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    WP 4046 Search Results

    WP 4046 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    8A34046E-000NLG# Renesas Electronics Corporation SETS for SyncE and OTN Visit Renesas Electronics Corporation
    8A34046E-000NLG Renesas Electronics Corporation SETS for SyncE and OTN Visit Renesas Electronics Corporation
    8A34046E-000NLG8 Renesas Electronics Corporation SETS for SyncE and OTN Visit Renesas Electronics Corporation
    77317-404-62LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Right angle Header, Through Hole, Double Row, 62 Positions ,2.54mm (0.100in) Pitch, Visit Amphenol Communications Solutions
    86840-466HLF Amphenol Communications Solutions BergStik® 2.54mm, Board to Board connector, Unshrouded Header, Through Hole, Double Row, 66 Positions, 2.54 mm Pitch, Right Angle, 8.08 mm (0.318in) Mating, 5.84 mm (0.23in) Tail. Visit Amphenol Communications Solutions

    WP 4046 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CR10

    Abstract: M58PR001LE M58PR256LE M58PR512LE a*12864
    Text: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


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    PDF M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit CR10 M58PR001LE M58PR256LE a*12864

    P46H

    Abstract: TFBGA105
    Text: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


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    PDF M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit P46H TFBGA105

    bc 107 common base h parameters

    Abstract: M58PR256J M58PR512J CR10
    Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


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    PDF M58PR256J M58PR512J bc 107 common base h parameters M58PR256J M58PR512J CR10

    TFBGA105

    Abstract: CR10 M58PR001LE M58PR512LE
    Text: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


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    PDF M58PR512LE M58PR001LE 512-Mbit TFBGA105 TFBGA105 CR10 M58PR001LE

    Untitled

    Abstract: No abstract text available
    Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V supply Flash memories Feature summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program


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    PDF M58PR256J M58PR512J 108MHz, 66MHz 256Mb 512Mb

    Untitled

    Abstract: No abstract text available
    Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


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    PDF M58PR256J M58PR512J M58PR512JE96Z5E M58PR512J

    Untitled

    Abstract: No abstract text available
    Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memories PRELIMINARY DATA Features summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant)


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    PDF M58PR256J M58PR512J 108MHz, 66MHz 256Mb 512Mb

    LM 4138

    Abstract: k 3919
    Text: CLD-AP20 REV 6 BINNING & LABELING Cree XLamp MC-E LED ® INTRODUCTION TABLE OF CONTENTS This document describes the product nomenclature Introduction. 2 required to select and order Cree XLamp MC-E LEDs.


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    PDF CLD-AP20 LM 4138 k 3919

    CREE MCE

    Abstract: cree led mce lm 3844 LM 386-3 3874 Cree optics transistor k 4212 wp 4046 4017
    Text: Cree XLamp® MC-E LED Binning and Labeling Introduction This document describes the product nomenclature required to select and order Cree XLamp MC-E LEDs. XLamp MC-E LEDs are tested and sorted into bins which are then combined into orderable kits identified by an order code.


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    PDF CLD-AP20 CREE MCE cree led mce lm 3844 LM 386-3 3874 Cree optics transistor k 4212 wp 4046 4017

    PC48F4400P0VB0E

    Abstract: No abstract text available
    Text: NumonyxTM StrataFlash Embedded Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 unique factory device identifier bits


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    PDF P30-65nm) 256-Mbit, 512-Mbit 256M/256M) 16-word 56-Lead 256-Mbit) P30-65nm PC48F4400P0VB0E

    strataflash 512 p30

    Abstract: JS28F128P30B85 pc28f128p30b JS28f256P30 1GB EASY BGA NOR FLASH JS28F256P30B95 TSOP 48 stacked die package JS28F256P PC28F PF48F4400
    Text: Intel StrataFlash Embedded Memory P30 1-Gbit P30 Family Datasheet Product Features High performance • Security — 85 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to• 64 user-programmable OTP bits


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    PDF 128-KByte 64-Mbit 128-Mbit RD48F3000P0ZBQ0 RD48F3000P0ZTQ0 PF48F3000P0ZBQ0 PF48F3000P0ZTQ0 256-Mbit RD48F4000P0ZBQ0 RD48F4000P0ZTQ0 strataflash 512 p30 JS28F128P30B85 pc28f128p30b JS28f256P30 1GB EASY BGA NOR FLASH JS28F256P30B95 TSOP 48 stacked die package JS28F256P PC28F PF48F4400

