X29F1610 Search Results

00F1H

Contextual Info: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles

Contextual Info: MXIC X29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture

Contextual Info: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture

Contextual Info: I V L I C MX9691L SINGLE CHIP SOLID STATE DISK CONTROLLER 1. FEATURE Host Interface Buffer RAM Manager • PCMCIA 2.1 and PC Card ATA standard compatible. - Memory mapped or I/O operation. • Compatible with all PC Card Services and Socket Service. • Fast ATA host-to-buffer burst transfer rates up to

00F1H

Contextual Info: TM M X29F161Q MACftOMX, INC. 1 B IS A -B n tS M x 8 / 1 M x 1 B C M 0 8 S IN G L E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 100,000 write/erase cycles

Contextual Info: PRELIMINARY MX29F1 61 OA/B 16M-BIT [2M x8/1 M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 0.9ms typical - Byte programming time: 7us in average