MAX5400
Abstract: MAX5401 MAX5402 8-SOT23 c 50k Potentiometers
Text: WORLD’S SMALLEST 256-TAP DIGITAL POTENTIOMETER Area = 9mm2 x5 mm mm 3 3 Area = 15mm2 ♦ Ultra-Small 8-Pin SOT23 Package x3 mm mm ♦ Extremely Affordable! ONLY 95¢* ♦ 0.1µA Supply Current 8-S 8-µ AX M µPoT 10kΩ OT23 ♦ Low Resistor Tempco: 35ppm/°C
|
Original
|
256-TAP
15mm2
35ppm/
MAX5400
8-SOT23
MAX5401
MAX5402
MAX5400
MAX5401
MAX5402
8-SOT23
c 50k Potentiometers
|
PDF
|
DIODO LN4148
Abstract: A2 diodo zener diodo zener 5.1 B2 diodo 1n4148 diodo s4 diodo s4 81 6.8 B2 diodo a52 zener diode diodo 72 DIODO LED
Text: Microminiature devices diodes book 1 part 3 Outline SO T-23 Type No. | | » Q £ BAV70 X4 BAW66 X5 BAV99 X6 Description Common cathode double diodo Common anode double diodo Two diodes i n series intended for high speed switching. Vrrm Ifrm Max. Reverse Recovery Time, t rr
|
OCR Scan
|
OT-23
BAV70
BAV99
1N4148
200mW
OT-23
BZX84
h--22->
crt6-25
DIODO LN4148
A2 diodo zener
diodo zener 5.1 B2
diodo 1n4148
diodo s4
diodo s4 81
6.8 B2 diodo
a52 zener diode
diodo 72
DIODO LED
|
PDF
|
Untitled
Abstract: No abstract text available
Text: It f in VOLTAGE DETECTOR JL R X 5 V L S E R IE S •OUTLINE The R X 5 V L Series are voltage detector IC s w ith high detector threshold accuracy and ultra-low supply current by C M O S process. Each of these IC s consists of a voltage reference unit, a comparator, resistors for
|
OCR Scan
|
OT-89
OT-23-5
|
PDF
|
Frequency multiplier
Abstract: "Step Recovery Diode" MSA-08XX HSMP-3820 HSMP-3822 x5 frequency multiplier frequency multiplier 1 mhz step recovery diode pin diode microstrip "frequency tripler"
Text: Low Cost Frequency Multipliers Using Surface Mount PIN Diodes Application Note 1054 Introduction PIN switching diodes with low values of transition time can multiply frequencies up to C-band similar to step recovery diodes SRD . These diodes are available in the low-cost SOT-23
|
Original
|
OT-23
MSA-08XX
5091-4918E
5966-4998E
Frequency multiplier
"Step Recovery Diode"
MSA-08XX
HSMP-3820
HSMP-3822
x5 frequency multiplier
frequency multiplier 1 mhz
step recovery diode
pin diode microstrip
"frequency tripler"
|
PDF
|
MSA-08XX
Abstract: Frequency Multipliers x5 hsmp-3822 x5 frequency multiplier comb generator pin diode microstrip HSMP-3820 Dielectric Resonator Oscillator DRO frequency multiplier X3 "Step Recovery Diode"
Text: Low Cost Frequency Multipliers Using Surface Mount PIN Diodes Application Note 1054 Introduction PIN switching diodes with low values of transition time can multiply frequencies up to C-band similar to step recovery diodes SRD . These diodes are available in the low-cost SOT-23 package. Several
|
Original
|
OT-23
5091-4918E
5966-4998E
MSA-08XX
Frequency Multipliers x5
hsmp-3822
x5 frequency multiplier
comb generator
pin diode microstrip
HSMP-3820
Dielectric Resonator Oscillator DRO
frequency multiplier X3
"Step Recovery Diode"
|
PDF
|
HP STEP RECOVERY DIODES
Abstract: MSA-08XX Frequency Multipliers x5 Frequency multiplier frequency multiplier 1 mhz HSMP-3822 comb generator
Text: Low Cost Frequency Multipliers Using Surface Mount PIN Diodes Application Note 1054 Introduction PIN switching diodes with low values of transition time can multiply frequencies up to C-band similar to step recovery diodes SRD . These diodes are available in the low-cost SOT-23
|
Original
|
OT-23
5091-4918E
5966-4998E
HP STEP RECOVERY DIODES
MSA-08XX
Frequency Multipliers x5
Frequency multiplier
frequency multiplier 1 mhz
HSMP-3822
comb generator
|
PDF
|
4FW sot23
Abstract: MFP36 BLC10 JMT025L sot23l-3
Text: 3 PRODUCTS FOR SURFACE MOUNTING TOK O 5ÎI C7 î§ j ' i ' # 1a Products for Surface Mounting Item 32CS 33CS 36CS 3DM 3DF D73LF/LC D73F/C D74F/C D75F/C D75P D76UP Coils D78C D10F 5CA 10RF 12RF B4F B5FL B5F 5CBM 5CDM 5CCB 5CCS 5CCD 5CCA 5CCE 5CCF MC152 MC153