    JS28F256P30

    Abstract: PC48F4400 PC28F256P30BFE RC48F4400P PC28F256P30B JS28F256P30T PC48F4400P0 PC28F256P30 js28f256p RC28F256P30TF
    Text: Numonyx Flash Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 OTP bits, programmed with unique — 110 ns initial access for TSOP


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    PDF P30-65nm) 256-Mbit, 512-Mbit 256M/256M) 16-word 256Mb 64-ball 100ns 02-Dec-2011 JS28F256P30 PC48F4400 PC28F256P30BFE RC48F4400P PC28F256P30B JS28F256P30T PC48F4400P0 PC28F256P30 js28f256p RC28F256P30TF

    PC28F256P30BF

    Abstract: PC48F4400P0VB0E JS28F256P30 RC28F256P30TF Numonyx TE28F256P30BF PC28F256P30 JS28F256P30tf PC48F PF48F
    Text: NumonyxTM StrataFlash Embedded Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 unique factory device identifier bits


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    PDF P30-65nm) 256-Mbit, 512-Mbit 256M/256M) 16-word 512-word 512-word 130nm. 40MHz P30-65nm PC28F256P30BF PC48F4400P0VB0E JS28F256P30 RC28F256P30TF Numonyx TE28F256P30BF PC28F256P30 JS28F256P30tf PC48F PF48F

    PC28F256P30BF

    Abstract: PC48F4400P0VB0E PC28F256P30TF JS28F256P30BF RC28F256P30BF RC28F256P30TF PF48F4000P0ZBQE JS28F256P30TF RC48F4400P0VB0E PF48F4400P0VBQE
    Text: Numonyx Flash Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 OTP bits, programmed with unique — 110 ns initial access for TSOP


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    PDF P30-65nm) 256-Mbit, 512-Mbit 256M/256M) 16-word 512-word 512-word 130nm; P30-65nm 130nm. PC28F256P30BF PC48F4400P0VB0E PC28F256P30TF JS28F256P30BF RC28F256P30BF RC28F256P30TF PF48F4000P0ZBQE JS28F256P30TF RC48F4400P0VB0E PF48F4400P0VBQE

    PC28F256P30T85

    Abstract: JS28F256P30T95 RC48F4400P0VB00 PC28F640P30T85 JS28F256P30B95 RC28F640P30B85 JS28F256P30 RC28F256P30T85 PC28F640P30B85 306667
    Text: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


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    PDF 128-KByte PC28F256P30T85 JS28F256P30T95 RC48F4400P0VB00 PC28F640P30T85 JS28F256P30B95 RC28F640P30B85 JS28F256P30 RC28F256P30T85 PC28F640P30B85 306667

    JS28F128P33

    Abstract: 314749-002US JS28F256P33b95 strataflash 512 p33 3147* intel pc28f128p33b RC28F256P33 2x256MB PF48F4400
    Text: Intel StrataFlash Embedded Memory P33 Datasheet Product Features High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


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    PDF 52MHz 32-KByte 128-KByte 256-Mbit 64-Mbit 128-Mbit 512-Mbit RD48F2000P0XBQ0 RD48F2000P0XTQ0 JS28F128P33 314749-002US JS28F256P33b95 strataflash 512 p33 3147* intel pc28f128p33b RC28F256P33 2x256MB PF48F4400

    strataflash 512 p30

    Abstract: Migration Guide for Intel StrataFlash Memory J 3066* intel
    Text: Intel StrataFlash Embedded Memory P30 Family Datasheet Product Features High performance • Security — 85 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to• 64 user-programmable OTP bits


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    PDF 128-KByte 64-Mbit RD48F2000P0ZBQ0 RD48F2000P0ZTQ0 PF48F2000P0ZBQ0 PF48F2000P0ZTQ0 128-Mbit RD48F3000P0ZBQ0 RD48F3000P0ZTQ0 PF48F3000P0ZBQ0 strataflash 512 p30 Migration Guide for Intel StrataFlash Memory J 3066* intel

    intel MLC flash

    Abstract: JS28F256P33B95 JS28F256P33 JS28F256P33T95 JS28F128P pc28f256p33t85 PC48F4400P0TB00 PF48F2000P0XBQ0 strataflash reliability RC28F256P33T85
    Text: Intel StrataFlash Embedded Memory P33 Datasheet Product Features High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


