OCT6100
Abstract: mf 672 WE VQE 24 E G-169 manual for mcf10p-128ms
Text: O OC C T 6 1 0 0 SS ee rr ii ee ss Voice Quality/Echo Cancellation Increasing system density while improving voice quality The OCT6100 Series family of voice processors performs high quality echo cancellation and Voice Features • 128-672 channel G.168-2002 echo canceller
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OCT6100
16mm-square
OCT6100pb2000-032
mf 672
WE VQE 24 E
G-169
manual for mcf10p-128ms
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OCT6100
Abstract: OCT8304 OCT9320 OCT9400 OCT9600 adaptive noise cancellation "internet telephony server" voip echo sound processors OCT6100 and music protection feature
Text: 16-672 Channel G.168-2002 Echo Canceller o 128 ms tail/channel on all channel densities o Audio Conferencing o Extensive Signaling Tone Detection/Generation The OCT6100 Series Superior Voice Quality lead-free option, the Octasic’s OCT6100 Series of voice processors supports densities from 16 to 672 channels on a single
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OCT6100
OCT6100pb2000-052
OCT8304
OCT9320
OCT9400
OCT9600
adaptive noise cancellation
"internet telephony server" voip
echo sound processors
OCT6100 and music protection feature
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Untitled
Abstract: No abstract text available
Text: PD - 9.1583A International I R Rectifier IR G 4 P C 5 0 K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tSc =1 Ops, @ 360V VCE Start , Tj = 125°C,
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485S4S2
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Untitled
Abstract: No abstract text available
Text: PD - 9.1576 International IOR Rectifier IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, ts C = 1 0 |J S , Vcc = 720V , T j = 125°C, V q e = 15V • Combines low conduction losses with high
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IRG4PH50K
t141b
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Untitled
Abstract: No abstract text available
Text: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,
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1RG4BC30K-S
S54SH
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Untitled
Abstract: No abstract text available
Text: PD - 9.1600 International I R Rectifyler IRG4BC20K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc = 1 0 jjs, @ 360V V CE start , T j= 1 2 5 ° C ,
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IRG4BC20K
SS45S
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WE VQE 24 E
Abstract: WE VQE 11 E WE VQE 24
Text: International IGR Rectifier PD - 9.1578 IRG4PH40K PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSUIATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tgc =10 js, 0 36 0V VCE (start , T j = 125°C, VSE = 15V
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IRG4PH40K
WE VQE 24 E
WE VQE 11 E
WE VQE 24
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Transistor BC 227
Abstract: No abstract text available
Text: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V
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554S2
Transistor BC 227
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Untitled
Abstract: No abstract text available
Text: 2 International I R Rectifier PD - 9.1578A IRG4PH40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, t*. =10ps, VCC = 720V , T j = 125°C, VGe =15V • Combines low conduction losses with high
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IRG4PH40K
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WE VQE 23 F
Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
Text: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,
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1RG4BC30K-S
generati08
WE VQE 23 F
WE VQE 23 E
WE VQE 11 E
1RG4BC30K-S
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irg4pc50k
Abstract: irg4pc50kv irgpc50m
Text: International TOR Rectifier PD - 9.1583A IRG4PC50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10[is, @ 360V VCE start , T j = 125°C, V g e =15V
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IRG4PC50K
irg4pc50k
irg4pc50kv
irgpc50m
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transistor iqr
Abstract: No abstract text available
Text: International IGR Recti fi'ier PD - 9.1600 IRG4BC20K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tjc =10|js, @360V VCE start , T j = 125°C, VGE= 15V
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IRG4BC20K
transistor iqr
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UEI 20 SP 010
Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"
