Untitled
Abstract: No abstract text available
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
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S71WSxxxJ
16-bit)
66MHz
S71WS
S71WS256/128/064J
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S29WS128J-MCP
Abstract: S29WS128J S29WS-J S29WS064J
Text: S29WS-J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet S29WS-J Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
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S29WS-J
16-Bit)
S29WS-J
S29WS128J-MCP
S29WS128J
S29WS064J
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PDF
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SA266-4
Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 S71WS-J FBGA 12x12 TRAY
Text: S71WS-J Based MCPs Stacked Multi-Chip Product MCP Package-on-Package (PoP) 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this
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S71WS-J
16-bit)
SA266-4
S71WS128JB0
S71WS128JC0
S71WS256JC0
FBGA 12x12 TRAY
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PDF
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COSMO MARKING
Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 WS128J cosmo MARKING CODE COSMO DEVICE MARKING COSMO DEVICE MARKING DATE cosmoram synchronous
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM ADVANCE DATASHEET Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
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Original
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S71WSxxxJ
16-bit)
80-ball
66MHz
S71WS
S71WS256/128/064J
COSMO MARKING
S71WS128JB0
S71WS128JC0
S71WS256JC0
WS128J
cosmo MARKING CODE
COSMO DEVICE MARKING
COSMO DEVICE MARKING DATE
cosmoram synchronous
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PDF
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Untitled
Abstract: No abstract text available
Text: WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Publication Number S29WS-J_00 Revision A Amendment 5 Issue Date March 31, 2006 Notice On Data Sheet Designations 6SDQVLRQ //& LVVXHV GDWD VKHHWV ZLWK $GYDQFH ,QIRUPDWLRQ RU 3UHOLPLQDU\ GHVLJQDWLRQV WR DGYLVH
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S29WS128J/064J
16-Bit)
S29WS-J
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PDF
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064J
Abstract: 25D1 3G2H 8-R 2R2 VBR080 WZR device marking marking w53
Text: WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Distinctive Characteristics $UFKLWHFWXUDO $GYDQWDJHV +DUGZDUH )HDWXUHV 6LQJOH YROW UHDG SURJUDP DQG HUDVH WR YROW
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Original
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S29WS128J/064J
16-Bit)
S29WS-J
064J
25D1
3G2H
8-R 2R2
VBR080
WZR device marking
marking w53
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PDF
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Untitled
Abstract: No abstract text available
Text: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this
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S71WS-J
16-bit)
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PDF
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Untitled
Abstract: No abstract text available
Text: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO
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S71WS-J
16-bit)
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PDF
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Untitled
Abstract: No abstract text available
Text: WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Architectural Advantages Performance Characteristics Single 1.8 volt read, program and erase (1.65 to
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Original
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S29WS128J/064J
16-Bit)
WS128J:
16Mb/48Mb/48Mb/
WS064J:
8Mb/24Mb/24Mb/8Mb
S29WS128J/064J
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PDF
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WS128J
Abstract: S29WS064J S29WS-J S29WS128J S29WS128J-MCP
Text: WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Distinctive Characteristics Architectural Advantages Hardware Features Single 1.8 volt read, program and erase (1.65 to 1.95 volt)
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S29WS128J/064J
16-Bit)
WS128J:
16Mb/48Mb/48Mb/
WS064J:
8Mb/24Mb/24Mb/8Mb
S29WS-J
WS128J
S29WS064J
S29WS128J
S29WS128J-MCP
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PDF
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Untitled
Abstract: No abstract text available
Text: WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE INFORMATION Notice to Readers: This document contains information on one or more products under development at Spansion LLC. The information is intended to
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S29WS128J/064J
16-Bit)
S29WS128J/064J
128/64is
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4a2g
Abstract: L8212 S71WS-J
Text: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO
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Original
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S71WS-J
16-bit)
4a2g
L8212
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PDF
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Untitled
Abstract: No abstract text available
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
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Original
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S71WSxxxJ
16-bit)
66MHz
S71WS
S71WS256/128/064J
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PDF
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S29WS128J-MCP
Abstract: No abstract text available
Text: WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Architectural Advantages Performance Charcteristics Single 1.8 volt read, program and erase (1.65 to
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Original
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S29WS128J/064J
16-Bit)
WS128J:
16Mb/48Mb/48Mbovided
WS128J/064J
S29WS128J-MCP
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PDF
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