W3H64M64E
Abstract: No abstract text available
Text: White Electronic Designs W3H64M64E-XSBX 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Write latency = Read latency - 1* tCK Package: Commercial, Industrial and Military Temperature Ranges • 1.0mm pitch
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W3H64M64E-XSBX
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18CO
Abstract: No abstract text available
Text: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm Organized as 64M x 64 • 1.0mm pitch
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W3H64M64E-XSBX
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PS-8000
Abstract: W3H64M64E W3H32M64E-XSBX
Text: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Write latency = Read latency - 1* tCK Package: Commercial, Industrial and Military Temperature Ranges • 1.0mm pitch
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W3H64M64E-XSBX
W3H64M64E-XSBX
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W3H64M64E
W3H32M64E-XSBX
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H64M64E-XSBX 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Write latency = Read latency - 1* tCK Package: Commercial, Industrial and Military Temperature Ranges • 1.0mm pitch
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W3H64M64E-XSBX
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Untitled
Abstract: No abstract text available
Text: W3H64M64E-XSBX 512MB – 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 58% Space Savings vs. FBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm 43% I/O reduction vs FBGA
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W3H64M64E-XSBX
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667Mbs
533Mbs
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Abstract: No abstract text available
Text: W3H64M64E-XSBX 512MB – 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 58% Space Savings vs. FBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm 43% I/O reduction vs FBGA
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W3H64M64E-XSBX
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Write latency = Read latency - 1* tCK Package: Commercial, Industrial and Military Temperature Ranges Organized as 32M x 64, user configurable as 2 x
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W3H32M64E-XSBX
667Mbs
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W3J2256M72-XPBX
Abstract: W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX
Text: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 2GB 4GB Organization 128M x 64 128M x 72 256M x 72 512M x 72 Part Number W3J128M64G-XPBXƒ W3J128M72G-XPBXƒ W3J256M72G-XPBX* W3J2256M72-XPBX*
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W3J128M64G-XPBX
W3J128M72G-XPBX
W3J256M72G-XPBX*
W3J2256M72-XPBX*
W3H32M64E-XSBX
W3H32M72E-XSB2X
W3H64M64E-XSBX
W3H64M72E-XSBX
W3H128M72E-XSBX
W3H128M64E-XSBX
W3J2256M72-XPBX
W3J128M64G-XPBX
DDR1 512M
W3J128M72G-XPBX
256mb EEPROM Memory
ddr3 sdram chip 128mb
W3H128M72
w3j128m72
BGA NAND Flash
W72M64VB-XBX
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Mb/s Write latency = Read latency - 1* tCK Package: Commercial, Industrial and Military Temperature Ranges Organized as 32M x 64, user configurable as 2 x
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W3H32M64E-XSBX
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Abstract: No abstract text available
Text: i PEM 4.2 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR264M65PBG1 64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp
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AS4DDR264M65PBG1
64Mx64
AS4DDR264M65PBG1
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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w3j128m72
Abstract: ddr sram 256mb 2.5 pata DDR2 128M x 32 W3H128M72E-XSBX 256mb EEPROM Memory W3J128M72G-XNBX NAND Flash Qualification Reliability WEDPZ512K72V-XBX DDR2 x32
Text: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 1GB 1GB Organization 256M x 32 128M x 64 128M x 72 2 x 256M x 16 Part Number W3J256M32G-XNBXƒ W3J128M64G-XNBXƒ W3J128M72G-XNBXƒ W3J2256M16G-XNBXƒ
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W3J256M32G-XNBX
W3J128M64G-XNBX
W3J128M72G-XNBX
W3J2256M16G-XNBX
W3H32M64E-XSBX
W3H32M72E-XSB2X
W3H64M64E-XSBX
W3H64M72E-XSBX
W3H128M72E-XSBX
W3H128M64E-XSBX
w3j128m72
ddr sram 256mb
2.5 pata
DDR2 128M x 32
W3H128M72E-XSBX
256mb EEPROM Memory
W3J128M72G-XNBX
NAND Flash Qualification Reliability
WEDPZ512K72V-XBX
DDR2 x32
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Mb/s Write latency = Read latency - 1* tCK Package: Commercial, Industrial and Military Temperature Ranges Organized as 32M x 64, user configurable as 2 x
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W3H32M64E-XSBX
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W3H64M64E
Abstract: No abstract text available
Text: iPEM 4.2 Gb SDRAM-DDR2 AS4DDR264M65PBG1 64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • Proprietary Enchanced Die Stacked iPEM
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AS4DDR264M65PBG1
64Mx64
W3H64M64E
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