|
OCR Scan
|
D73LF/LC
D73F/C
D74F/C
D75F/C
D76UP
MC152
MC153
R10FH
BLC10
BLC13
4FW sot23
MFP36
JMT025L
sot23l-3
|
PDF
|
BZX84
Abstract: diode ZENER y8 sot23 Y5 sot23 Z4 SOT23 c2v7 C6V2 c5v6 bzx84 z6 C5V1 W5 c47
Text: SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES ISSUE 3 - NOVEMBER 1995 BZX84 SERIES C2V7 to C47 ✪ PIN CONFIGURATION 2 1 3 ! SOT23 ABSOLUTE MAXIMUM RATINGS as per Electron Coding Sytem . PARAMETER SYMBOL VALUE UNIT Voltage Range VZ 2.7 to 47 V Nominal Tolerance
|
Original
|
BZX84
BZX84:
BZX84
diode ZENER y8 sot23
Y5 sot23
Z4 SOT23
c2v7
C6V2
c5v6
bzx84 z6
C5V1
W5 c47
|
PDF
|
bzx84
Abstract: W5 c47 10C11 zener C47
Text: SOT23 SILICON PLANAR BZX84 SERIES C2V7 to C47 VOLTAGE REGULATOR DIODES ISSUE 3 - NO VEMBER 1995 Q PIN CONFIGURATIO N 1 L A ì SOT23 ABSOLUTE MAXIMUM RATINGS as per Electron Coding Sytem . PARAMETER SYMBOL Voltage Range vz Nom inal Tolerance C ±5 % 'f 250
|
OCR Scan
|
BZX84
BZX84:
C13V6
W5 c47
10C11
zener C47
|
PDF
|
SAW MARKING CODE SOT23
Abstract: H8 SOT-23 SOT23 marking D1G SAW MARKING CODE SOT-23 52s marking code AZP51SG marking Z6 AZP51 52S marking microtek
Text: ARIZONA MICROTEK, INC. AZP51 AZP52 AZP53 AZP54 Low Phase Noise Sine Wave to LVPECL Buffer/Divider PACKAGE AVAILABILITY FEATURES BASE PART • • • • • • 3.0 to 3.6 V operating supply range LVPECL Outputs Optimized for Low Phase Noise Frequency Input
|
Original
|
AZP51
AZP52
AZP53
AZP54
SC-70
OT-23
SAW MARKING CODE SOT23
H8 SOT-23
SOT23 marking D1G
SAW MARKING CODE SOT-23
52s marking code
AZP51SG
marking Z6
AZP51
52S marking
microtek
|
PDF
|
BZX84C2V7
Abstract: C4727 c7v zener zener diode c18 C18-C20
Text: BZX84 SERIES C2V7 - C47 SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES PIN CONFIGURATION 1 ABSOLUTE MAXIMUM RATINGS * As per Pro Electron Coding System PARAMETER SYM BOL Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at T amb = 25°C
|
OCR Scan
|
BZX84
BZX84C2V7
C4727
c7v zener
zener diode c18
C18-C20
|
PDF
|
SAW MARKING CODE SOT23
Abstract: SAW MARKING CODE SOT-23 52S marking 52s marking code AZP51SG AZP52 AZP53 AZP54VG AZP51 AZP51S
Text: ARIZONA MICROTEK, INC. AZP51 AZP52 AZP53 AZP54 Low Phase Noise Sine Wave to LVPECL Buffer/Divider PACKAGE AVAILABILITY FEATURES BASE PART • • • • • • 3.0 to 3.6 V operating supply range LVPECL Outputs Optimized for Low Phase Noise Frequency Input
|
Original
|
AZP51
AZP52
AZP53
AZP54
SC-70
OT-23
SAW MARKING CODE SOT23
SAW MARKING CODE SOT-23
52S marking
52s marking code
AZP51SG
AZP52
AZP53
AZP54VG
AZP51
AZP51S
|
PDF
|
2322 734 61003L
Abstract: 2322 730 91002L ssl2101t zener diode phc 2322 724 61003L zener PH-C GRM31CR61C106KC31L diode N1004 zener diode phc 47 fusistor
Text: UM10342 SSL2101 3 W mains dimmable buck board Rev. 01 — 28 September 2009 User manual Document information Info Content Keywords SSL2101, LED driver, AC/DC conversion, dimmable, mains supply, driver, user manual Abstract This is a user manual for the SSL2101 3 W mains dimmable buck driver
|
Original
|
UM10342
SSL2101
SSL2101,
UM10342
2322 734 61003L
2322 730 91002L
ssl2101t
zener diode phc
2322 724 61003L
zener PH-C
GRM31CR61C106KC31L
diode N1004
zener diode phc 47
fusistor
|
PDF
|
SK 18751
Abstract: RR0510S-80R6-FN ALC269 FIC CW0A0 TRANSISTOR SMD K27 smd transistor g28 w32 smd transistor w27 smd transistor 1TJE125DP1A000B aPM4906
Text: 5 4 3 2 1 First International Computer,Inc Portable Computer Group HW Department D Board name : Mother Board Schematic D 1. Schematic Page Description : Project : CW0A0/CW0A1 Diamondville+945GMS+ICH7M Version : 0.1 2. PCI & IRQ & DMA Description : 3. Block Diagram :
|
Original
|
945GMS
NTC017-BA1G-A160T
SK 18751
RR0510S-80R6-FN
ALC269
