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    XL28C Search Results

    XL28C Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    XL28C16A-100 Excel Semiconductor 2K x 8 CMOS EEPROM Memory Scan PDF
    XL28C16A-150 Excel Semiconductor 2K x 8 CMOS EEPROM Memory Scan PDF
    XL28C16A-200 Excel Semiconductor 2K x 8 CMOS EEPROM Memory Scan PDF
    XL28C16A-250 Excel Semiconductor 2K x 8 CMOS EEPROM Memory Scan PDF
    XL28C16B-100 Excel Semiconductor 2K x 8 CMOS EEPROM Memory Scan PDF
    XL28C16B-150 Excel Semiconductor 2K x 8 CMOS EEPROM Memory Scan PDF
    XL28C16B-200 Excel Semiconductor 2K x 8 CMOS EEPROM Memory Scan PDF
    XL28C16B-250 Excel Semiconductor 2K x 8 CMOS EEPROM Memory Scan PDF
    XL28C64-120 Exel 8K x 8 CMOS EEPROM Memory Scan PDF
    XL28C64-150 Exel 8K x 8 CMOS EEPROM Memory Scan PDF
    XL28C64-200 Exel 8K x 8 CMOS EEPROM Memory Scan PDF
    XL28C64-250 Exel 8K x 8 CMOS EEPROM Memory Scan PDF
    XL28C64A Exel 8K x 8 CMOS EEPROM Memory Scan PDF
    XL28C64B-120 Exel 8K x 8 CMOS EEPROM Memory Scan PDF
    XL28C64B-150 Exel 8K x 8 CMOS EEPROM Memory Scan PDF
    XL28C64B-200 Exel 8K x 8 CMOS EEPROM Memory Scan PDF
    XL28C64B-250 Exel 8K x 8 CMOS EEPROM Memory Scan PDF
    XL28C65A Exel 8K x 8 CMOS EEPROM Memory Scan PDF

    XL28C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d0025

    Abstract: No abstract text available
    Text: XL28C64B EXEL Microelectronics, Inc. 8K X 8 CMOS Electrically Erasable PROM 6ms Nonvolatile Write Cycle 1 28 VCC A 12 2 27 WE A7 3 26 NC A7 3 26 NC A6 4 25 A8 A6 4 25 A8 A5 5 24 A9 A5 5 24 A9 A4 6 23 A11 A4 6 23 A11 A3 7 22 OE A3 7 22 OE A2 8 21 A10 A2 8 21


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    PDF XL28C64B 150ns, 200ns 250ns 120ns D0025

    Untitled

    Abstract: No abstract text available
    Text: XL28C16A 1/2 IL08 * C-MOS 2K(2048 x 8)-BIT ELECTRIC ERASABLE PROM - TOP VIEW VDD (+5V) 24 A7 1 A6 2 23 A8 A5 3 22 A9 A4 4 21 WE A3 5 20 OE A2 6 19 A10 A1 7 18 CE A0 8 17 I/O7 I/O0 9 16 I/O6 I/O1 10 15 I/O5 I/O2 11 14 I/O4 12 GND INPUT A0-A10 CE


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    PDF XL28C16A A0-A10 A4-A10 384-BIT

    Untitled

    Abstract: No abstract text available
    Text: MICROELECTRONICS XL28C64B E x txH o n ctin? 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN C O N F IG U R A TIO N S F E A TU R ES • Fast Read A ccess T im es — 120ns, 150ns, 200ns and 250ns ■ Low C M O S P o w er C onsum ption


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    PDF XL28C64B 150pA 120ns, 150ns, 200ns 250ns 120ns 100pF

    Untitled

    Abstract: No abstract text available
    Text: XL28C16A 2K X 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION 24 Pin PDIP Type "P" Package • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns ■ Low CMOS Power Consumption — 30mA active max. — 100jjA standby (max.) A7 Ae Ab A* a3


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    PDF XL28C16A 100ns, 150ns, 200ns, 250ns 100jjA XLE28C16A) 000227b 7A2R014

    non volitile sram

    Abstract: d0027
    Text: XL28C16B Excellence itt F : 2K X 8 C M O S Electrically Erasable PROM PIN CONFIGURATION FEATURES • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns • • 24 pin PDIP Type "P” Package 16 Byte Page Mode Low CMOS Power Consumption — 30mA active max.