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64-KBit-Sehreib--Iese-Speicher
086/11/B9
UEI 20 SP 010
Datenblattsammlung
u82720
mikroelektronik datenblattsammlung
VEB mikroelektronik
UB8820M
"halbleiterwerk frankfurt"
UEI 15 SP 020
Aktive elektronische Bauelemente 1988 Teil 2
B4207D
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ECJF
Abstract: No abstract text available
Text: International IOR Rectifier P D - 9.1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC20F
O-220AB
ECJF
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Untitled
Abstract: No abstract text available
Text: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high
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IRG4PH20K
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FAIRCHILD 3904
Abstract: No abstract text available
Text: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C912 6-Digit BCD Display Controller/Driver General Description T h e M M 74C 912 display controllers are interface elem ents, w ith m emory, th a t drive a 6-digit, 8-segm ent LED display. The display controllers receive data inform ation through 5
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MM74C912
FAIRCHILD 3904
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Untitled
Abstract: No abstract text available
Text: SKM 300GB125D T = 25 °C, unless otherwise specified Absolute Maximum Ratings Symbol IGBT | Conditions V CES Tj = 25 °C •c Tj = 150 °C 1200 V 300 A = 80 °C 210 A 400 A ±20 V 10 MS T case = 2 5 ° C 260 A = 80 °C 180 A 400 A 1800 A 500 A -4 0 .+ 150
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300GB125D
M300G125
XLS-24
XLS-23
CASED56
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1.8 degree bipolar stepper motor
Abstract: No abstract text available
Text: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution
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IXMS150
24-Pin
4bfib22b
1.8 degree bipolar stepper motor
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4794A CMOS LSI I N0.4794A LC3564S, SM, SS-70/85/10 64K 8192 words x 8 bits SRAM O ve rview The LC3564S, LC3564SM, and LC3564SS are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type SRAMS with a sixtransistor memory cell and feature high-speed
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EN4794A
LC3564S,
SS-70/85/10
LC3564SM,
LC3564SS
8192-word
TaS85
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information applikation
Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
Text: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK
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2N498
Abstract: 2N497 TRANSISTOR 2n657 2N657 2N657 JAN transistor 2N656 2N657 transistor TC 30i 2N497S 2N498S
Text: MIL SPECS I C | Q0D01ES 0000537 S "T~ 35 MIL-S-19500/74E AMENDMENT 4 11 AUGUST 1986 SUPERSEDING AMENDMENT 3 26 June 1978 MILITARY SPECIFICATION S E M I C O N D U C T O R DE VICE, T R A N S I S T O R , N P N , SI LICON, M E D I U M - P O W E R T Y P E S 2 N 4 9 7 , 2N498, 2N656, 2N657 ,
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0Q001BS
MIL-S-19500/74E
2N497,
2N498,
2N656,
2N657
2N497S,
2N498S,
2N656S,
2N657S
2N498
2N497
TRANSISTOR 2n657
2N657
2N657 JAN
transistor 2N656
2N657 transistor
TC 30i
2N497S
2N498S
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VEB mikroelektronik
Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Text: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden
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wf vqe 24 d
Abstract: tr 13001 WF VQE 13 X2816A 60395 xicor WE VQE 11 E WE VQE 24 E wf vqe 24 f WF VQE 22 c WF VQE 11 E
Text: 1 MIL-M-38510/227 27 MARCH 1987 M IL IT A R Y S P E C IF IC A T IO N M IC R O C IR C U IT S , D I G I T A L , NMOS, 16,384 B I T , E L E C T R IC A L L L Y E R A S A B L E , PROGRAMMABLE READ-ONLY MEMORY E E P R O M , MONOLITHIC S IL IC O N T h is s p e c i f i c a t i o n is
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MIL-M-38510/227
MIL-M-38510,
MIL-M-38510
MIL-M-38510.
X2816A-45/XIC0R
X2816A-35/XIC0R
X2816A-30/XICOR
X2816A-25/XIC0*
IL-M-38510/227
wf vqe 24 d
tr 13001
WF VQE 13
X2816A
60395 xicor
WE VQE 11 E
WE VQE 24 E
wf vqe 24 f
WF VQE 22 c
WF VQE 11 E
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Untitled
Abstract: No abstract text available
Text: HIP6018B Data Sheet Advanced PWM and Dual Linear Power Control The HIP6018B provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM controllers, a linear regulator and a linear controller as well
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HIP6018B
HIP6018B
12Vqq.
AN9805.
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