XN4506 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

2SD1915F

Abstract: 2SD1915 XN04506 XN4506
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Contextual Info: Composite Transistors XN04506 XN4506 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10

2SD1915F

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des

2SD1915

Abstract: vebo 25 XN4506 2sd1915F
Contextual Info: Composite Transistors XN4506 NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 +0.1 +0.1 0 to 0.05 0.4±0.2 • Absolute Maximum Ratings Parameter Ta=25˚C Symbol Ratings Unit Collector to base voltage

2SD1915

Abstract: 2sd1915F XN04506 XN4506
Contextual Info: Composite Transistors XN04506 XN4506 NPN epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SD1915F x 2 elements 0 to 0.1 ● (Ta=25˚C)

2sd1915F

Abstract: 2SD1915 ZXTN19020DZ XN04506 XN4506
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05 5 2 1 (0.65) 3

2SD1915

Abstract: 2SD1915F XN04506 XN4506
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05 5 2 1 (0.65) 3

2SD1915F

Abstract: 2SD1915 ZXTN19020DZ XN04506 XN4506
Contextual Info: Composite Transistors XN04506 XN4506 NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 +0.1 +0.1 0 to 0.05 0.4±0.2 • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030