d0025
Abstract: No abstract text available
Text: XL28C64B EXEL Microelectronics, Inc. 8K X 8 CMOS Electrically Erasable PROM 6ms Nonvolatile Write Cycle 1 28 VCC A 12 2 27 WE A7 3 26 NC A7 3 26 NC A6 4 25 A8 A6 4 25 A8 A5 5 24 A9 A5 5 24 A9 A4 6 23 A11 A4 6 23 A11 A3 7 22 OE A3 7 22 OE A2 8 21 A10 A2 8 21
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XL28C64B
150ns,
200ns
250ns
120ns
D0025
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Untitled
Abstract: No abstract text available
Text: XL28C16A 1/2 IL08 * C-MOS 2K(2048 x 8)-BIT ELECTRIC ERASABLE PROM - TOP VIEW VDD (+5V) 24 A7 1 A6 2 23 A8 A5 3 22 A9 A4 4 21 WE A3 5 20 OE A2 6 19 A10 A1 7 18 CE A0 8 17 I/O7 I/O0 9 16 I/O6 I/O1 10 15 I/O5 I/O2 11 14 I/O4 12 GND INPUT A0-A10 CE
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PDF
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XL28C16A
A0-A10
A4-A10
384-BIT
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Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS XL28C64B E x txH o n ctin? 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN C O N F IG U R A TIO N S F E A TU R ES • Fast Read A ccess T im es — 120ns, 150ns, 200ns and 250ns ■ Low C M O S P o w er C onsum ption
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XL28C64B
150pA
120ns,
150ns,
200ns
250ns
120ns
100pF
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Untitled
Abstract: No abstract text available
Text: XL28C16A 2K X 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION 24 Pin PDIP Type "P" Package • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns ■ Low CMOS Power Consumption — 30mA active max. — 100jjA standby (max.) A7 Ae Ab A* a3
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XL28C16A
100ns,
150ns,
200ns,
250ns
100jjA
XLE28C16A)
000227b
7A2R014
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non volitile sram
Abstract: d0027
Text: XL28C16B Excellence itt F : 2K X 8 C M O S Electrically Erasable PROM PIN CONFIGURATION FEATURES • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns • • 24 pin PDIP Type "P” Package 16 Byte Page Mode Low CMOS Power Consumption — 30mA active max.
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XL28C16B
100ns,
150ns,
200ns,
250ns
120ns
D0027
non volitile sram
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AN2221
Abstract: 923AT CERDIP-28
Text: eXeL MICROELECTRONICS B xctlltn c* in XL28C64 £* 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN CONFIGURATIONS FEATURES • Fast Read Access Times — 120ns, 150ns, 200ns and 250ns ■ Low CMOS Power Consumption — 60mA Active — 150|JA (Standby)
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XL28C64
120ns,
150ns,
200ns
250ns
120ns
10OpF)
AN2221
923AT
CERDIP-28
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Untitled
Abstract: No abstract text available
Text: XL28C64B Preliminary 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN CONFIGURATIONS FEATURES • Fast Read Access Times — 120ns, 150ns, 200ns and 250ns ■ Low CMOS Power Consumption — 60mA Active — 150|xA (Standby) 2B Pin SOIC
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XL28C64B
120ns,
150ns,
200ns
250ns
XLS28C64B
XLE28C64B,
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EXEL 636
Abstract: No abstract text available
Text: XL28C16A 2K X 8 CM OS Electrically Erasable PROM FEATURES PIN CONFIGURATION 24 Pin PDIP Type ”P" Package • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns Small Outline Type "J“ Package - V-/“ “ A7 [ 1 24 ] A7 [ 1 24 ] Aa [ 2 23 ] ^8
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XL28C16A
100ns,
150ns,
200ns,
250ns
XLE28C16A)
XL28C16A
EXEL 636
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XLS28C64
Abstract: No abstract text available
Text: £XÈL Preliminary XL28C64 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN CONFIGURATIONS FEATURES • Fast Read Access Times — 120ns, 150ns, 200ns and 250ns ■ Low CMOS Power Consumption — 60mA Active — 150|iA (Standby) ■
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PDF
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120ns,
150ns,
200ns
250ns
120ns
XL28C64
XLS28C64
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d0025
Abstract: No abstract text available
Text: XL28C64B 8K X 8 CMOS Electrically Erasable PROM 6ms Nonvolatile Write Cycle FEATURES • Fast Read Access Times — 150ns, 200ns and 250ns • Low CMOS Power Consumption — 60mA Active — 200uA (Standby) • 5 Volt-only Operation — Including write • Fast Nonvolatile Write Cycle
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PDF
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XL28C64B
150ns,
200ns
250ns
200uA
120ns
D0025
D0025
DG025
|
Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS XL28C256 ExctUtnc* in & Preliminary 32K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle FEA TU R ES • Fast Read A c c e s s Tim es — 150ns, 200ns and 250ns ■ Low CM OS Power Consumption — 60mA Active — 150pA (Stand By)
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XL28C256
150ns,
200ns
250ns
150pA
120ns
75ps/byte
100pF)
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XL28C256
Abstract: XLS28C256
Text: XL28C256 MICROELECTRONICS Excêtonctlnf? Preliminary 32K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle FEA T U R E S PIN C O N F IG U R A TIO N S 28 Pin Plastic DIP Type "P" Package 28 Pin CERDIP Type "C" Package • Fast Read A ccess Tim es
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XL28C256
150ns,
200ns
250ns
150pA
120ns
75ps/byte
10OpF)
100pF
XL28C256
XLS28C256
