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    WL 1281 Search Results

    WL 1281 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    27C128-12MD Rochester Electronics LLC Replacement for Microchip part number 27C128-12MD. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    845-12.8-1SC7I8 Renesas Electronics Corporation 25.4 x 22.1mm, Oven-Controlled, HCMOS, SMD, Oscillator (OCXO) Visit Renesas Electronics Corporation
    826A-12.8-1JX4I Renesas Electronics Corporation HCMOS, Ceramic, Seam-Sealed, SMD, Oscillator Visit Renesas Electronics Corporation
    826A-12.8-1JX4I8 Renesas Electronics Corporation HCMOS, Ceramic, Seam-Sealed, SMD, Oscillator Visit Renesas Electronics Corporation
    845-12.8-1SC7I Renesas Electronics Corporation 25.4 x 22.1mm, Oven-Controlled, HCMOS, SMD, Oscillator (OCXO) Visit Renesas Electronics Corporation
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    WL 1281 Price and Stock

    ADDA USA Corporation AA1281UB-AW-LF

    AC Fans AC Fan, 120x120x38mm, 115VAC, 60Hz, 107CFM, 34.5W, 46.4dBA, Ball, Terminal
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AA1281UB-AW-LF 12
    • 1 $19.79
    • 10 $18.89
    • 100 $14.12
    • 1000 $12.14
    • 10000 $12.14
    		Buy Now

    WL 1281 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    wl 1281

    Abstract: A 1266
    Text: 2009.10.21 14:19 페이지90 001 refine-4도 2540DPI 175LPI T MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS RZ series WL ● DIMENSIONS & MAXIMUM PERMISSIBLE RIPPLE CURRENT WV 6.3 10 Impedance Ripple current Item ØDxL


    Original     		PDF 2540DPI 175LPI 100kHz 120Hz 100kHz wl 1281 A 1266

    Mys 99 178

    Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
    Text: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B


    Original     		PDF AA994896G 2A-M18KS08-WP-C1 1234C 11PFA 14PFA 1001D VAP21001C VAP21004H VAP21015C 2001G Mys 99 178 MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1256 404/804/164 Q HIGH PERFORMANCE 256Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns


    Original     		PDF V59C1256 256Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1256 404/804/164 QA HIGH PERFORMANCE 256Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns


    Original     		PDF V59C1256 256Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667

    Untitled

    Abstract: No abstract text available
    Text: W979H6KB / W979H2KB LPDDR2-S4B 512Mb Table of Contents1. GENERAL DESCRIPTION . 6 2. FEATURES . 6


    Original     		PDF W979H6KB W979H2KB 512Mb A01-001

    74164 truth table

    Abstract: W978H6KB 74191, 74192, 74193 circuit diagram
    Text: W978H6KB / W978H2KB LPDDR2-S4B 256Mb Table of Contents1. GENERAL DESCRIPTION . 6 2. FEATURES . 6


    Original     		PDF W978H6KB W978H2KB 256Mb A01-001 74164 truth table 74191, 74192, 74193 circuit diagram

    v59c1512

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 Q HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667

    Untitled

    Abstract: No abstract text available
    Text: W97AH6KB / W97AH2KB LPDDR2-S4B 1Gb Table of Contents1. GENERAL DESCRIPTION . 6 2. FEATURES . 6


    Original     		PDF W97AH6KB W97AH2KB A01-001

    NT6TL32M

    Abstract: No abstract text available
    Text: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 


    Original     		PDF 512Mb NT6TL16M32AQ/ NT6TL32M16AQ NT6TL32M

    NT2GC64B8HC0NS

    Abstract: 204 pin so-DIMM DDR3 connector sodimm ddr3 connector PCB footprint DDR3 DIMM footprint NT2GC64B8HC0NS-CG DDR3 DIMM SPD DDR3 DIMM SPD JEDEC Nanya DDR3 PC3-10600 PC3 "cross reference"
    Text: PC3-8500 / PC3-10600 Un-buffered DDR3 SO-DIMM NT2GC64B8HC0NS Based on DDR3-1066/1333 128Mx8 2GB SDRAM C-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500 PC3-10600 -BE -CG 7 9 Unit 533 667 tck – Clock Cycle 1.875


