Untitled
Abstract: No abstract text available
Text: HEDFM103G . HEDFM107G 1.0 Amp. Miniature Glass Passivated Ultrafast Bridge Rectifier DFM Current 1.0 A Voltage 200 V to 1000 V FEATURES Ultrafast reverse recovery time for high frequency Ideal for automated insertion High forward surge current capability
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HEDFM103G
HEDFM107G
2002/95/EC
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
JESD22-B102.
Dec-11
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X13mm
Abstract: transistor 1Bs DF005SA DF10SA
Text: DF005SA THRU DF10SA MINIATURE GLASS PASSIVATED SINGLE-PHASE SURFACE MOUNT BRIDGE RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. • Glass passivated chip junctions.
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DF005SA
DF10SA
250oC/10
MIL-STD-750,
50mVP-P
X13mm
transistor 1Bs
DF10SA
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JESD97
Abstract: M29DW128F TSOP56 6C80
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29DW128F
TSOP56
32-Word
16Mbit
48Mbit
16Mbit
TBGA64
JESD97
M29DW128F
TSOP56
6C80
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M29W128FL
Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29W128FH
M29W128FL
Words/16
TSOP56
32-Word
64-Bytes)
M29W128FL
Memory Protection Devices
M29W128FH
JESD97
M29W128F
TSOP56
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Untitled
Abstract: No abstract text available
Text: HEDFM103G . HEDFM107G 1.0 Amp. Miniature Glass Passivated Ultrafast Bridge Rectifier Current 1.0 A Voltage 200 V to 1000 V DFM FEATURES Ultrafast reverse recovery time for high frequency Ideal for automated insertion High forward surge current capability
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Original
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PDF
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HEDFM103G
HEDFM107G
2002/95/EC
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
JESD22-B102.
Dec-11
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JESD97
Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
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M29DW128F
TSOP56
32-Word
TBGA64
16Mbit
48Mbit
16Mbit
JESD97
M29DW128F
TSOP56
esn 234
D2578
5PWA
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MOLYNX
Abstract: wiring diagram of cctv camera NACP20 PLW231 ptz camera pcb circuit diagram PLW233 INS00053 TRX228 ptz camera wiring diagram cctv camera circuit diagram
Text: INSTALLATION INSTRUCTIONS INS00054 Issue 8 CONTENTS PAGE Important Notes / Preventative Maintenance . 1 General Description / Contents Of Box . 2
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INS00054
RS485
MOLYNX
wiring diagram of cctv camera
NACP20
PLW231
ptz camera pcb circuit diagram
PLW233
INS00053
TRX228
ptz camera wiring diagram
cctv camera circuit diagram
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M29W128G
Abstract: M29W128GH M29W128GL
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL128H/L vs NUMONYX Flash M29W128G This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 06/16 2005 Eon Silicon Solution Inc. www.eonssi.com
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EN29GL128H/L
M29W128G
M29W128G
EN29GL128H/L
500ns
M29W128GH
M29W128GL
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Untitled
Abstract: No abstract text available
Text: IS42S32160A1 4M Words x 32 Bits x 4 Banks 512-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (4M x 32bit x 4bank) · Programmable Mode
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IS42S32160A1
512-MBIT)
32bit
cycles/64ms
8x13mm,
IS42S32160A1
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Untitled
Abstract: No abstract text available
Text: IS42S32800D 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM PRELIMINARY INFORMATION OCTOBER 2007 FEATURES DESCRIPTION • Concurrent auto precharge • Clock rate:166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (2M x 32bit x 4bank)
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IS42S32800D
256-Mbit)
32bit
cycles/64ms
8x13mm,
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Untitled
Abstract: No abstract text available
Text: HEDFS103G . HEDFS107G 1.0 Amp. Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifier DFS Current 1.0 A Voltage 200 V to 1000 V FEATURES Ultrafast reverse recovery time for high frequency Ideal for automated placement High forward surge current capability
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HEDFS103G
HEDFS107G
2002/95/EC
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
JESD22-B102.
