WAFER FRAME Search Results

Precon

Abstract: 857916 ACT245 EN-4088Z SN74ACT245N EPIC-1S
Contextual Info: TEXAS INSTRUMENTS Final Notification for the 150mm Diameter Wafer Qualification of the Sherman, Texas Wafer Fab February 19, 1999 Abstract The Texas Instruments Wafer Fabrication Facility in Sherman, Texas SFAB has completed the qualification to convert the wafer diameter from 125mm to 150mm for the EPIC-1S wafer fabrication

SQTP

Abstract: HDCP EEPROM 24xx eeprom SQTP checksum microchip 25LC040A eeprom interface EAR99 DS21808 spi 25xx smart card serial source code for eeprom 24LC
Contextual Info: Wafer Programming Service Purchasing HDCP Compliant EEPROM Wafers Secure Wafer Programming Service For HDCP Device Keys www.microchip.com Supporting Your HDCP Requirements Secure Wafer Programming Environment After your company has made a significant investment

IC weight sensor

Abstract: chloride ups circuit diagram relay 24v omron two leg infrared receiver led 12V ENERGY LIGHT CIRCUIT DIAGRAM EE-SPX303 hydrocarbon sensor hydrogen gas sensor omron plc Pulsating photoelectric Optical Sensor datasheet
Contextual Info: Wafer-carrier Mounting Photomicrosensors EE-SPY801/802 Photomicrosensors for detecting wafer-carrier mounting. • The mounting position is set with a pedestal. ■ The contact surface with the wafer carrier uses a special chemical-resistant fluoro-resin.

74LS04D

Abstract: mitsubishi lot code HBM 00-01 74ls04d datasheet TI Ji Bipolar LINEAR TECHNOLOGY date code JI Bipolar 500 mold compound JI Linear Bipolar Products TL 170C
Contextual Info: TEXAS INSTRUMENTS Final Notification of Mitsubishi Silicon of America MSA Second Source Wafer Qualification for Starting 125mm Substrates in Sherman, Texas Wafer Fab July 22, 1999 Abstract The Texas Instruments Wafer Fabrication Facility in Sherman, Texas (SFAB) has qualified Mitsubishi

Contextual Info: R Silicon Wafer Mapping Sensor F3M-S825-1 Allows Simultaneous Mapping of Up to 25 Silicon Wafers H Economical—one sensor detects most wafer types H 200 mm wafer size H Automatic and remote teaching capability H Self-diagnostic functions reduce downtime Ordering Information

Contextual Info: PD- 91875A IRG4CC81KB IRG4CC81KB IGBT Die in Wafer Form C 600 V Size 8.1 Ultra-Fast Speed Short Circuit Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

for IR IGBT die

Abstract: 300C IRG4CC71KB IRG4PSC71K MIL-HDBK-263
Contextual Info: PD- 91834A IRG4CC71KB IRG4CC71KB IGBT Die in Wafer Form C 600 V Size 7.1 Ultra-Fast Speed Circuit Rated Rated G 6" Wafer E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

Contextual Info: R Silicon Wafer Mapping Sensor F3M-S Allows Simultaneous Mapping of up to 25 Silicon Wafers H Economical, one sensor detects most wafer types, including dummy wafers H Models match wafer sizes of 300 mm, 200 mm and 150 mm H Automatic and remote teaching capability

OCI 531

Abstract: m1b marking s1225 IEC60529 F3M-S1213 F3M-S1225
Contextual Info: R Silicon Wafer Mapping Sensor F3M-S Allows Simultaneous Mapping of up to 25 Silicon Wafers H Economical, one sensor detects most wafer types, including dummy wafers H Models match wafer sizes of 300 mm, 200 mm and 150 mm H Automatic and remote teaching capability

IRFC24N15DB

Contextual Info: PD - 94750 IRFC24N15DB HEXFET Power MOSFET Die in Wafer Form N-CH l l G S Key Electrical Characteristics Packaged Part c Parameter Description 150V RDS(on) = 95mΩ (max.) 6" Wafer D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚

Contextual Info: PD - 95844 IRFC61N15DB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Tape and Reel, Unsawn Wafer, Sawn on Film ‚ G 150V RDS on = 0.032Ω (max.)‚ 6" Wafer S Key Electrical Characteristics (TO-220 package)d Parameter

Contextual Info: PD - 94786 IRFCG20B HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 1000V RDS on = 11Ω (max.) 5" Wafer S Key Electrical Characteristics (TO-220 Packaged Part)c Parameter Description

irfp4332

Abstract: irfp4332 mosfet IRFB4332
Contextual Info: PD - 97139 IRFC4332B PDP MOSFET HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ 250V RDS on = 0.033Ω (max.) 6" Wafer G S Key Electrical Characteristics (TO-220 package)d Parameter

Contextual Info: PD - 94786 IRFCG20B HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 1000V RDS on = 11Ω (max.) 5" Wafer S Key Electrical Characteristics (TO-220 Packaged Part)c Parameter Description

Contextual Info: PD - 94766 IRFC054VB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn wafer Sawn on Film ‚ G 60V RDS on = 9.0mΩ (max.) 6" Wafer S Electrical Characteristics (TO-247) Parameter V(BR)DSS RDS(on) VGS(th)

IRFP32N50K equivalent

Contextual Info: PD - 94730 IRFC32N50KB D HEXFET 500V RDS on = 0.16Ω (max.) 6" Wafer Power MOSFET Die in Wafer Form 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ Key Electrical Characteristics (TO-247 package) l G l Parameter V(BR)DSS RDS(on)

Contextual Info: PD - 95883 IRGC4050 IRGC4050 IGBT Die in Wafer Form l l C 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ 250V VCE on = 1.90V (max.) 6" Wafer G E Key Electrical Characteristics (TO-247 package) Parameter V(BR)CES VCE(ON) VGE(th)

E5-1101

Abstract: wafer prober AN115013 WM-40X0 SECS II wafer map format wafer map format wafer map 3d01
Contextual Info: AN115013 SECS II wafer map format Rev. 1.3 — 1 July 2009 Application note Document information Info Content Keywords wafer mapping, SECS II format, electronic inking Abstract This document gives a short guideline how to interpret wafer maps in SECS II format delivered with wafers by Business Line Identification.

IRFP460N equivalent

Contextual Info: PD - 94774 IRFC460NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 500V RDS on = 0.24Ω (max.) 6" Wafer S Electrical Characteristics (TO-247 Package) Parameter V(BR)DSS RDS(on)

for IR IGBT die

Contextual Info: PD - 95859 IRG4C254SB IRG4C254SB IGBT Die in Wafer Form l l C 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ 250V VCE on = 1.5V (max.) 6" Wafer G E Key Electrical Characteristics (TO-247 package) Parameter V(BR)CES VCE(ON) VGE(th)

IRL2203N equivalent

Contextual Info: PD - 94751A IRLC2203NB N-CH HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G 30V RDS on = 0.007Ω (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c

Contextual Info: PD - 94770 IRFC2204B HEXFET Power MOSFET Die in Wafer Form N-CH D l l 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 40V RDS on = 3.6mΩ (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c Min. Typ. Max. Test Conditions

Contextual Info: PD - 94751 IRLC2203NB N-CH HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G 30V RDS on = 0.007Ω (max.) 6" Wafer S Key Electrical Characteristics (Packaged Part)c

Contextual Info: PD - 97077 IRLC3103B HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G 30V RDS on = 0.019Ω (max.) 6" Wafer S Key Electrical Characteristics @TJ=25°C (unless otherwise specified) (D-Pak package)d