M58PR512J Search Results

Contextual Info: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

Contextual Info: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V supply Flash memories Feature summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program

Contextual Info: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memories PRELIMINARY DATA Features summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant)

bc 107 common base h parameters

Abstract: M58PR256J M58PR512J CR10
Contextual Info: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

TFBGA105

Abstract: M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit
Contextual Info: M39P0R9080E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

TFBGA105

Abstract: KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax
Contextual Info: M39P0R8070E2 M39P0R9070E2 256 or 512Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst)

M69KB096AB

Abstract: PSRAM M36P0R9060E0 M58PR512J
Contextual Info: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

TFBGA105

Abstract: M39P0R9070E0 M58PR512J M65KA128AL
Contextual Info: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 128 Mbit (4 Banks of 2Mb x16) Low

23LIST

Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

PSRAM

Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
Contextual Info: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

PSRAM

Abstract: M36P0R9070E0 M58PR512J M69KB128AA
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory

M36P0R9070E0

Abstract: M58PR512J M69KB128AB
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

BGA-Z85

Abstract: ADQ0-ADQ15 M36P0R9060N0 M69KM096AA
Contextual Info: M36P0R9060N0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

nor flash 1.8V

Abstract: PSRAM M36P0R9060E0 M58PR512J
Contextual Info: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

TFBGA105

Abstract: TFBGA-105 M39P0R9070E0 M58PR512J M65KA128AL
Contextual Info: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory