6116A
Abstract: CY6116A-55DMB 6117a MA 6116A CY6116A CY6117A 6116A-55
Text: 6116A: 11/8/89 Revision: Monday, November 8, 1993 CY6116A CY6117A Features Pin Configurations DIP/SOJ Top View A6 2 23 A8 A5 3 22 A9 A4 4 21 WE A3 5 25 WE OE A2 6 24 OE 19 A10 NC 7 23 A10 18 CE NC 8 22 NC 21 NC 8 17 I/O7 9 16 I/O6 10 I/O2 11 14 I/O4 GND 12
|
Original
|
PDF
|
CY6116A
CY6117A
CY6116A
CY6117A
6116A
CY6116A-55DMB
6117a
MA 6116A
6116A-55
|
6116A25
Abstract: CY6116A CY6117A CY6116A-55DMB
Text: 6116A: 11/8/89 Revision: Monday, November 8, 1993 CY6116A CY6117A Features Pin Configurations DIP/SOJ Top View A6 2 23 A8 A5 3 22 A9 A4 4 21 WE A3 5 25 WE OE A2 6 24 OE 19 A10 NC 7 23 A10 18 CE NC 8 22 NC 21 NC 8 17 I/O7 9 16 I/O6 10 I/O2 11 14 I/O4 GND 12
|
Original
|
PDF
|
CY6116A
CY6117A
CY6116A
CY6117A
6116A25
CY6116A-55DMB
|
ZR38500
Abstract: zoran zr38500 ac3 decoder Crystal 3225 pink noise generator 10uF CAPACITOR AC-3 pioneer corporation pioneer pll POKE
Text: Document Revision - May, 1996 An Application Note on the ZR38500 Dolby AC-3/ProLogic Decoder May, 1996 Designing with the ZR38500 Audio Decoder This document attempts to answer several frequently asked (and not asked) questions about using the ZR38500 Audio Decoder in a typical audio decoder system. It also suggests a few debugging steps we
|
Original
|
PDF
|
ZR38500
ZR38500,
ZR38501/38521
ZR38501
ZR38521
ZR38001
ZR38001
ZR38500.
zoran zr38500
ac3 decoder
Crystal 3225
pink noise generator
10uF CAPACITOR
AC-3
pioneer corporation
pioneer pll
POKE
|
CY7C1009
Abstract: CY7C109
Text: 009 CY7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low power version) • 2.0V Data Retention (Low power version) • Automatic power-down when deselected
|
Original
|
PDF
|
CY7C109
CY7C1009
CY7C109,
CY7C1009
CY7C109
|
CY7C109
Abstract: CY7C109-15PC CY7C109-15VC CY7C109-20PC CY7C109-20VC 7C10925
Text: CY7C109 128K x 8 Static RAM Features Functional Description D The CY7C109 is a highĆperformance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), an active
|
Original
|
PDF
|
CY7C109
CY7C109
CY7C109-15PC
CY7C109-15VC
CY7C109-20PC
CY7C109-20VC
7C10925
|
CY7C1009
Abstract: CY7C1009-12PC CY7C1009-12VC CY7C1009-15DMB CY7C1009-15PC CY7C1009-15VC A7210
Text: PRELIMINARY CY7C1009 128K x 8 Static RAM Features D D D D D D D Functional Description The CY7C1009 is a highĆperformance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2),
|
Original
|
PDF
|
CY7C1009
CY7C1009
CY7C1009-12PC
CY7C1009-12VC
CY7C1009-15DMB
CY7C1009-15PC
CY7C1009-15VC
A7210
|
c1826
Abstract: c1827 C1821 C1826 data C18-21 C1828 C1822 C1824 C1823 C182
Text: CY7C182 8Kx9 Static RAM Features The CY7C182, which is oriented toward cache memory applications, features fully static operation requiring no external clocks or timing strobes. The automatic power-down feature reduces the power consumption by more than 70% when the
|
Original
|
PDF
|
CY7C182
CY7C182,
c1826
c1827
C1821
C1826 data
C18-21
C1828
C1822
C1824
C1823
C182
|
CY7C1007
Abstract: CY7C1007-12PC CY7C1007-12VC
Text: PRELIMINARY CY7C1007 1M x 1 Static RAM Functional Description Features D D D D D D The CY7C1007 is a highĆperformance CMOS static RAM organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW chip enable CE and threeĆstate drivers.