FIC CW0A0
TRANSISTOR SMD K27
smd transistor g28
w32 smd transistor
w27 smd transistor
1TJE125DP1A000B
aPM4906
|
PDF
|
|
DO3316-472
Abstract: LT1306 LT1306ES8 MMBD914LT1 TAJA105K020 TAJC226M010 TPSE227M010R0100 dc dc converter 5v 600mA, 1.4MHz voltage regulator PWM 1999 transconductance sink
Text: Final Electrical Specifications LT1306 Synchronous, Fixed Frequency Step-Up DC/DC Converter September 1999 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Output Disconnected from Input During Shutdown Output Voltage Remains Regulated When VIN > VOUT
|
Original
|
LT1306
300kHz
600kHz
LT1610
LT1613
OT-23
200mA
OT-23
LT1615
DO3316-472
LT1306
LT1306ES8
MMBD914LT1
TAJA105K020
TAJC226M010
TPSE227M010R0100
dc dc converter 5v
600mA, 1.4MHz
voltage regulator PWM 1999 transconductance sink
|
PDF
|
LQFP-48 thermal pad
Abstract: exposed QFP 144 CQFP 240 QFP-128 20 x 14 pad exposed QFP 128 BGA-64 pad LQFP-64 thermal pad 2-CQFP SOT23-6 1152 BGA 144
Text: Thermal Characteristics of IC Assembly method for using this board is specified by the SEMI standard G38-87. These standards are available in the SEMI International Standards book, Volume 4, for packaging. INTRODUCTION The purpose of this document is to provide a centralized
|
Original
|
G38-87.
LQFP-48 thermal pad
exposed QFP 144
CQFP 240
QFP-128 20 x 14 pad
exposed QFP 128
BGA-64 pad
LQFP-64 thermal pad
2-CQFP
SOT23-6 1152
BGA 144
|
PDF
|
Hard Disk drive spindle motor control inductive sense
Abstract: design ideas hard drive spindle motors diagram Philips stepper motor PHC21025 EIGHT MOSFET ARRAY Silicon P-Channel Junction FET sot23 Dual N FET spindle and VCM motor controller PHN405
Text: IDEAS FOR DESIGN Page Power/battery switching using VD-MOS FETs 2 Drivers for brushless DC motors 4 Using the PHN708 and PHN405 in hard disk drives 6 Siren driver circuit for car alarms 9 Printed circuit board heatsink area for surface-mount packages 10 Philips Semiconductors
|
Original
|
PHN708
PHN405
MBB446
OT223
Hard Disk drive spindle motor control inductive sense
design ideas
hard drive spindle motors diagram
Philips stepper motor
PHC21025
EIGHT MOSFET ARRAY
Silicon P-Channel Junction FET sot23
Dual N FET
spindle and VCM motor controller
|
PDF
|
D03316-153
Abstract: d03316-103 D03316-472 LT1613 Cross References LT1306 LT1306ES8 MMBD914LT1 D03308-103 A22 SOT-23
Text: m m & L b ilim s ì Final Electrical Sp e cifica tio n s u fm TECHNOLOGY LT1306 Synchronous, Fixed Frequency Step-Up DC/DC Converter S e p te m b e r 1999 F€flTUR€S DCSCRIPTIOn • Output Disconnected from Input During Shutdown ■ Output Voltage Remains Regulated
|
OCR Scan
|
300kHz
LT1317/LT1317B
600kHz
100nA
LT1610
LT1613
OT-23
200mA
LT1615
D03316-153
d03316-103
D03316-472
LT1613 Cross References
LT1306
LT1306ES8
MMBD914LT1
D03308-103
A22 SOT-23
|
PDF
|
NDS332P
Abstract: No abstract text available
Text: N July 1996 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is
|
Original
|
NDS332P
NDS332PRev.
NDS332P
|
PDF
|
NDS351AN
Abstract: No abstract text available
Text: N July 1996 NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is
|
Original
|
NDS351AN
OT-23
NDS351AN
|
PDF
|
nds352ap g
Abstract: NDS352AP
Text: N July 1996 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is
|
Original
|
NDS352AP
NDS352Ap
nds352ap g
|
PDF
|
NDS335N
Abstract: NDS335
Text: July 1996 NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
|
Original
|
NDS335N
OT-23
NDS335
NDS335N
|
PDF
|
NDS356AP
Abstract: No abstract text available
Text: September 1996 NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high
|
Original
|
NDS356AP
NDS356AP
|
PDF
|
NDS352AP
Abstract: nds352
Text: N July 1996 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process
|
Original
|
NDS352AP
NDS352Ap
nds352
|
PDF
|