ana 608
Abstract: E0000 M28F008
Text: M28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY Y High-Density Symmetrically Blocked Architecture Sixteen 64 Kbyte Blocks Y Extended Cycling Capability 10K Block Erase Cycles Minimum 160K Block Erase Cycles per Chip Y Automated Byte Write and Block Erase Command User Interface
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M28F008
40-Lead
42-Lead
ana 608
E0000
M28F008
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ana 608
Abstract: mc28f008 E0000 M28F008
Text: M28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY Y High-Density Symmetrically Blocked Architecture Sixteen 64 Kbyte Blocks Y Extended Cycling Capability 10K Block Erase Cycles Minimum 160K Block Erase Cycles per Chip Y Automated Byte Write and Block Erase Command User Interface
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Original
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PDF
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M28F008
40-Lead
42-Lead
ana 608
mc28f008
E0000
M28F008
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MS3406
Abstract: 28F016SA 28F016XS M28F008 MS28F016SV VE28F008 intel 27135
Text: VS28F016XS MS28F016XS 16-MBIT 1 MBIT x 16 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Y Y Y Y VS28F016XS b 40 C to a 125 C SE2 Grade MS28F016XS b 55 C to 125 C QML Certified SE1 Grade Effective Zero Wait-State Performance up to 25 MHz Synchronous Pipelined Reads
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Original
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PDF
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VS28F016XS
MS28F016XS
16-MBIT
VS28F016XS
56-Lead
VE28F008
M28F008
28F016SA
MS28F016XS
128-Kbyte
MS3406
28F016XS
MS28F016SV
VE28F008
intel 27135
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BY267
Abstract: 28F0165V 2dcc 28F016SA M28F008 MS28F016SV VE28F008 VS28F016SV
Text: VS28F016SV MS28F016SV 16-Mbit 1-Mbit x 16 2-Mbit x 8 FlashFile TM MEMORY Y Y VS28F016SV b 40 C to a 125 C SE2 Grade MS28F016SV b 55 C to a 125 C QML Certified SE1 Grade Y SmartVoltage Technology User-Selectable 3 3V or 5V VCC User-Selectable 5V or 12V VPP
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Original
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PDF
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VS28F016SV
MS28F016SV
16-Mbit
VS28F016SV
VE28F008
M28F008
256-Byte
VE28F008
M28F008
28F016SA
BY267
28F0165V
2dcc
MS28F016SV
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MS28F016SV
Abstract: 28F016SA M28F008 VE28F008 VS28F016SV Verilog Block Error Code 15-word block of 8-bit d MS28F016SV100
Text: VS28F016SV MS28F016SV 16-Mbit 1-Mbit x 16 2-Mbit x 8 FlashFile TM MEMORY Y Y VS28F016SV b 40 C to a 125 C QML Certified SE2 Grade MS28F016SV b 55 C to a 125 C QML Certified SE1 Grade Y SmartVoltage Technology User-Selectable 3 3V or 5V VCC User-Selectable 5V or 12V VPP
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Original
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PDF
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VS28F016SV
MS28F016SV
16-Mbit
VS28F016SV
VE28F008
M28F008
256-Byte
VE28F008
M28F008
56-Lead
MS28F016SV
28F016SA
Verilog Block Error Code 15-word block of 8-bit d
MS28F016SV100
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intel 27123
Abstract: 29043 intel motherboard 915 CIRCUIT diagram M28F008SA
Text: ß ff llE U B lß O M y in te i M28F008SA 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Very High-Performance Read — 120 ns Maximum Access Time Extended Cycling Capability — 10K Block Erase Cycles
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OCR Scan
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PDF
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M28F008SA
40-Lead
CG/SALE/101789
intel 27123
29043
intel motherboard 915 CIRCUIT diagram
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Untitled
Abstract: No abstract text available
Text: in te i M28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Extended Cycling Capability — 10K Block Erase Cycles Minimum — 160K Block Erase Cycles per Chip Automated Byte Write and Block Erase
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OCR Scan
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PDF
