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    WINBOND MOBILE DRAM Search Results

    WINBOND MOBILE DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    9UMS9633BKLFT Renesas Electronics Corporation Ultra Mobile PC/Mobile Internet Device Visit Renesas Electronics Corporation

    WINBOND MOBILE DRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    w989d2kb

    Abstract: smd 6ac
    Text: W989D6KB / W989D2KB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential


    Original     		PDF W989D6KB W989D2KB 512Mb 304-words 166MHz. A01-002 w989d2kb smd 6ac

    Untitled

    Abstract: No abstract text available
    Text: W988D6FB / W988D2FB 256Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 256Mb Low Power SDRAM is a low power synchronous memory containing 268,435,456 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential


    Original     		PDF W988D6FB W988D2FB 256Mb 166MHz. A01-004

    W989D6KBGX

    Abstract: W989D2KBJX
    Text: W989D6KB / W989D2KB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential


    Original     		PDF W989D6KB W989D2KB 512Mb 304-words 166MHz. A01-003 W989D6KBGX W989D2KBJX

    Untitled

    Abstract: No abstract text available
    Text: W989D6CB / W989D2CB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential


    Original     		PDF W989D6CB W989D2CB 512Mb 304-words 166MHz. A01-006

    Untitled

    Abstract: No abstract text available
    Text: W987D6HB / W987D2HB 128Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential


    Original     		PDF W987D6HB W987D2HB 128Mb 166MHz. A01-003

    Untitled

    Abstract: No abstract text available
    Text: W987D6HB / W987D2HB 128Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 128Mb Low Power SDRAM is a low power synchronous memory containing 134,217,728 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential


    Original     		PDF W987D6HB W987D2HB 128Mb 166MHz. A01-004

    W989D2KB

    Abstract: smd 6ac W989D6 W989D2K
    Text: W989D6KB / W989D2KB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential


    Original     		PDF W989D6KB W989D2KB 512Mb 304-words 166MHz. A01-001 W989D2KB smd 6ac W989D6 W989D2K

    W25R128FV

    Abstract: W25Q128JV W25R128F W25Q128FV W25Q128F USON-8 W25Q80DL W978H6KB W25Q80BVSSIG
    Text: 2014 PRODUCT SELECTION GUIDE Mobile DRAM Specialty DRAM Code Storage Flash Memory Winbond Electronics Corporation is a worldwide leading supplier of specialty memory IC’s. The company provides memory solution backed by the expert capabilities of design, manufacturing


    Original     		PDF

    RTL8111

    Abstract: Realtek RTL8111 US15W processor atom battery z510 winbond mobile dram ETX kontron
    Text: conga-QA Module for ultra mobile applications Ultra Mobile Ultra compact Qseven module based on Intel Atom™ Processor Z5xx Formfactor Qseven Form Factor, 70x70 mm2 Lowest power consumption CPU Fast serial differential interfaces for high data bandwidth


    Original     		PDF 70x70 US15W RTL8111 Realtek RTL8111 US15W processor atom battery z510 winbond mobile dram ETX kontron

    W986416EH

    Abstract: W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620
    Text: PRODUCT GUIDE Winbond ISSI 2005 http://www.hengsen.cn 产品指南手册 PRODUCT GUIDE =WinbondISSI 授权香港及中国代理= 8 位单片机标准件 型号 W78C32C ROM 型式 ROM ROM RAM I/O 脚 外扩存储 器空间 工作速度 封装 定时器/


    Original     		PDF W78C32C Q4/04 IS25C64A-2 IS25C64A-3 16Kx8 IS25C128-2 W986416EH W9864G2EH W981216DH verilog DTMF decoder ISD1600 W9825G6CH W9812G6DH w981616ch SIS 730S isd1620

    W988D6F

    Abstract: winbond 05 solder ball material W988D2F
    Text: W988D6FB / W988D2FB 256Mb Mobile LPSDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W988D6FB W988D2FB 256Mb A01-003 W988D6F winbond 05 solder ball material W988D2F

    A01-002

    Abstract: by1 SMD winbond mobile dram A01002 W987D6HBGX
    Text: W987D6HB / W987D2HB 128Mb Mobile LPSDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W987D6HB W987D2HB 128Mb A01-002 A01-002 by1 SMD winbond mobile dram A01002 W987D6HBGX

