93c86vi
Abstract: 93C86V
Text: CAT93C86 Rev. C 16K-Bit Microwire Serial EEPROM FEATURES DESCRIPTION High speed operation: 3 MHz Low power CMOS technology 1.8 to 5.5 volt operation Selectable x8 or x16 memory organization Self-timed write cycle with auto-clear
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CAT93C86
16K-Bit
CAT93C86
93c86vi
93C86V
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28f800b5
Abstract: 28F002BC 28F008 28F200B5 28F800 AB-60 ab-65 28f400
Text: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview December 1996 Order Number: 292154-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
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AB-60
AP-611
AB-65
28f800b5
28F002BC
28F008
28F200B5
28F800
AB-60
28f400
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General Electric C 524 k
Abstract: MR53V8052J-XXRA DIP42-P-600-2 MR53V8052J MR53V8052J-XXMA MR53V8052J-XXTP
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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D-41460
General Electric C 524 k
MR53V8052J-XXRA
DIP42-P-600-2
MR53V8052J
MR53V8052J-XXMA
MR53V8052J-XXTP
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PC MOTHERBOARD msi SERVICE MANUAL
Abstract: 16C550 82077AA CR01 CR02 FDC37N769 NS16C550
Text: FDC37N769 3.3V Super I/O Controller with Infrared Support for Portable Applications FEATURES 3.3 Volt Operation Intelligent Auto Power Management 16 Bit Address Qualification Optional 2.88MB Super I/O Floppy Disk Controller - Licensed CMOS 765B Floppy Disk Controller
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FDC37N769
82077AA
PC MOTHERBOARD msi SERVICE MANUAL
16C550
CR01
CR02
FDC37N769
NS16C550
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PC2-5300U-555-12
Abstract: 5300U-555
Text: January 2007 HYS64T32400HU–3S–B HYS64T64400HU–3S–B HYS64T 32400H U – 3 . 7 – B HYS64T 64400H U – 3 . 7 – B 240-Pin unbuffered DDR2 SDRAM Modules DDR2 SDRAM UDIMM SDRAM RoHS Compliant Internet Data Sheet Rev. 1.01 Internet Data Sheet HYS64T[32/64]400HU–[3S/3.7]–B
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HYS64T32400HU
HYS64T64400HU
HYS64T
32400H
64400H
240-Pin
400HU
PC2-5300U-555-12
5300U-555
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Untitled
Abstract: No abstract text available
Text: V54C3256 16/80/40 4VD*I 256Mbit SDRAM, INDUSTRIAL TEMPERATURE 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3
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V54C3256
256Mbit
x16Mbit
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Untitled
Abstract: No abstract text available
Text: V54C3256 16/80/40 4VD 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns
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V54C3256
256Mbit
x16Mbit
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Untitled
Abstract: No abstract text available
Text: V54C3256 16/80/40 4VH 256Mbit SDRAM 3.3 VOLT, TSOP II / FBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 6 7PC 7 System Frequency (fCK) 166 MHz 143 MHz 143 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns Clock Access Time (tAC2) CAS Latency = 2
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V54C3256
256Mbit
16Mbit
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93c66
Abstract: 93C86 01XXXXXXXXX
Text: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention ■ Low power CMOS technology
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CAT93C46/56/57/66/86
1K/2K/2K/4K/16K-Bit
93C56/57/66:
93C46/86:
CAT93C46)
CAT93C86
CAT93C46/56/57/66/86
93c66
93C86
01XXXXXXXXX
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93C56
Abstract: 93C56 14 pins 93C46SI
Text: CAT93C46/56/57/66/86 "GREEN" PACKAGES -Lead free 1K/2K/2K/4K/16K-Bit Microwire Serial EEPROM FEATURES • High speed operation: ■ Power-up inadvertant write protection ■ 1,000,000 Program/erase cycles – 93C56/57/66: 1MHz – 93C46/86: 3MHz ■ 100 year data retention
