YG805C Search Results

Contextual Info: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

Contextual Info: DAT E CHECKED Jun.-18-‘03 Jun.-18-‘03 Device Name ： Type Name ： YG805C10R Spec. No. ： MS5D1816 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any

Contextual Info: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

UTI03

Abstract: P151 T460 YG805C04 IlI15
Contextual Info: YG805C04 2 oa * Outline Drawings S C H O T T K Y B A R R IER DIODE Features Insulated package by fully molding. • I& V f Low V f • Z4 t - Connection Diagram Super high speed switching. • -fu-i—ftmtusAnmit High reliability by planer design. I Applications

YG805C04

Abstract: SCHOTTKY 20A 40V YG805C04R
Contextual Info: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

YG805C06R

Contextual Info: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

SCHOTTKY 20A 40V

Abstract: a465
Contextual Info: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

YG805C10

Abstract: "Dual Schottky Rectifier"
Contextual Info: BL GALAXY ELECTRICAL YG805C10 VOLTAGE RANGE: 100 V CURRENT: 20 A DUAL SCHOTTKY RECTIFIER FEATURES High surge capacity. TO-220AB For use in low voltage, high frequency inverters, free 111 wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction.

diode F4 3J

Contextual Info: YG805C04 2 oa X 3 7 h + — ' < x) T ¥ * O u tlin e D ra w in g s K S C H O T T K Y B A R R IER DIODE I Features Insulated package by fully molding. • te V F Low V f WE • T A v + 's V T M - C o n n e ctio n D iagram Super high speed switching. • -f u - i —

Contextual Info: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

YG805C10

Contextual Info: YG805C010R 100V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 Low VF Super high speed switching. High reliability by planer design. 3 1.2±0.2 13Min 3.7±0.2 Features 2 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2

YG805C04

Abstract: 18Oi
Contextual Info: YG805C04 20A H Outline Drawing scHOTTKY b a r r i e r d io d e • Connection Diagram ■ Features • Insulated package by fully molding • Lo w V f • Super high speed switching r > h H « -| • High reliability by planer design !> i) ■ Applications

yg805c06

Abstract: YG805C06R IO120
Contextual Info: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2

YG805C04

Abstract: k2030
Contextual Info: YG805C04 2oa X 3 7 h + — ' < x) T ¥ * Outline Drawings K S C H O T T K Y B A R R IER DIODE I Features Insulated package by fully molding. • te V F Low V f • WE TAv+'sVTM- Connection Diagram Super high speed switching. • -f u - i— High reliability by planer design.

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

A485

Contextual Info: YG8O5CO4 20 a *>3'y h + —/< X Ì 7 ¥ ^ —K • Outline Drawings SCHOTTKY BARRIER DIODE ■Ml Features Insulated package by fully m o ld in g . • te V F Low V f ¡TOE • X 'fy T 's if'Z t- Connection Diagram Super high speed sw itchin g. • T V -* -ftfffC J S A f ilit t

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

ESAB82-004

Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Contextual Info: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)

IR2116

Abstract: TLP521 8 D3SBA60 equivalent 120K100
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET ASSP DS04-27223-1E For Power Supply Applications Multi-Resonance AC/DC Converter IC MB3873 • DESCRIPTION The MB3873 is a pulse frequency modulation PFM type multi-resonance AC/DC converter IC providing soft switching functions in a more compact, higher-efficiency, low-noise package.

IR2116

Abstract: tlp521 equivalent YG805C04 D3SBA60 ECQU2A224MV FPT-16P-M06 HA17431P MB3873 TLP521-1 2SC3233
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET ASSP DS04-27223-1E For Power Supply Applications Multi-Resonance AC/DC Converter IC MB3873 • DESCRIPTION The MB3873 is a pulse frequency modulation PFM type multi-resonance AC/DC converter IC providing soft switching functions in a more compact, higher-efficiency, low-noise package.

yg805c

Contextual Info: This ma «rial and the information herein ts the property of Fuji Elecinc Co.Ltd. They shall be neither reproduced, copiée leni, or disclosed in any way w hatsoever for the use of a ny third pany.nor used for the manufacturing purposes w ithout the express writ ion consent of Fuji Electric Co. Ltd.

D3SBA60 equivalent

Abstract: IR2116 D3SBA60 tlp521 equivalent 2SC3233 YG805C04 2SK2543 ECQU2A224MV FPT-16P-M06 HA17431P
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET ASSP DS04-27223-2E For Power Supply Applications Multi-Resonance AC/DC Converter IC MB3873 • DESCRIPTION The MB3873 is a pulse frequency modulation PFM type multi-resonance AC/DC converter IC providing soft switching functions in a more compact, higher-efficiency, low-noise package.

ET412

Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Contextual Info: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646