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XL28C64-200
Abstract: XL28C64 XL28C64-120 XL28C64-150 XL28C64-250 16JL04
Text: MICROELECTRONICS XL28C64 E xctlhn c* In & 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN C O N F IG U R A TIO N S FEATURES Fast Read Access Times — 120ns, 150ns, 200ns and 250ns • Low CMOS Power Consumption — 60mA Active — 150 mA (Standby)
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XL28C64
120ns,
150ns,
200ns
250ns
150mA
120ns
75ps/byte
10OpF)
XL28C64-200
XL28C64
XL28C64-120
XL28C64-150
XL28C64-250
16JL04
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XLS28C16b
Abstract: XLE28C16B
Text: XL28C16B 2K X 8 CM OS Electrically Erasable PROM FEATURES PIN CONFIGURATION 24 Pin PDIP Type "P" Package • 5 V o lt-o n ly O peration ■ In d u stria l Tem perature Range A vailable XLE28C16B 1 24 ] Vcc A? [ 1 24 Ae [ 2 23 ] a 8 Aa [ 2 23 ] A b As [ 3
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XL28C16B
100ns,
150ns,
200ns,
250ns
XLE28C16B)
120ns
XLS28C16b
XLE28C16B
|
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Untitled
Abstract: No abstract text available
Text: IMAGE UNAVAILABLE ^DDMt.^7 OSt.3170 TE? • XL28C64 Preliminary BLOCK DIAGRAM The sophisticated architecture of this device provides complete and automatic control of the nonvolatile write cycle eliminating the need for external timers, latches, high voltage generators and supplemental inadvertent
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XL28C64
64-byte
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28C64
Abstract: XL28C64 28C64C 28C64 200ns
Text: IMAGE UNAVAILABLE • T D O 1!t.^7 OSt.3170 TE? ■ This Material Copyrighted By Its Respective Manufacturer XL28C64 Preliminary BLOCK DIAGRAM The sophisticated architecture of this device provides complete and automatic control of the nonvolatile write cycle eliminating the need for external timers, latches,
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PDF
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XL28C64
64-byte
28C64
XL28C64
28C64C
28C64 200ns
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XLE28C16B
Abstract: No abstract text available
Text: MICROELECTRONICS, INC. XL28C16B E t ttlh f lc s In £ 2K X 8 C M O S Electrically Erasable PR O M FEATURES PIN CONFIGURATION • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns 24 Pin CERDIP Type "C" Package 24 Pin PDIP Type "P” Package [ A> I A, [
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XL28C16B
100ns,
150ns,
200ns,
250ns
XLE28C16B)
150ns
XL28C16B
XLE28C16B
|
Untitled
Abstract: No abstract text available
Text: XL28C65A MICROELECTRONICS, INC. Excelle nce in E7 P R E L IM IN A R Y 8K X 8 CM O S Electrically Erasable PROM FEATURES The fully-automatic, 64-byte page-write allows the entire memory to be programmed in less than 0.65 sec. Internal latches, for address and data, free the system
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XL28C65A
64-byte
28C65A
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XL28C16A
Abstract: No abstract text available
Text: /p 7 m i c r o e l e c t r o n i c s , in c . p £ b ixctltnct ui E* | XL28C16A 2K X 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION Fast Read Access Tim es — 100ns, 150ns, 200ns, 250ns Low CMOS Power Consumption — 30mA active max. — 100^1A standby (max.)
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XL28C16A
100ns,
150ns,
200ns,
250ns
XL28C16A
|
Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS, INC. XL28C16A E x n lltn c a In é 2K X 8 CMOS Electrically Erasable PROM FE A TU R ES PIN C O N F IG U R A TIO N Fast Read A ccess Tim es — 100ns, 150ns, 200ns, 250ns 24 Pin PDIP Type "P" Package 24 Pin CERDIP Type "C" Package —KJ—
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XL28C16A
100ns,
150ns,
200ns,
250ns
150ns
XL28C16A
|
EXEL 636
Abstract: No abstract text available
Text: ex'e L XL28C16A 2K X 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION 1 24 A7 [ 1 24 ] Vcc 2 23 ] A 8 Ae [ 2 23 ] Ag As 3 22 ] A 9 A5 [ 3 22 ] Ag A< [ 4 21 ] WE A4 [ 4 21 3 WE 20 ] ÖE 3 [ 5 20 J Ô Ë A3 [ 5 A2 [ 6 19 ] A 10 a 18 ] C E At [ 7
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100ns,
150ns,
200ns,
250ns
100pA
XLE28C16A)
XL28C16A
EXEL 636
|
Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS, INC. XL28C16A E xc illin c* In & 2K X 8 CM O S Electrically Erasable PROM FEATURES PIN CONFIGURATION • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns 24 Pin CERDIP Type "C" Package 24 Pin PDIP Type "P" Package At I 1 Ac I 2 As [ 3
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XL28C16A
100ns,
150ns,
200ns,
250ns
XLE28C16A)
150ns
|
Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS XL28C64B Excttitncein& 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN C O N F IG U R A TIO N S F EA TU R ES • 28 Pin CERDIP Type ’C" Package Fast Read A ccess Tim es — 120ns, 150ns, 200ns and 250ns ■ ■ ■
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XL28C64B
120ns,
150ns,
200ns
250ns
120ns
100pF)
100pF
|
Untitled
Abstract: No abstract text available
Text: XL28C64 Preliminary 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN CONFIGURATIONS FEATURES • Fast Read Access Times — 120ns, 150ns, 200ns and 250ns ■ Low CMOS Power Consumption — 60mA Active — 150(iA (Standby) ■ 5 Volt-only Operation
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OCR Scan
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XL28C64
120ns,
150ns,
200ns
250ns
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