X-BAND S-PARAMETER TRANSISTOR Search Results

X-BAND S-PARAMETER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

X-BAND S-PARAMETER TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC1708 Abstract: 2SC170 2SC1708A Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1708A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1708A is a silicon NPN epitaxial type high voltage low frequency Unitmm OUTLINE DRAWING t S.6MAX	OCR Scan	2SC1708A 2SC1708A 150MHz 270Hz X10-3 2SC1708 2SC170	PDF
2SA999L Abstract: 2SA999 trnsistor Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SA999L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA999L is a silicon PNP epitaxial type trnsistor designed for low Unftrmm OUTLINE DRAWING ^ 5.6MAX	OCR Scan	2SA999L 2SA999L -100mA, SC-43 270Hz 30kHz 2SA999 trnsistor	PDF
capacitor 10uF/63V Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	HVV0405-175 EG-01-DS10A 429-HVVi capacitor 10uF/63V ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS	PDF
L-Band 1200-1400 MHz Abstract: diode gp 429 Radar x band radar HV400 Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor	Original	HVV1214-075 HVV1214-075MHz, HVV1214-075 429-HVVi EG-01-PO08X4 L-Band 1200-1400 MHz diode gp 429 Radar x band radar HV400	PDF
BP 109 transistor Abstract: transistor BP 109 transistor ec5724 transistor GaAs FET s parameters transistor BP 915 EC5724 Text: EC5724 Wide Band Power FET GaAs Field Effect Transistor Description S The EC5724 device,available in chip form, is a power GaAs Field Effect Transistor, designed for wideband oscillator and amplifier applications, up to 18GHz. Individual via hole connection is made	Original	EC5724 EC5724 18GHz. 24dBm 30dBm 18GHz DSEC57247003 BP 109 transistor transistor BP 109 transistor ec5724 transistor GaAs FET s parameters transistor BP 915	PDF
2SC2320L Abstract: h a 431 transistor RO10K Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320L is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING Unit:mrn < 5.6MAX	OCR Scan	2SC2320L 2SC2320L 100nnA, NVS150mV SC-43 270Hz h a 431 transistor RO10K	PDF
DIE CHIP 51 FET Abstract: No abstract text available Text: EC4790 Wide Band Power FET GaAs Field Effect Transistor Description The EC4790 device,available in chip form, is a power GaAs Field Effect Transistor, designed for wideband oscillator and amplifier applications, up to 18GHz Individual via hole connection is made	Original	EC4790 EC4790 18GHz 23dBm 26dBm DSEC47907003 DIE CHIP 51 FET	PDF
UHF TRANSISTOR Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V	Original	HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet	PDF
2SA847 Abstract: 2SA847A knx-1 low noise preamplifier knx1 Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA847A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA847A is a silicon PNP epitaxial type high voltage low frequency OUTLINE DRAWING *5 .6 M A X low noise transistor. It has low noise at super low frequency range,low pulse	OCR Scan	2SA847A 2SA847A -120V 150MHz t270Hz 270Hz 2SA847 knx-1 low noise preamplifier knx1	PDF
2SC1310 Abstract: transistor 5104 db CC103 2cC103 Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1310 FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1310 is a silicon PNP epitaxial type transistor designed for low OUTLINE DRAWING 4.3MAX frequency low noise application.	OCR Scan	2SC1310 2SC1310 150mV 100mA, 270Hz 30kHz transistor 5104 db CC103 2cC103	PDF
transistor s 1014 Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200 Text: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor	Original	HVV1214-025 HVV1214-075 HVV1214-025 EG-01-PO05X5 429-HVVi EG-01-PO05X1 transistor s 1014 L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200	PDF
140-A525-SMD Abstract: Z1 SMD agere c8 c1 atc600 AGRB03GM JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa Text: Preliminary Data Sheet November 2004 AGRB03GM 3 W, 100 MHz—2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRB03GM is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	AGRB03GM AGRB03GM IS-95 DS04-259RFPP 140-A525-SMD Z1 SMD agere c8 c1 atc600 JESD22-C101A Sprague Electric SMD MOSFET N Z4 agere c8 vj1206y223kxa	PDF
BP 2818 Abstract: transistor K D 2499 UM 7222 G transistor GaAs FET s parameters Text: EC4711 Wide Band Power FET GaAs Field Effect Transistor Description The EC4711 is a Ku band Schottky barrier Field Effect Transistor with 0.5µm Aluminium gate. Individual via hole connection is made between each source pad and the gold plated back face metallization, through the	Original	EC4711 EC4711 21dBm 23Ghz 18dBm 30GHz DSEC47117003 BP 2818 transistor K D 2499 UM 7222 G transistor GaAs FET s parameters	PDF
1030mhz Abstract: 2TD12 HV400 SM200 1090mhz Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed	Original	HVV1011-040 HVV1214-075 HVV1011-040 1030-1090MHz, HVV1011-035 1030mhz 2TD12 HV400 SM200 1090mhz	PDF