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    PDF XL28C16B 100ns, 150ns, 200ns, 250ns 120ns D0027 non volitile sram

    AN2221

    Abstract: 923AT CERDIP-28
    Text: eXeL MICROELECTRONICS B xctlltn c* in XL28C64 £* 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN CONFIGURATIONS FEATURES • Fast Read Access Times — 120ns, 150ns, 200ns and 250ns ■ Low CMOS Power Consumption — 60mA Active — 150|JA (Standby)


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    PDF XL28C64 120ns, 150ns, 200ns 250ns 120ns 10OpF) AN2221 923AT CERDIP-28

    Untitled

    Abstract: No abstract text available
    Text: XL28C64B Preliminary 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN CONFIGURATIONS FEATURES • Fast Read Access Times — 120ns, 150ns, 200ns and 250ns ■ Low CMOS Power Consumption — 60mA Active — 150|xA (Standby) 2B Pin SOIC


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    PDF XL28C64B 120ns, 150ns, 200ns 250ns XLS28C64B XLE28C64B,

    EXEL 636

    Abstract: No abstract text available
    Text: XL28C16A 2K X 8 CM OS Electrically Erasable PROM FEATURES PIN CONFIGURATION 24 Pin PDIP Type ”P" Package • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns Small Outline Type "J“ Package - V-/“ “ A7 [ 1 24 ] A7 [ 1 24 ] Aa [ 2 23 ] ^8


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    PDF XL28C16A 100ns, 150ns, 200ns, 250ns XLE28C16A) XL28C16A EXEL 636

    XLS28C64

    Abstract: No abstract text available
    Text: £XÈL Preliminary XL28C64 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN CONFIGURATIONS FEATURES • Fast Read Access Times — 120ns, 150ns, 200ns and 250ns ■ Low CMOS Power Consumption — 60mA Active — 150|iA (Standby) ■


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    PDF 120ns, 150ns, 200ns 250ns 120ns XL28C64 XLS28C64

    d0025

    Abstract: No abstract text available
    Text: XL28C64B 8K X 8 CMOS Electrically Erasable PROM 6ms Nonvolatile Write Cycle FEATURES • Fast Read Access Times — 150ns, 200ns and 250ns • Low CMOS Power Consumption — 60mA Active — 200uA (Standby) • 5 Volt-only Operation — Including write • Fast Nonvolatile Write Cycle


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    PDF XL28C64B 150ns, 200ns 250ns 200uA 120ns D0025 D0025 DG025

    Untitled

    Abstract: No abstract text available
    Text: MICROELECTRONICS XL28C256 ExctUtnc* in & Preliminary 32K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle FEA TU R ES • Fast Read A c c e s s Tim es — 150ns, 200ns and 250ns ■ Low CM OS Power Consumption — 60mA Active — 150pA (Stand By)


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    PDF XL28C256 150ns, 200ns 250ns 150pA 120ns 75ps/byte 100pF)

    XL28C256

    Abstract: XLS28C256
    Text: XL28C256 MICROELECTRONICS Excêtonctlnf? Preliminary 32K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle FEA T U R E S PIN C O N F IG U R A TIO N S 28 Pin Plastic DIP Type "P" Package 28 Pin CERDIP Type "C" Package • Fast Read A ccess Tim es


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    PDF XL28C256 150ns, 200ns 250ns 150pA 120ns 75ps/byte 10OpF) 100pF XL28C256 XLS28C256

    XL28C64-200

    Abstract: XL28C64 XL28C64-120 XL28C64-150 XL28C64-250 16JL04
    Text: MICROELECTRONICS XL28C64 E xctlhn c* In & 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN C O N F IG U R A TIO N S FEATURES Fast Read Access Times — 120ns, 150ns, 200ns and 250ns • Low CMOS Power Consumption — 60mA Active — 150 mA (Standby)


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    PDF XL28C64 120ns, 150ns, 200ns 250ns 150mA 120ns 75ps/byte 10OpF) XL28C64-200 XL28C64 XL28C64-120 XL28C64-150 XL28C64-250 16JL04

    XLS28C16b

    Abstract: XLE28C16B
    Text: XL28C16B 2K X 8 CM OS Electrically Erasable PROM FEATURES PIN CONFIGURATION 24 Pin PDIP Type "P" Package • 5 V o lt-o n ly O peration ■ In d u stria l Tem perature Range A vailable XLE28C16B 1 24 ] Vcc A? [ 1 24 Ae [ 2 23 ] a 8 Aa [ 2 23 ] A b As [ 3


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    PDF XL28C16B 100ns, 150ns, 200ns, 250ns XLE28C16B) 120ns XLS28C16b XLE28C16B

    Untitled

    Abstract: No abstract text available
    Text: IMAGE UNAVAILABLE ^DDMt.^7 OSt.3170 TE? • XL28C64 Preliminary BLOCK DIAGRAM The sophisticated architecture of this device provides complete and automatic control of the nonvolatile write cycle eliminating the need for external timers, latches, high voltage generators and supplemental inadvertent