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M28F008
40-Lead
42-Lead
Mic00
2L17S
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intel i7 processor mtbf
Abstract: Intel i7 MTBF 4b2l
Text: in te i M28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Extended Cycling Capability — 10K Block Erase Cycles Minimum — 160K Block Erase Cycles per Chip Automated Byte Write and Block Erase
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OCR Scan
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PDF
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M28F008
M28F008
42-Lead
402bl75
01bT77fl
intel i7 processor mtbf
Intel i7 MTBF
4b2l
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ANA 608
Abstract: ER27
Text: [ p f f i iy M D K g A iH n f in te i M28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Extended Cycling Capability — 10K Block Erase Cycles Minimum — 160K Block Erase Cycles per Chip Automated Byte Write and Block Erase
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OCR Scan
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PDF
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M28F008
M28F008
42-Lead
ANA 608
ER27
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Untitled
Abstract: No abstract text available
Text: Ä M Ä K I I 0 M F @ [^ O ii]Ä ¥ 0 ® M VS28F016XS, MS28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • VS28F016XS 40°C to +125°C — QML Certified — SE2 Grade ■ 0.25 MB/sec Write Transfer Rate ■ MS28F016XS 55°C to 125°C
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OCR Scan
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PDF
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VS28F016XS,
MS28F016XS
16-MBIT
VS28F016XS
MS28F016XS
VE28F008,
M28F008
28F016SA
56-Lead
128-Kbyte
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Untitled
Abstract: No abstract text available
Text: irrtel A Q W A N G B D K l F K (M Â ¥ 0 (fil M28F016SA 16 MBIT (1 MBIT x 16, 2 MBIT x 8 FLASH FI LE MEMORY User-Selectable 3.3V or 5V V q c 1 mA Typical Icc in Static Mode User-Configurable x8 or x16 Operation 100 ns Maximum A ccess Time at 5V 1 jliA Typical Deep Power-Down
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OCR Scan
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PDF
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M28F016SA
M28F008SA
M28F016SA
16-Mbit
M28F008SA
M28F016SAâ
x8/x16
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MS28F016SV85
Abstract: 297372 2BF016SV-085 56LSSOP
Text: ABW AKKSB fl!M[P ffi MA70@ Kl VS28F016SV, MS28F016SV 16-Mbit (1-Mbit x 16, 2-Mbit x 8 FlashFile MEMORY • Configurable x8 or x16 Operation _ 56-Lead SSOP Plastic Package ■ VS28F016SV 40°C to + 125°C — QML Certified — SE2 Grade ■ Backwards-Compatible with VE28F008
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OCR Scan
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PDF
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VS28F016SV,
MS28F016SV
16-Mbit
VS28F016SV
VS/MS28F016SV,
16-Mbit
01bT754
MS28F016SV85
297372
2BF016SV-085
56LSSOP
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MS28F016SV85
Abstract: No abstract text available
Text: in te i VS28F016SV, MS28F016SV 16-Mbit 1-Mbit x 16, 2-Mbit x 8 FlashFile MEMORY VS28F016SV 40°C to + 125°C — QML Certified — SE2 Grade MS28F016SV 55°C to +125°C — QML Certified — SE1 Grade Smart Voltage Technology — User-Selectable 3.3V or 5V Vcc
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OCR Scan
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PDF
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VS28F016SV,
MS28F016SV
16-Mbit
VS28F016SV
56-Lead
VE28F008
M28F008
VE28F008,
MS28F016SV85
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297372
Abstract: intel 27123 271305
Text: AQWADÜK&B ONPOOSDSlAirDOM VS28F016SV, MS28F016SV FlashFile MEMORY • VS28F016SV 40°C to + 125°C — SE2 Grade ■ Configurable x8 or x16 Operation 56-Lead, 0.8mm x 13.5mm SSOP Plastic Package ■ MS28F016SV 55°C to +125°C — QML Certified — SEI Grade
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OCR Scan
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PDF
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VS28F016SV,
MS28F016SV
VS28F016SV
VS/MS28F016SV,
16-Mbit
28F016SV
28F016SA
297372
intel 27123
271305
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