|
Original
|
PDF
|
CY7C1007
CY7C1007
CY7C1007-12PC
CY7C1007-12VC
|
automatic change over switch circuit diagram
Abstract: CY7C1007 CY7C1007-12PC CY7C1007-12VC CY7C1007-15PC R1480
Text: 1CY 7C10 07 PRELIMINARY CY7C1007 1M x 1 Static RAM Features is provided by an active LOW chip enable CE and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed
|
Original
|
PDF
|
CY7C1007
automatic change over switch circuit diagram
CY7C1007
CY7C1007-12PC
CY7C1007-12VC
CY7C1007-15PC
R1480
|
c1826
Abstract: C182 CY7C182 c1827
Text: 182 CY7C182 8Kx9 Static RAM Features The CY7C182, which is oriented toward cache memory applications, features fully static operation requiring no external clocks or timing strobes. The automatic power-down feature reduces the power consumption by more than 70% when the
|
Original
|
PDF
|
CY7C182
CY7C182,
CY7C182
c1826
C182
c1827
|
c1826
Abstract: c1827 c1823 C182 CY7C182 R1481
Text: CY7C182 8Kx9 Static RAM Features • High speed — tAA = 25 ns • x9 organization is ideal for cache memory applications • CMOS for optimum speed/power • Low active power — 770 mW • Low standby power — 195 mW • TTL-compatible inputs and outputs
|
Original
|
PDF
|
CY7C182
CY7C182
CY7C182,
c1826
c1827
c1823
C182
R1481
|
c1827
Abstract: C182 CY7C182 CY7C182-20PC
Text: CY7C182 8KĂxĂ9 Static RAM Features Functional Description D High speed D x9 organization is ideal for cache Ċ The CY7C182 is a highĆspeed CMOS statĆ ic RAM organized as 8,192 by 9 bits and it is manufactured using Cypress's highĆperĆ formance CMOS technology. Access times
|
Original
|
PDF
|
CY7C182
CY7C182
CY7C182,
c1827
C182
CY7C182-20PC
|
CY7C171A
Abstract: CY7C172A
Text: CY7C171A CY7C172A 4K x 4 Static RAM with Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW • Low standby power
|
Original
|
PDF
|
CY7C171A
CY7C172A
7C171A)
CY7C171A
CY7C172A
7C171A
24-Lead
300-Mil)
|
C182
Abstract: CY7C182 R1481 C1827
Text: 1CY 7C18 2 CY7C182 8Kx9 Static RAM Features The CY7C182, which is oriented toward cache memory applications, features fully static operation requiring no external clocks or timing strobes. The automatic power-down feature reduces the power consumption by more than 70% when the
|
Original
|
PDF
|
CY7C182
CY7C182,
C182
CY7C182
R1481
C1827
|
|
CY7C187
Abstract: CY7C187A CY7C187A-15DMB CY7C187A-15LMB
Text: CY7C187A 64KĂxĂ1 Static RAM Features D D D D D D The CY7C187A is a highĆperformance CMOS static RAM organized as 65,536 words by 1 bit. Easy memory expansion is provided by an active LOW chip enable CE and threeĆstate drivers. The CY7C187A has an automatic powerĆdown
|
Original
|
PDF
|
CY7C187A
64Kx1
CY7C187A
CY7C187
CY7C187A-15DMB
CY7C187A-15LMB
|
C164A-2
Abstract: CY7C164A CY7C166A CYC164A CYC166A C164A
Text: CYC164A CYC166A 16K x 4 Static RAM Features three-state drivers. The CY7C166A has an active low output enable OE feature. Both devices have an automatic power-down feature, reducing the power consumption by 60% when deselected. • High speed — 20 ns • Output enable (OE) feature (7C166A)
|
Original
|
PDF
|
CYC164A
CYC166A
CY7C166A
7C166A)
22-Lead
300-Mil)
24-Lead
C164A-2
CY7C164A
CYC164A
CYC166A
C164A
|
CY7C171A
Abstract: CY7C172A
Text: CY7C171A CY7C172A Features D D D The CY7C171A and CY7C172A are highĆ performance CMOS static RAMs orgaĆ nized as 4096 by 4 bits with separate I/O. Easy memory expansion is provided by an active LOW chip enable CE and threeĆ state drivers. They have an automatic powĆ
|
Original
|
PDF
|
CY7C171A
CY7C172A
CY7C171A
CY7C172A
7C171A)
|
7c17
Abstract: CY7C171A CY7C172A C171A
Text: 1CY 7C17 2A CY7C171A CY7C172A 4K x 4 Static RAM with Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW
|
Original
|
PDF
|
CY7C171A
CY7C172A
7C171A)
CY7C171A
CY7C172A
7c17
C171A
|
C164A-2
Abstract: CY7C164A CY7C166A
Text: CY7C164A CY7C166A 16K x 4 Static RAM Features D The CY7C164A and CY7C166A are highĆ performance CMOS static RAMs orgaĆ as 16,384 by 4 bits. Easy memory exĆ nized pansion is provided by an active LOW chip enable CE) and threeĆstate drivers. The CY7C166A has an active low output enĆ
|
Original
|
PDF
|
CY7C164A
CY7C166A
CY7C164A
CY7C166A
7C166A)
C164A-2
|
CY7C161A
Abstract: CY7C162A
Text: CY7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 60% when deselected.
|
Original
|
PDF
|
CY7C161A
CY7C162A
7C161A)
38-00116-C
28-Lead
300-Mil)
28-Pin
MIL-STD-1835
CY7C161A
CY7C162A
|
Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Features • 32K x8 • Separate I/O • Fully registered — Address — Data in — Data out — CE, WE • Asynchronous output enable • Self-timed write • Transparent Write and write p ass through features
|
OCR Scan
|
PDF
|
CY7B159
167-MHz
44-pin
CY7B159
|
CY7C1009-15VC
Abstract: No abstract text available
Text: C Y 7 C 1 0 0 9 C Y 7 C 1 0 9 P Yi. PX :V «*1 128K 8 Static RAM active HIGH chip enable CE2 , an active LOW output enable (UE), and three-state drivers. Writing to the device is accom plished by taking chip enable one (CEi) and write enable (WE) inputs LOW and chip enable two (CE2) input HIGH. Data on
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when
|
OCR Scan
|
PDF
|
CY7B194
CY7B195
CY7B196
CY7B195
CY7B196
CY7B194,
7B195,
|
A10C
Abstract: CY7C106 C1089 7C106
Text: CYPRESS SEMICONDUCTOR 4bE D O □ 0 G b 2 cm b OCYP 'T - % - Z 3 .-Ì -0 CY7C106 PRELIMINARY CYPRESS SEMICONDUCTOR 262,144 x 4 Static R/W RAM Features Functional Description • Highspeed — U a = 25 ns • CMOS for optimum speed/power • Low active power
|
OCR Scan
|
PDF
|
CY7C106
CY7C106
ac35VC
CY7C106-35DMB
CY7C106-35LMB
CY7C106-45DC
CY7C106-45LC
CY7C106-45FC
CY7C106-45VC
CY7C106-45DMB
A10C
C1089
7C106
|