM5301BS 3-channel Video Buffer with Built-in Wideband Filters with Filter Through Function OVERVIEW The SM5301BS is a video filter LSI with buffered outputs for VESA-standard ATSC digital TV. The filter employs a 5-order Butterworth lowpass filter configuration. The filter characteristics have been optimized for	Original	SM5301BS SM5301BS NC0208BE plasma tv ic SM5301B atsc hsync vsync	PDF
CI sj 4558 Abstract: IC sj 4558 h3 0925 CU sj 4558 0925 h3 ysus data sheet ic 4558 San Ace 40 yg 4558 test bench for 16 bit shifter Text: NOV 2 1 m t* Am29C117 16-Bit CMOS Microprocessor > 3 DISTINCTIVE CHARACTERISTICS • • • • High-Speed M icroprocessor - A m 2 9C 1 17-2 supports up to 65 ns m icrocycle tim es. Very Low Power O ptim ized fo r H igh-Perform ance C ontrollers - T h e a rchite cture is optim ized fo r co ntro lle rs providing	OCR Scan	Am29Cl17 16-Bit Am29C117-2 Am29C116 Am29C117 68-Lead CI sj 4558 IC sj 4558 h3 0925 CU sj 4558 0925 h3 ysus data sheet ic 4558 San Ace 40 yg 4558 test bench for 16 bit shifter	PDF
GT30F121 Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101 Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications	Original	BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101	PDF
GT30J124 Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125 Text: 製品カタログ 2010-3 東芝半導体製品カタログディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。	Original	BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125	PDF