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    XN1872 Price and Stock

    VENKEL LTD MELFC0207-XN-1872DT

    MELF Coated Thin Film CR;0207;1W;�10PPM;18.7K;�0.5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. MELFC0207-XN-1872DT Reel 6 Weeks, 3 Days 2,000
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    VENKEL LTD MELFC0207-XN-1872CT

    MELF Coated Thin Film CR;0207;1W;�10PPM;18.7K;�0.25%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. MELFC0207-XN-1872CT Reel 6 Weeks, 3 Days 2,000
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    VENKEL LTD MELFC0207-XN-1872BT

    MELF Coated Thin Film CR;0207;1W;�10PPM;18.7K;�0.1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. MELFC0207-XN-1872BT Reel 6 Weeks, 3 Days 2,000
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    VENKEL LTD MELFC0207-XN-1872FT

    MELF Coated Thin Film CR;0207;1W;�10PPM;18.7K;�1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. MELFC0207-XN-1872FT Reel 6 Weeks, 3 Days 2,000
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    XN1872 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    XN1872 Panasonic Silicon n-channel enhancement MOSFET Original PDF
    XN1872 Panasonic Silicon N-channel, Enhancement MOS FET Original PDF
    XN1872 Panasonic N-Channel Enhancement MOS FET Composite Transistors Original PDF
    XN1872 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    XN1872 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK621

    Abstract: XN01872 XN1872 FET23
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10


    Original     		2002/95/EC) XN01872 XN1872) 2SK621 XN01872 XN1872 FET23 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)


    Original     		2002/95/EC) XN01872 XN1872) 2SK0621 2SK621) PDF

    2SK621

    Abstract: XN1872
    Text: Composite Transistors XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK621 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element 0.16 -0.06 +0.1


    Original     		XN1872 2SK621 2SK621 XN1872 PDF

    2SK621

    Abstract: xn7651 pnp and npn Mini Type (D7) 360-200 2SK1103 2SK1842 2SK198 UN2213 XN1871
    Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . . .n Main Characteristics H rrm r1 V ds Application U U Li Neh 2 elements XN1871 Low noise amp. switching n (A) (V) XN1872 * 30 0.02 50 0.1 v,„ Idss (V) (mA)


    OCR Scan     		XN1871 2SK198 XN1872 2SK621 XN1D873/XP1D873 2SK1103 XN1D874/XP1D874 2SK1842 AUN228 AUN230 2SK621 xn7651 pnp and npn Mini Type (D7) 360-200 2SK1103 2SK1842 2SK198 UN2213 XN1871 PDF

    2SK621

    Abstract: XN01872 XN1872 FET MARKING
    Text: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK0621(2SK621) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		XN01872 XN1872) 2SK0621 2SK621) 2SK621 XN01872 XN1872 FET MARKING PDF

    2SK621

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D 15) n Main Characteristics n V ds Application ü * V dsx LJ LI LI U LJ Neh 2 elements (V) *30 50 XN1872 n (A) (V) Basic gm loss (mA) (mS) 0.02 0.5 - 1 2 0.1 - V ds Id (mA)


    OCR Scan     		2SK198 2SK621 XN1871 XN1872 XN1D873/XP1D873 XN1D874/XP1D874 2SK1103 2SK1842 AUN228 AUN230 2SK621 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)


    Original     		2002/95/EC) XN01872 XN1872) 2SK0621 2SK621) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Two elements incorporated into one package (Source-coupled FETs)


    Original     		2002/95/EC) XN01872 XN1872) PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . .n U U Li u u u Neh 2 elements Nch 2 elements Hrrmr1 Application Low noise amp. switching Main Characteristics Vds * Vdsx (V) XN1872 n (V) 0.1 1.5 —3.5 Id


    OCR Scan     		XN1872 XN1D874/XP1D874 2SK198 2SK621 XN1D873/XP1D873 NPNf2SD132R^ SO-10C SO-14CD79) SO-14 PDF

    2SK621

    Abstract: XN01872 XN1872 JIS C 1102
    Text: Composite Transistors XN01872 XN1872 Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs) • Reduction of the mounting area and assembly cost by one half


    Original     		XN01872 XN1872) 2SK621 XN01872 XN1872 JIS C 1102 PDF

    2SK621

    Abstract: XN01872 XN1872
    Text: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Source-coupled FETs) Reduction of the mounting area and assembly cost by one half.


    Original     		XN01872 XN1872) 2SK0621 2SK621) 2SK621 XN01872 XN1872 PDF

    2SK621

    Abstract: XN1872 XN01872
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10


    Original     		2002/95/EC) XN01872 XN1872) 2SK621 XN1872 XN01872 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    d20 diode

    Abstract: 2SJ497
    Text: Transistors Selection Guide by Applications and Functions • FET 5-Pin Mini T y p e (D15) n n M ain C h a ra cteristics n_ n w r "~l U U U Application m V dsx (mA) (V) N -ch 2 elem en ts XN1871 - * 30 20 - 100 1.5 to 3.5 6-Pin S-Mini (D15) Type (D9)


    OCR Scan     		2SK198 2SK621 XN1871 XN1872 2SB970) 2SD1328) d20 diode 2SJ497 PDF

    5pin marking VJ

    Abstract: marking AE 5pin AX05 N2211 9p marking 2SD601 Z 211H
    Text: ^ S 5 S S í / ^ y*T — V Mini Type (5-pin) Package FET Transistors, FETs U n it : mm »•»fri i s-8:8t 0.6510.15 5 - M ( 5 îS i) /N " ^ - v ■>'■Ÿ < "J * T - X 7 ( i , S£#<D$ - m m v t m -E E } v n -S 3 - 4 b 7 > > * 2 4' a (7>a^-ib ft Jfc L t i l


    OCR Scan     		UN2215 2SD601 2SC3130 2SB709A 2SD601A UN2112 UN2212 5pin marking VJ marking AE 5pin AX05 N2211 9p marking Z 211H PDF