    W988D6F

    Abstract: W988D2F
    Text: W988D6FB / W988D2FB 256Mb Mobile LPSDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W988D6FB W988D2FB 256Mb A01-002 W988D6F W988D2F

    W989

    Abstract: W989D2CB W989D6CB
    Text: W989D6CB / W989D2CB 512Mb Mobile LPSDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


    Original     		PDF W989D6CB W989D2CB 512Mb A01-004 W989 W989D2CB

    EIAJ-IC-121-17

    Abstract: JESD22-A110 EIAJ-ED4701-D323 EIAJ-IC-121-18 MIL-STD-883 PRESSURE COOKER failure rate SM stress migration EIAJ-IC-121 JESD22A110
    Text: Quality and Reliability Report 5. Reliability Testing The purpose of reliability testing is to ensure that The purpose of the high-temperature operating life products are properly designed and assembled by HTOL test is to determine the reliability of subjecting them to stress conditions that acceler-


    Original     		PDF MIL-STD-883, 85C/140C EIAJ-IC-121-17 JESD22-A110 EIAJ-ED4701-D323 EIAJ-IC-121-18 MIL-STD-883 PRESSURE COOKER failure rate SM stress migration EIAJ-IC-121 JESD22A110

    siemens F716

    Abstract: f9321 book national semiconductor diode PJ 0416 National PC87591 National PC87591l 74x541 74x377 pj 87 diode TCS 4199
    Text: To all our customers We are pleased to inform you that National Semiconductor Corporation's Advanced PC APC Division joined Winbond Electronics Corporation on May 5th 2005. As a result, in this document “National Semiconductor Corporation” and “National” should be understood as


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: W83194R-39/-39A 100MHZ 3-DIMM CLOCK Table of Contents1. GENERAL DESCRIPTION . 3 2. PRODUCT FEATURES . 3


    Original     		PDF W83194R-39/-39A 100MHZ

    ali m1487 B1

    Abstract: m6117c a1 ali m6117c a1 cpu M6117C ali m6117c m1487 b1 ALI chipset M1487 ALI 1487 RTL8029AS SBC-456
    Text: Table of Contents 7 11 6 8 12 9 13 10 14 15 siz e bC om pa ct SB Cs s PC ia LP Su X- ed 29 26 23 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: W83194R-39/-39A 100MHZ 3-DIMM CLOCK W83194R-39/39A Data Sheet Revision History Pages Dates Version Version Main Contents On Web 1 n.a. 2 n.a. 02/Apr 1.0 n.a. All of the versions before 0.50 are for internal use. 1.0 Change version and version on web site to 1.0


    Original     		PDF W83194R-39/-39A 100MHZ W83194R-39/39A 02/Apr

    Untitled

    Abstract: No abstract text available
    Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16


    Original     		PDF W94AD6KB W94AD2KB W94AD2KB A01-002

    W963A6BBN

    Abstract: W963A6BBN70 W963A6BBN80
    Text: W963A6BBN 512K WORD x 16BIT LOW POWER PSEUDO SRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


    Original     		PDF W963A6BBN 16BIT W963A6BBN W963A6BBN70 W963A6BBN80

    Untitled

    Abstract: No abstract text available
    Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16


    Original     		PDF W94AD6KB W94AD2KB W94AD2KB A01-003

    winband

    Abstract: W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV
    Text: t/vinband We D eliver Product Selection Guide - o 2010 Mobile RAM Specialty DRAM Graphics DRAM Flash Memory Memory Product Foundry Service Product Selection Guide 2010 Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR / DDR2 SDRAM


    OCR Scan     		PDF 300mm winband W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV

    W25X128

    Abstract: W25Q40 w25q64 W25Q16BW W25Q64bv W25X80BV W25Q32BV W25016BV winbond* W25Q W25X16AV
    Text: winband We D eliv er 2009 Product Selection Guide Mobile RAM Specialty DRAM Flash Memory Memory Product Foundry Service O W Product Selection Guide 2009 » Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR SDRAM 4 Specialty DRAM SDRAM DDR SDRAM


    OCR Scan     		PDF 300mm W25X128 W25Q40 w25q64 W25Q16BW W25Q64bv W25X80BV W25Q32BV W25016BV winbond* W25Q W25X16AV