Dec-11
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DQ141
Abstract: No abstract text available
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
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M29DW128F
32-Word
16Mbit
48Mbit
16Mbit
DQ141
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IS42S32800D-7BLI
Abstract: IS42S32800D IS42S32800D-7TLI IS42S32800D-6BL IS42S32800D-6TL IS42S32800D-7TL IS42S32800D-6TLI
Text: IS42S32800D 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM PRELIMINARY INFORMATION NOVEMBER 2007 FEATURES DESCRIPTION • Concurrent auto precharge • Clock rate:166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (2M x 32bit x 4bank)
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IS42S32800D
256-Mbit)
32bit
cycles/64ms
8x13mm,
IS42S32800D-7BLI
IS42S32800D
IS42S32800D-7TLI
IS42S32800D-6BL
IS42S32800D-6TL
IS42S32800D-7TL
IS42S32800D-6TLI
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Bridge Rectifier DB 045
Abstract: 152G 155G DB151G DB157G
Text: 1.5A Glass Passivated Bridge Rectifier DB151G – DB157G 1.5A Glass Passivated Bridge Rectifier Features • Glass passivated chip junction • Low leakage • High surge current capability • Ideal for printed circuit boards • High temperature soldering guaranteed: 260˚C/10 seconds
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DB151G
DB157G
MIL-STD-202,
Bridge Rectifier DB 045
152G
155G
DB151G
DB157G
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Untitled
Abstract: No abstract text available
Text: IS42S32800 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM P JANUARY 2008 FEATURES DESCRIPTION • • • • • • The ISSI IS42S32800 is a high-speed CMOS configured as a quad 2M x 32 DRAM with asynchronous interface (all signals are registered on the positive
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IS42S32800
256-Mbit)
IS42S32800
termina96
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Lpddr2 Idd7
Abstract: 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1
Text: 512Mb LPSDR SDRAM NT6SM16M32AK Feature Options Fully synchronous; all signals registered on positive edge of Marking VDD /VDDQ system clock -1.8V/1.8V M Internal, pipelined operation; column address can be changed Configuration every clock cycle
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512Mb
NT6SM16M32AK
-16Meg
-90-ball
x13mm)
16M32
Lpddr2 Idd7
216-ball LPDDR2
NT6SM16M32
NT6SM16M32AK-S1
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 8,192 x 8,192 IDT72V73250 FEATURES: DESCRIPTION: • • The IDT72V73250 has a non-blocking switch capacity of 8,192 x 8,192 channels at 32.768Mb/s. With 16 inputs and 16 outputs, programmable per stream control, and a variety of operating modes the IDT72V73250 is designed
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IDT72V73250
IDT72V73250
768Mb/s.
BB144-1)
DA144-1)
72V73250
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 16,384 X 16,384 FEATURES: • • • • • • • • • • • • • • 16K x 16K non-blocking switching at 32.768Mb/s 32 serial input and output streams Accepts single-bit single-data streams at 32.768Mb/s
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IDT72V73260
768Mb/s
IEEE-1149
BB144-1)
BB208-1)
DA144-1)
72V73260
drw18
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 16,384 X 16,384 ADVANCE INFORMATION IDT72V73260 FEATURES: DESCRIPTION: • • The IDT72V73260 has a non-blocking switch capacity of 16,384 x 16,384 channels at 32.768 Mb/s. With 32 inputs and 32 outputs, programmable per
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IDT72V73260
IDT72V73260
DA144-1)
BB144-1)
72V73260
drw16
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT72V73250 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 8,192 x 8,192 FEATURES: DESCRIPTION: • • The IDT72V73250 has a non-blocking switch capacity of 8,192 x 8,192 channels at 32.768Mb/s. With 16 inputs and 16 outputs, programmable per stream control, and a variety of operating modes the IDT72V73250 is designed
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IDT72V73250
IDT72V73250
768Mb/s.
DA144-1)
BB144-1)
72V73250
drw16
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M29W128FL
Abstract: JESD97 M29W128F M29W128FH TSOP56 a12a22
Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29W128FH
M29W128FL
Words/16
TSOP56
32-Word
64-Bytes)
TBGA64
M29W128FL
JESD97
M29W128F
M29W128FH
TSOP56
a12a22
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125OC
Abstract: DF10S 005-S
Text: DF005S THRU DF10S MINIATURE GLASS PASSIVATED SINGLE-PHASE Surface Mount Bridge Rectifiers Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Ampere DB-S Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. • Glass passivated chip junctions.
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DF005S
DF10S
260oC/10
MIL-STD-750,
125OC
DF10S
005-S
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DBLS157G
Abstract: 157G DBLS 157G
Text: DBLS154G . DBLS159G Single Phase 1.5 Amp. Glass Passivated Bridge Rectifiers Dimensions in mm. CASE: THIN DF-S Current 1.5 A Voltage 400 V-1400 V • Glass passivated junction • Ideal for printed circuit board • Reliable low cost construction utilizing
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DBLS154G
DBLS159G
MIL-STD-202,
50mVp-p
DBLS157G
157G
DBLS 157G
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DF005M
Abstract: DF10M
Text: DF005M THRU DF10M MINIATURE GLASS PASSIVATED SINGLE - PHASE BRIDGE RECTIFIER VOLTAGE - 50 to 1000 Volts C U R R E N T-1.0 Ampere FEATURES This series is UL recognized under component index, file number E54214 Plastic material used carries Underwriters Laboratory flammability recognition 94V-0
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DF005M
DF10M
315C8
130C3
E54214
MIL-STD-202,
Tj-150
Tj-25
WIDTH-300|
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