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    PDF XL28C64 64-byte

    28C64

    Abstract: XL28C64 28C64C 28C64 200ns
    Text: IMAGE UNAVAILABLE • T D O 1!t.^7 OSt.3170 TE? ■ This Material Copyrighted By Its Respective Manufacturer XL28C64 Preliminary BLOCK DIAGRAM The sophisticated architecture of this device provides complete and automatic control of the nonvolatile write cycle eliminating the need for external timers, latches,


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    PDF XL28C64 64-byte 28C64 XL28C64 28C64C 28C64 200ns

    XLE28C16B

    Abstract: No abstract text available
    Text: MICROELECTRONICS, INC. XL28C16B E t ttlh f lc s In £ 2K X 8 C M O S Electrically Erasable PR O M FEATURES PIN CONFIGURATION • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns 24 Pin CERDIP Type "C" Package 24 Pin PDIP Type "P” Package [ A> I A, [


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    PDF XL28C16B 100ns, 150ns, 200ns, 250ns XLE28C16B) 150ns XL28C16B XLE28C16B

    Untitled

    Abstract: No abstract text available
    Text: XL28C65A MICROELECTRONICS, INC. Excelle nce in E7 P R E L IM IN A R Y 8K X 8 CM O S Electrically Erasable PROM FEATURES The fully-automatic, 64-byte page-write allows the entire memory to be programmed in less than 0.65 sec. Internal latches, for address and data, free the system


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    PDF XL28C65A 64-byte 28C65A

    XL28C16A

    Abstract: No abstract text available
    Text: /p 7 m i c r o e l e c t r o n i c s , in c . p £ b ixctltnct ui E* | XL28C16A 2K X 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION Fast Read Access Tim es — 100ns, 150ns, 200ns, 250ns Low CMOS Power Consumption — 30mA active max. — 100^1A standby (max.)


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    PDF XL28C16A 100ns, 150ns, 200ns, 250ns XL28C16A

    Untitled

    Abstract: No abstract text available
    Text: MICROELECTRONICS, INC. XL28C16A E x n lltn c a In é 2K X 8 CMOS Electrically Erasable PROM FE A TU R ES PIN C O N F IG U R A TIO N Fast Read A ccess Tim es — 100ns, 150ns, 200ns, 250ns 24 Pin PDIP Type "P" Package 24 Pin CERDIP Type "C" Package —KJ—


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    PDF XL28C16A 100ns, 150ns, 200ns, 250ns 150ns XL28C16A

    EXEL 636

    Abstract: No abstract text available
    Text: ex'e L XL28C16A 2K X 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION 1 24 A7 [ 1 24 ] Vcc 2 23 ] A 8 Ae [ 2 23 ] Ag As 3 22 ] A 9 A5 [ 3 22 ] Ag A< [ 4 21 ] WE A4 [ 4 21 3 WE 20 ] ÖE 3 [ 5 20 J Ô Ë A3 [ 5 A2 [ 6 19 ] A 10 a 18 ] C E At [ 7


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    PDF 100ns, 150ns, 200ns, 250ns 100pA XLE28C16A) XL28C16A EXEL 636

    Untitled

    Abstract: No abstract text available
    Text: MICROELECTRONICS, INC. XL28C16A E xc illin c* In & 2K X 8 CM O S Electrically Erasable PROM FEATURES PIN CONFIGURATION • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns 24 Pin CERDIP Type "C" Package 24 Pin PDIP Type "P" Package At I 1 Ac I 2 As [ 3


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    PDF XL28C16A 100ns, 150ns, 200ns, 250ns XLE28C16A) 150ns

    Untitled

    Abstract: No abstract text available
    Text: MICROELECTRONICS XL28C64B Excttitncein& 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN C O N F IG U R A TIO N S F EA TU R ES • 28 Pin CERDIP Type ’C" Package Fast Read A ccess Tim es — 120ns, 150ns, 200ns and 250ns ■ ■ ■


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    PDF XL28C64B 120ns, 150ns, 200ns 250ns 120ns 100pF) 100pF

    Untitled

    Abstract: No abstract text available
    Text: XL28C64 Preliminary 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN CONFIGURATIONS FEATURES • Fast Read Access Times — 120ns, 150ns, 200ns and 250ns ■ Low CMOS Power Consumption — 60mA Active — 150(iA (Standby) ■ 5 Volt-only Operation


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    PDF XL28C64 120ns, 150ns, 200ns 250ns