X-band Gan Hemt
Abstract: FMA3015 MIL-HDBK-263 9-GHz
Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Die: 4.52mmx3.05mm Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3015
52mmx3
FMA3015
FMA3015-000
FMA3015-000SQ
FMA3015-000S3
DS081118
FMA3015-000SB
X-band Gan Hemt
MIL-HDBK-263
9-GHz
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X-band Gan Hemt
Abstract: 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3015
FMA3015
FMA3015-000
FMA3015-000SQ
DS090306
FMA3015-000S3
X-band Gan Hemt
84-1 CONDUCTIVE EPOXY
MIL-HDBK-263
84-1 LMIT
x-Band Hemt Amplifier
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X-band Gan Hemt
Abstract: MIL-HDBK-263 HIGH POWER SUITABLE x-BAND AMPLIFIER X-band GaAs pHEMT MMIC Chip
Text: FMA3010 FMA3010 X-BAND 5 W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3010
FMA3010
FMA3010-000
FMA3010-000SQ
DS090727
FMA3010-000S3
X-band Gan Hemt
MIL-HDBK-263
HIGH POWER SUITABLE x-BAND AMPLIFIER
X-band GaAs pHEMT MMIC Chip
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X-band Gan Hemt
Abstract: MIL-HDBK-263 fma3010
Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3010
FMA3010
FMA3010-000
FMA3010-000SQ
DS090612
FMA3010-000S3
X-band Gan Hemt
MIL-HDBK-263
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X-band Gan Hemt
Abstract: MIL-HDBK-263 D20BT470K1EX
Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3010
FMA3010
FMA3010-000
FMA3010-000SQ
DS091124
FMA3010-000S3
X-band Gan Hemt
MIL-HDBK-263
D20BT470K1EX
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Untitled
Abstract: No abstract text available
Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3010
FMA3010
FMA3010-000
FMA3010-000SQ
DS091124
FMA3010-000S3
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x-band mmic core chip
Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
Text: A GaAs X-Band Multifunction Control MMIC Using the MSAG Process Abstract This paper describes efforts to achieve first pass design success for an X-band control MMIC consisting of multi-bit phase shifter, multi-bit attenuator, amplifier and serial-to-parallel
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MIL-STD-1686
Abstract: No abstract text available
Text: FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 12dB Gain 7.5W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3015 is a high performance X-Band
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FMA3015
FMA3015
22-A114.
MIL-STD-1686
MILHDBK-263.
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FMA3015
Abstract: No abstract text available
Text: FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 15dB Gain 5W Saturated Output Power at 9V pHEMT Technology VD GENERAL DESCRIPTION RF Input The FMA3015 is a high performance X-Band
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FMA3010
FMA3015
22-A114.
MIL-STD-1686
MILHDBK-263.
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FMA3012
Abstract: 22-A114 x-Band High Power Amplifier x-band mmic
Text: FMA3012 X-BAND 10W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 16.5dB Gain 10W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3012 is a high performance X-Band
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FMA3012
FMA3012
22-A114.
MIL-STD-1686
MILHDBK-263.
22-A114
x-Band High Power Amplifier
x-band mmic
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ka-band amplifier
Abstract: TLCA01981 TLC Precision Wafer Technology
Text: X-BAND TO KA-BAND AMPLIFIER TLC-KJGENAMP TLCA01981 • 9 to 37.5 GHz • PSAT >= 22 dBm • 2 Stage Design • GSS = 12 - 18 dB • Tunable for max GSS or PSAT Size: 2.17 x 1.3 x 0.1 mm DESCRIPTION AND APPLICATIONS The TLC-KJGEN Amplifier is a two-stage, MMIC
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TLCA01981)
100mA
ka-band amplifier
TLCA01981
TLC Precision Wafer Technology
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Untitled
Abstract: No abstract text available
Text: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that
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EMM5079X
EMM5079X
1906B,
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EMM5079
Abstract: EMM5079X
Text: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that
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EMM5079X
EMM5079X
12nce
1906B,
EMM5079
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EMM5079
Abstract: ku vsat amplifier ED-4701 F14G 450MA
Text: Preliminary ES/EMM5079X X/ Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 25 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5079X is a wide band power amplifier MMIC that
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ES/EMM5079X
ES/EMM5079X
1906B,
EMM5079
ku vsat amplifier
ED-4701
F14G
450MA
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MMIC X-band amplifier
Abstract: No abstract text available
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF
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RFHA5966A
RFHA5966AX
41dBm
RFHA5966A
Radar023
1N4148,
DS111023
MMIC X-band amplifier
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SN63
Abstract: TGA8658-SG 14GHZ GAAS
Text: Product Data Sheet August 5, 2008 Ku Band 2W Packaged Amplifier TGA8658-SG Key Features • • • • • • • • • Package Dimensions 6.4 x 6.4 x 3.0 mm Frequency Range: 13-17 GHz Optimized for VSAT band 13.75-14.5GHz 33 dB Nominal Gain Typical > 33.5 dBm Psat in VSAT band @ 7V
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TGA8658-SG
TGA8658-SG.
TGA8658-SG
SN63
14GHZ GAAS
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X-band amplifier
Abstract: 462 008 0004 00 AF
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5~13.3GHz Impedance Matched Zin/Zout=50 Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the
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EMM5068X
EMM5068X
X-band amplifier
462 008 0004 00 AF
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Untitled
Abstract: No abstract text available
Text: EMM5079ZB X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 24.0 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that
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EMM5079ZB
20pin
EMM5079ZB
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EMM5079
Abstract: emm5079zb
Text: EMM5079ZB X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 24.0 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that
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EMM5079ZB
20pin
EMM5079ZB
EMM5079
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EMM5079
Abstract: EMM5079ZB SPO-2114 RO4003 emm5079zbt MA2830
Text: EMM5079ZB X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 24.0 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that
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EMM5079ZB
20pin
EMM5079ZB
EMM5079
SPO-2114
RO4003
emm5079zbt
MA2830
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Untitled
Abstract: No abstract text available
Text: TGA4517 Ka Band Power Amplifier Key Features • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm
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TGA4517
TGA4517
35dBm
37GHz.
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ka band power amplifier
Abstract: TGA4517 ka band power mmic
Text: TGA4517 Ka Band Power Amplifier Key Features • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm
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TGA4517
TGA4517
35dBm
37GHz.
ka band power amplifier
ka band power mmic
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ka-band mixer
Abstract: 3 to 10 GHz mixer Ka-Band MMIC Mixer radar mmic TLCM01981 MX-JG95W46 Ka-band
Text: MMICM Mixer KKa-Band A-BAND MMIC IXER MX-JG95W46 TLCM01981 95C00328E-9 • 16 to 40 GHz RF • 16 to 40 GHz LO • Conversion Loss < 10 dB • Optional Up or Down Conversion • Optional IF Output Location • 100 % Tested Size: 1.08 x 1.95 x 0.1 mm DESCRIPTION AND APPLICATIONS
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MX-JG95W46
TLCM01981)
95C00328E-9
MX-JG95W46
ka-band mixer
3 to 10 GHz mixer
Ka-Band MMIC Mixer
radar mmic
TLCM01981
Ka-band
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EMM5068VU
Abstract: x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
Text: ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION
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ES/EMM5068VU
EMM5068VU
x-band power amplifier
610 108 001
ED-4701
RO4003
MMIC X-band amplifier
1300M
CLASS D WITH 494 POWER amplifier diagram
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