wk 2 e transistor Abstract: transistor BU 705 BUT21 Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.	OCR Scan	BUT211 T0220AB T0220AB1 wk 2 e transistor transistor BU 705 BUT21	PDF
R T O BH TRANSISTOR Abstract: 2SC5168 transistor CR NPN Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5168 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5168 is a silicon NPN epitaxial type transistor. It is designed for low noise deferential amplify application.	OCR Scan	2SC5168 2SC5168 100mV 250to800 270Hz X10-3 R T O BH TRANSISTOR transistor CR NPN	PDF
transistor tt 2222 Abstract: smd 809 x transistor transistor SMD S33 Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures	OCR Scan	0DSfl737 BLT50 OT223 bbS3R31 0DS87M3 transistor tt 2222 smd 809 x transistor transistor SMD S33	PDF
smd transistor e7 Abstract: smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GC smd transistor UHF TRANSISTOR GP 809 max 809 ls Text: N AUER P H I L I P S / D I S C R E T E s iiiiv u n u u c io r s LTE B bbS3 S31 • DDSÖ7 3 7 BLT50 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION QUICK REFERENCE DATA RF performance at Ts < 60 °C in a common emitter class-B test circuit see	OCR Scan	bbS3S31 BLT50 OT223 OT223 MEA222 UBtM51 UEA223 smd transistor e7 smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GC smd transistor UHF TRANSISTOR GP 809 max 809 ls	PDF
GSM9004 Abstract: gsm module micro DCS1800 GSM900 RMPA1955-99 Text: RMPA1955-99 3V Dual-Band GSM Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module	Original	RMPA1955-99 RMPA1955-99 GSM9004 gsm module micro DCS1800 GSM900	PDF
smd transistor 331 Abstract: TRANSISTOR SMD m3a philips capacitor 16v smd transistor w J 3 58 smd transistor 54 JI SMD Transistor 1f 4312 020 36640 I5 smd transistor ptfe trimmer philips 100 pf smd transistor ats Text: N AMER PHILIPS/DISCRETE bRE T> • bb53T31 002ÖÖM7 M3Ö MARX Philios Semiconductors Data sheet Product specification status BLU56 UHF power transistor date of issue January 1991 FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile	OCR Scan	BLU56 bb53T31 OT223 OT223 MC3027 smd transistor 331 TRANSISTOR SMD m3a philips capacitor 16v smd transistor w J 3 58 smd transistor 54 JI SMD Transistor 1f 4312 020 36640 I5 smd transistor ptfe trimmer philips 100 pf smd transistor ats	PDF
sot172 Abstract: No abstract text available Text: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures	OCR Scan	BLV99/SL OT172 -SOT172D MDB012 7Z94685 sot172	PDF
Untitled Abstract: No abstract text available Text: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures	OCR Scan	BLT81 OT223	PDF
2SC763 Abstract: 2SC763 C 2SC7 Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC763 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCANGE, APPLICATION SIUCON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC763 is a silicon NPN epitaxial type transistor designed for high frequency amplify of FM radio tuner application.	OCR Scan	2SC763 2SC763 470MHz 100MHz) SC-43 2SC763 C 2SC7	PDF
2SA1928 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1928 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION _ SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1928 is a silicon PNP epitaxial type transistor. It is designed for low noise differential amplify application.	OCR Scan	2SA1928 2SA1928 -100V 270Hz 270Hz	PDF

X-BAND S-PARAMETER TRANSISTOR Search Results

X-BAND S-PARAMETER TRANSISTOR Result Highlights (5)

X-BAND S-PARAMETER TRANSISTOR Datasheets Context Search

2SC1708

2SA999L

capacitor 10uF/63V

L-Band 1200-1400 MHz

BP 109 transistor

2SC2320L

DIE CHIP 51 FET

UHF TRANSISTOR

2SA847

2SC1310

transistor s 1014

140-A525-SMD

BP 2818

1030mhz

wk 2 e transistor

R T O BH TRANSISTOR

transistor tt 2222

smd transistor e7

GSM9004

smd transistor 331

sot172

Untitled

2SC763

2SA1928