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CAT93C46/56/57/66/86
1K/2K/2K/4K/16K-Bit
93C56/57/66:
93C46/86:
CAT93C46)
CAT93C86
CAT93C46/56/57/66/86
93C56
93C56 14 pins
93C46SI
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eiaj edr-7320
Abstract: 93c86v
Text: H EE GEN FR ALO CAT93C86 Die Rev. C 16K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: 3MHz ■ Sequential read ■ Low power CMOS technology ■ Program enable (PE) pin ■ 1.8 to 5.5 volt operation ■ 1,000,000 Program/erase cycles
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CAT93C86
16K-Bit
CAT93C86
eiaj edr-7320
93c86v
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csi 93c46vi
Abstract: csi 93c46 93c46vi 93c46li CSI 93C46LI 93c46v CSI 93C46L csi 93c46v 2106D 93c46 rotate
Text: CAT93C46 1K-Bit Microwire Serial EEPROM FEATURES DESCRIPTION • High speed operation: 1MHz The CAT93C46 is a 1K-bit Serial EEPROM memory device which is configured as either registers of 16 bits ORG pin at VCC or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the
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CAT93C46
CAT93C46
csi 93c46vi
csi 93c46
93c46vi
93c46li
CSI 93C46LI
93c46v
CSI 93C46L
csi 93c46v
2106D
93c46 rotate
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93C66S
Abstract: 93C66SI CAT93C57
Text: H EE GEN FR ALO CAT93C66 Die Rev. E 4K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: 1MHz ■ Power-up inadvertant write protection ■ Low power CMOS technology ■ 1,000,000 Program/erase cycles ■ 1.8 to 6.0 volt operation
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CAT93C66
CAT93C66
93C66S
93C66SI
CAT93C57
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csi 93c46vi
Abstract: 93c46li csi 93c46 CSI 93C46LI 93c46vi CSI 93C46L csi 93c46v 24C168 93C46L CSI93C46LI
Text: CAT93C46 1K-Bit Microwire Serial EEPROM FEATURES DESCRIPTION • High speed operation: 1MHz The CAT93C46 is a 1K-bit Serial EEPROM memory device which is configured as either registers of 16 bits ORG pin at VCC or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the
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CAT93C46
CAT93C46
csi 93c46vi
93c46li
csi 93c46
CSI 93C46LI
93c46vi
CSI 93C46L
csi 93c46v
24C168
93C46L
CSI93C46LI
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ST 93c86
Abstract: CAT93C86 93C86L CAT93C57
Text: H EE GEN FR ALO CAT93C86 Die Rev. C 16K-Bit Microwire Serial EEPROM LE A D F R E ETM FEATURES • High speed operation: 3MHz ■ Sequential read ■ Low power CMOS technology ■ Program enable (PE) pin ■ 1.8 to 5.5 volt operation ■ 1,000,000 Program/erase cycles
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CAT93C86
16K-Bit
CAT93C86
ST 93c86
93C86L
CAT93C57
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transistor BD 222 SMD
Abstract: D13005 transistor SMD 12W D13005 transistor transistor SMD 12W MOSFET D13005 E transformer winding formula 220v Ac to 12v Dc
Text: ACT337 Rev 2, 14-Nov-12 High Performance ActivePSRTM Primary Switching Regulator utilizes Active-Semi’s proprietary primary-side feedback architecture to provide accurate constant voltage, constant current CV/CC regulation without the need of an opto-coupler or reference
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ACT337
14-Nov-12
ACT337
transistor BD 222 SMD
D13005
transistor SMD 12W
D13005 transistor
transistor SMD 12W MOSFET
D13005 E
transformer winding formula 220v Ac to 12v Dc
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c040
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 16 Megabit High Speed C M O S SRAM 1 DPS M X 16 M K n 3 SLCC Stack D E S C R IP T IO N : The D PS1M X16M K n3 High Speed S R A M "S T A C K " modules area re volu tion ary new m em ory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCQ.