    Original     		PDF PC3-8500 PC3-10600 NT2GC64B8HC0NS DDR3-1066/1333 128Mx8 PC3-8500 204-Pin 256Mx64 NT2GC64B8HC0NS 204 pin so-DIMM DDR3 connector sodimm ddr3 connector PCB footprint DDR3 DIMM footprint NT2GC64B8HC0NS-CG DDR3 DIMM SPD DDR3 DIMM SPD JEDEC Nanya DDR3 PC3-10600 PC3 "cross reference"

    hynix lpddr2

    Abstract: Elpida LPDDR2 Memory elpida lpddr2 ELPIDA mobile dram LPDDR2 lpddr2 spec lpddr2 spec HYNIX LPDDR2 1Gb Memory LPDDR2 SDRAM hynix hynix lpddr2 sdram samsung lpddr2
    Text: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 


    Original     		PDF 512Mb NT6TL16M32AQ/ NT6TL32M16AQ hynix lpddr2 Elpida LPDDR2 Memory elpida lpddr2 ELPIDA mobile dram LPDDR2 lpddr2 spec lpddr2 spec HYNIX LPDDR2 1Gb Memory LPDDR2 SDRAM hynix hynix lpddr2 sdram samsung lpddr2

    hynix lpddr2

    Abstract: ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory
    Text: 2Gb LPDDR2-S4 SDRAM NT6TL64M32AQ Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS, /DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)


    Original     		PDF NT6TL64M32AQ -64Meg 64M32 -168-ball hynix lpddr2 ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LD16160A IS43/46LD32800A 256Mb x16, x32 Mobile LPDDR2 S4 SDRAM ADVANCED INFORMATION JULY 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O


    Original     		PDF IS43/46LD16160A IS43/46LD32800A 256Mb 10MHz 533MHz 20Mbps 1066Mbps temperaturD16160A-3BLA2 IS46LD32800A-3BLA2 IS46LD16160A-25BLA2

    46LD16640A

    Abstract: LPDDR2 SDRAM
    Text: IS43/46LD16640A IS43/46LD32320A 1Gb x16, x32 Mobile LPDDR2 S4 SDRAM AUGUST 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O


    Original     		PDF IS43/46LD16640A IS43/46LD32320A 10MHz 400MHz 20Mbps IS46LD32320A-3BLA2 IS46LD32320A-3BPLA2 IS46LD16640A-25BLA2 IS46LD32320A -25BLA2 46LD16640A LPDDR2 SDRAM

    NT6TL128M32AQ-G1

    Abstract: NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2
    Text: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver


    Original     		PDF NT6TL128M32AI /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR NT6TL128M32AQ-G1 NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2

    NT6TL256T32AQ

    Abstract: NT6TL128M32AI hynix lpddr2 NT6TL128M32AQ-G1 LPDDR2 1Gb Memory NT6TL128M32 Hynix 4Gb LPDDR2 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 Elpida LPDDR2 Memory
    Text: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver


    Original     		PDF NT6TL128M32AI /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR NT6TL256T32AQ hynix lpddr2 NT6TL128M32AQ-G1 LPDDR2 1Gb Memory NT6TL128M32 Hynix 4Gb LPDDR2 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 Elpida LPDDR2 Memory

    DDR3 DIMM 240 pinout

    Abstract: No abstract text available
    Text: M2Y2G64CB8HC5N / M2Y2G64CB8HC9N 2GB: 256M x 64 Unbuffered DDR3 SDRAM DIMM 240pin Unbuffered DDR3 SDRAM MODULE Based on 128Mx8 DDR3 SDRAM C Die Features • Performance: Speed Sort DIMM  Latency fCK Clock Frequency PC3-8500 PC3-10600 -BE -CG 7 9 533


    Original     		PDF M2Y2G64CB8HC5N M2Y2G64CB8HC9N 240pin 128Mx8 PC3-8500 PC3-10600 240-pin 256Mx64 533MHz DDR3 DIMM 240 pinout

