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Vishay Intertechnologies M55342K11B2Y21TWLT Resistor Chip Thick Film 0402 2.21kOhm ?0.5% 1/20W ?100ppm/?C - Waffle Pack (Alt: M55342K11B2Y21TWLT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M55342K11B2Y21TWLT	Waffle Pack		16 Weeks	25	1 - 10 - 100 $46.1602 1000 $34.606 10000 $34.606	Buy Now
Vishay Intertechnologies M55342K06B2Y21TWAT Resistor Chip Thick Film 0805 2.21kOhm ?0.5% 3/20W ?100ppm/?C - Waffle Pack (Alt: M55342K06B2Y21TWAT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M55342K06B2Y21TWAT	Waffle Pack		16 Weeks	25	1 - 10 - 100 $39.5744 1000 $24.7247 10000 $24.7247	Buy Now
Vishay Intertechnologies M55342K12B2Y21TWLT Resistor Chip Thick Film 0603 2.21kOhm ?0.5% 1/10W ?100ppm/?C - Waffle Pack (Alt: M55342K12B2Y21TWLT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M55342K12B2Y21TWLT	Waffle Pack		16 Weeks	25	1 - 10 - 100 $42.2117 1000 $31.6459 10000 $31.6459	Buy Now
Vishay Intertechnologies D55342M07B2Y21TULT Resistor Thick Film 1206 2.21kOhm ?0.5% 1/20W ?300ppm/?C - Custom Tape W/Leader (Alt: D55342M07B2Y21TULT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	D55342M07B2Y21TULT	Tape w/Leader		16 Weeks	100	1 - 10 - 100 $29.6556 1000 $9.4094 10000 $9.4094	Buy Now
Vishay Intertechnologies M55342K13B1Y21TULT Resistor Chip Thick Film 0302 1.21kOhm ?0.5% 1/25W ?100ppm/?C - Custom Tape W/Leader (Alt: M55342K13B1Y21TULT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M55342K13B1Y21TULT	Tape w/Leader		16 Weeks	100	1 - 10 - 100 $29.2188 1000 $16.0732 10000 $16.0732	Buy Now

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Y21T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mosfet p321 Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS	Original	AN215A/D AN215A mosfet p321 motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t	PDF
sd 4093 Abstract: HF 4093 N 4220 2N4119 4446 transistor ESM 30 2N 4117 4392 2N4118 2N4416 Text: o n channel field effect transistors — metal case transistors à effet de cham p-canal n — boîtier métal Type 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 2N 4117 2N 4117 A 2N4118 2N 4118 A 2N4119 2N 4119 A 2N 2N 2N 2N 2N 2N 4220 4220 A 4221 4221 A 4222 4222 A	OCR Scan	2N4118 2N4119 2N5433 sd 4093 HF 4093 N 4220 4446 transistor ESM 30 2N 4117 4392 2N4416	PDF
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor	PDF
AN215A Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation	Original	AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing	PDF
mosfet p321 Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation	Original	AN215A/D AN215A mosfet p321 Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A	PDF