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16-Megabits
500mV
30A129-04
c040
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cb-rj
Abstract: No abstract text available
Text: DENSE-PAC ^ _ Me abit CMOSdram 32 8 MICROSYSTEMS X16M2H3 PRELIMINARY DESCRIPTION: TheDPD2M X16M 2H3 "STA C K" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCQ stacked and leaded for
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DPD2MX16M2H3
32-Megabits
DPD2MX16M2H3
30A108-18
100ns
3QA10B-18
cb-rj
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Untitled
Abstract: No abstract text available
Text: Ä M Ä K I I 0 M F @ [^ O ii]Ä ¥ 0 ® M VS28F016XS, MS28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • VS28F016XS 40°C to +125°C — QML Certified — SE2 Grade ■ 0.25 MB/sec Write Transfer Rate ■ MS28F016XS 55°C to 125°C
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VS28F016XS,
MS28F016XS
16-MBIT
VS28F016XS
MS28F016XS
VE28F008,
M28F008
28F016SA
56-Lead
128-Kbyte
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Untitled
Abstract: No abstract text available
Text: PRODUCT PREVIEW Smart5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 28F200B5, 28F400B5, 28F800B5 • SmartVoltage Technology — Smart5™ Flash: 5V Reads, 5V or 12V Writes — Increased Programming Throughput at 12V V pp ■ Very High-Performance Read — 2-, 4-Mbit: 60 ns Access Time
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28F200B5,
28F400B5,
28F800B5
x8/x16-Configurable
4fl2bl75
D174733
28F002/200BX-T/B
28F002/200BL-T/B
28F002/400BL-T/B
28F002/400BX-T/B
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93c tssop
Abstract: 93C86
Text: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz 1,000,000 Program/Erase Cycles 100 Year Data Retention ■ Low Power CMOS Technology ■ 1.8 to 6.0 Volt Operation
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CAT93C46/56/57/66/86
1K/2K/2K/4K/16K-Bit
93C46/56/57/66:
93C86:
93C46)
93C86
devi40)
MS001
0G034G2
93c tssop
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MAX714
Abstract: No abstract text available
Text: IS5F ¡ IB 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation ADVANCE INFORMATION JULY 1997 Industrial Temperature Operation 40°C to +85°C • High-Performance Read
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x8/x16
32-bit
16-KB
96-KB
128-KB
PK13197T48
MAX714
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AB28F200B5B80
Abstract: AB28F400B5B80 E28F800B5T90 AB28F400B5 AB28F400B5B80 FLASH tb28f200b5 AB28F
Text: 5 VOLT BOOT BLOCK FLASH MEMORY 28F200B5, 28F004/400B5, 28F800B5 x8/x16 • SmartVoltage Technology — 5 Volt Boot Block Flash: 5 V Reads, 5 V or 12 V Writes — Increased Programming Throughput at 12 V Vpp ■ Very High-Performance Read — 2-, 4-Mbit: 55 ns Access Time
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28F200B5,
28F004/400B5,
28F800B5
x8/x16)
x8/x16-Configurable
16-KB
96-KB
128-KB
48-Lead
44-Lead
AB28F200B5B80
AB28F400B5B80
E28F800B5T90
AB28F400B5
AB28F400B5B80 FLASH
tb28f200b5
AB28F
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29053
Abstract: No abstract text available
Text: [p[F3 [U ©T 1PIF3G in te i 8-MBIT 512K X 16,1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F800BV-T/B, 28F800CV-T/B, 28F008BV-T/B, 28F800CE-T/B, 28F008BE-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation
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1024K
28F800BV-T/B,
28F800CV-T/B,
28F008BV-T/B,
28F800CE-T/B,
28F008BE-T/B
28F004/400BX-T/B
AP-604
AP-617
AB-57
29053
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