    NT1GC64BH8A1PS-BE

    Abstract: No abstract text available
    Text: NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 64Mx16 1GB / 128Mx8 (2GB) SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500


    Original     		PDF NT1GC64BH8A1PS NT2GC64B8HA1NS PC3-8500 PC3-10600 DDR3-1066/1333 64Mx16 128Mx8 PC3-8500 204-Pin NT1GC64BH8A1PS-BE

    JESD79-3

    Abstract: 204 pin so-DIMM DDR3 connector sodimm ddr3 connector PCB footprint NT2GC64B8HC0NS sstl15 DDR3-1066 DDR3-1333 PC3-10600 SSTL-15 SO-DIMM DDR3 ECC
    Text: PC3-8500 / PC3-10600 Un-buffered DDR3 SO-DIMM NT2GC64B8HC0NS Based on DDR3-1066/1333 128Mx8 2GB SDRAM C-Die Features •Performance: Speed Sort PC3-8500 PC3-10600 -BE -CG 7 9 DIMM CAS Latency fck – Clock Freqency Unit 533 667 tck – Clock Cycle 1.875


    Original     		PDF PC3-8500 PC3-10600 NT2GC64B8HC0NS DDR3-1066/1333 128Mx8 PC3-8500 204-Pin 256Mx64 JESD79-3 204 pin so-DIMM DDR3 connector sodimm ddr3 connector PCB footprint NT2GC64B8HC0NS sstl15 DDR3-1066 DDR3-1333 PC3-10600 SSTL-15 SO-DIMM DDR3 ECC

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LD16320A IS43/46LD32160A 512Mb x16, x32 Mobile LPDDR2 S4 SDRAM ADVANCED INFORMATION APRIL 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O


    Original     		PDF IS43/46LD16320A IS43/46LD32160A 512Mb 10MHz 533MHz 20Mbps 1066Mbps temperatu6320A-3BLA2 IS46LD32160A-3BLA2 IS46LD16320A-25BLA2

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LD16640A IS43/46LD32320A 1Gb x16, x32 Mobile LPDDR2 S4 SDRAM PRELIMINARY INFORMATION MARCH 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O


    Original     		PDF IS43/46LD16640A IS43/46LD32320A 10MHz 400MHz 20Mbps IS46LD16640A-3BLA2 IS46LD32320A-3BLA2 IS46LD16640A-25BLA2 IS46LD32320A -25BLA2

    204 pin so-DIMM DDR3 connector

    Abstract: NT1GC64BH ddr3-1333 2gb pc3-10600
    Text: NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 64Mx16 1GB / 128Mx8 (2GB) SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500


    Original     		PDF NT1GC64BH8A1PS NT2GC64B8HA1NS PC3-8500 PC3-10600 DDR3-1066/1333 64Mx16 128Mx8 204 pin so-DIMM DDR3 connector NT1GC64BH ddr3-1333 2gb pc3-10600

    3XXXS

    Abstract: jsw marking Typ41 marking code JSW A15L A15R IDT70V9389 IDT70V9389L 017L
    Text: A . /s ilk . 1 1 1 1 1 I W 0 WL |iB |B IB a F HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9389L Features: * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location


    OCR Scan     		PDF IDT70V9389L 5/9/12ns IDT70V9389L 500mW PK128-1) 70V9389 1152K 18-Bit) 3XXXS jsw marking Typ41 marking code JSW A15L A15R IDT70V9389 017L

    3XXXS

    Abstract: Typ41 marking code JSW IDT70V9289 IDT70V9289L xsxx
    Text: A . /s ilk |iB |B IB a F . 1 1 1 1 1 I W 0 WL HIGH-SPEED 3.3V 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9289L Features: * * * True Dual-Ported m em ory cells w hich allow sim ultaneous access of the sam e m em ory location


    OCR Scan     		PDF IDT70V9289L 5/9/12ns IDT70V9289L 500mW PK128-1) 70V9289 1024K 16-Bit) 3XXXS Typ41 marking code JSW IDT70V9289 xsxx