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    PDF 52MHz 32-KByte 128-KByte 64-Mbit 130nm 128-Mbit 256-Mbit 512-Mbit* RD48F2000P0XBQ0 intel MLC flash JS28F256P33B95 JS28F256P33 JS28F256P33T95 JS28F128P pc28f256p33t85 PC48F4400P0TB00 PF48F2000P0XBQ0 strataflash reliability RC28F256P33T85

    JS28F256P33

    Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
    Text: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features „ „ „ „ High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst


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    PDF 52MHz 32-KByte 128-KByte 130nm 64-Mbit RD48F2000P0XBQ0 128-Mbit RD48F3000P0XBQ0 256-Mbit RD48F4000P0XBQ0 JS28F256P33 PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85

    JS28F256P30

    Abstract: PC28F256P30T85 js28f128p30 RC28F640P30B85 RC48F4400P0VB00 JS28F256P30B95 JS28F256P30T95 JS28F128P30T PC28F128P30B85 JS28F128P30B85
    Text: Intel StrataFlash Embedded Memory P30 Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


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    PDF 32-KByte 128-KByte 512-Mbit 64-Mbit RD48F2000P0ZBQ0 RD48F2000P0ZTQ0 PF48F2000P0ZBQ0 PF48F2000P0ZTQ0 128-Mbit RD48F3000P0ZBQ0 JS28F256P30 PC28F256P30T85 js28f128p30 RC28F640P30B85 RC48F4400P0VB00 JS28F256P30B95 JS28F256P30T95 JS28F128P30T PC28F128P30B85 JS28F128P30B85

    JS28F256P30

    Abstract: JS28F256P30T95 JS28F256P30B95 PC28F256P30T85 JS28F256P30T js48f4400p0vb00 RC48F4400P0VB00 JS28F128P30T85 PC28F256P30B85 PC28F640P30T85
    Text: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


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    PDF 128-KByte 512-Mbit 64-Mbit 128-Mbit 256-Mbit 512-Mbit* RD48F2000P0ZBQ0 RD48F3000P0ZBQ0 RD48F4000P0ZBQ0 RD48F4400P0VBQ0 JS28F256P30 JS28F256P30T95 JS28F256P30B95 PC28F256P30T85 JS28F256P30T js48f4400p0vb00 RC48F4400P0VB00 JS28F128P30T85 PC28F256P30B85 PC28F640P30T85

    JS28F256P30T95

    Abstract: JS28F256P30B95 PC28F256P30T85 306667 RC48F4400P0VB00 JS28F256P30 JS28F128P30B85 js48f4400p0vb00 PC28F128P30T85 PC28F640P30T85
    Text: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


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    PDF 128-KByte JS28F256P30T95 JS28F256P30B95 PC28F256P30T85 306667 RC48F4400P0VB00 JS28F256P30 JS28F128P30B85 js48f4400p0vb00 PC28F128P30T85 PC28F640P30T85

    PC28F128P30BF65

    Abstract: PC28F128P30BF PC28F640P30TF PC28F640P30TF65 js28f128p30tf75 JS28F640P30BF js28f640 js28f128p30tf PC28F640 JS28F128P30
    Text: Numonyx Axcell P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features „ High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode


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    PDF P30-65nm 128-Mbit, 64-Mbit 52MHz 256-word 40Mhz PC28F128P30BF65 PC28F128P30BF PC28F640P30TF PC28F640P30TF65 js28f128p30tf75 JS28F640P30BF js28f640 js28f128p30tf PC28F640 JS28F128P30

    ANSI C78.377

    Abstract: CREE MCE RGBW LM 3751 Lm 4046 cree lm
    Text: CLD-AP20 Rev 7A binning & labeling Cree XLamp MC-E LED ® MC-E White MC-E Color Introduction MC-E Dynamic White table of contents This document describes the product nomenclature Introduction. 1 required to select and order Cree XLamp MC-E LEDs.


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    PDF CLD-AP20 ANSI C78.377 CREE MCE RGBW LM 3751 Lm 4046 cree lm