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    W3H64M64E

    Abstract: No abstract text available
    Text: White Electronic Designs W3H64M64E-XSBX 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges • 1.0mm pitch „


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    PDF W3H64M64E-XSBX 667Mbs W3H64M64E

    18CO

    Abstract: No abstract text available
    Text: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  Organized as 64M x 64 • 1.0mm pitch


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    PDF W3H64M64E-XSBX 18CO

    PS-8000

    Abstract: W3H64M64E W3H32M64E-XSBX
    Text: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667*, 533, 400 „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges • 1.0mm pitch


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    PDF W3H64M64E-XSBX W3H64M64E-XSBX PS-8000 W3H64M64E W3H32M64E-XSBX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H64M64E-XSBX 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges • 1.0mm pitch „


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    PDF W3H64M64E-XSBX 667Mbs

    Untitled

    Abstract: No abstract text available
    Text: W3H64M64E-XSBX 512MB – 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  58% Space Savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  43% I/O reduction vs FBGA


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    PDF W3H64M64E-XSBX 512MB 667Mbs 533Mbs 400Mbs

    Untitled

    Abstract: No abstract text available
    Text: W3H64M64E-XSBX 512MB – 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  58% Space Savings vs. FBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm  43% I/O reduction vs FBGA


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    PDF W3H64M64E-XSBX 512MB 667Mbs 533Mbs 400Mbs

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges „ Organized as 32M x 64, user configurable as 2 x


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    PDF W3H32M64E-XSBX 667Mbs

    W3J2256M72-XPBX

    Abstract: W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX
    Text: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 2GB 4GB Organization 128M x 64 128M x 72 256M x 72 512M x 72 Part Number W3J128M64G-XPBXƒ W3J128M72G-XPBXƒ W3J256M72G-XPBX* W3J2256M72-XPBX*


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    PDF W3J128M64G-XPBX W3J128M72G-XPBX W3J256M72G-XPBX* W3J2256M72-XPBX* W3H32M64E-XSBX W3H32M72E-XSB2X W3H64M64E-XSBX W3H64M72E-XSBX W3H128M72E-XSBX W3H128M64E-XSBX W3J2256M72-XPBX W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES  Data rate = 667, 533, 400 Mb/s  Write latency = Read latency - 1* tCK  Package:  Commercial, Industrial and Military Temperature Ranges  Organized as 32M x 64, user configurable as 2 x


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    PDF W3H32M64E-XSBX

    Untitled

    Abstract: No abstract text available
    Text: i PEM 4.2 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR264M65PBG1 64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp


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    PDF AS4DDR264M65PBG1 64Mx64 AS4DDR264M65PBG1

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


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    PDF

    w3j128m72

    Abstract: ddr sram 256mb 2.5 pata DDR2 128M x 32 W3H128M72E-XSBX 256mb EEPROM Memory W3J128M72G-XNBX NAND Flash Qualification Reliability WEDPZ512K72V-XBX DDR2 x32
    Text: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 1GB 1GB Organization 256M x 32 128M x 64 128M x 72 2 x 256M x 16 Part Number W3J256M32G-XNBXƒ W3J128M64G-XNBXƒ W3J128M72G-XNBXƒ W3J2256M16G-XNBXƒ


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    PDF W3J256M32G-XNBX W3J128M64G-XNBX W3J128M72G-XNBX W3J2256M16G-XNBX W3H32M64E-XSBX W3H32M72E-XSB2X W3H64M64E-XSBX W3H64M72E-XSBX W3H128M72E-XSBX W3H128M64E-XSBX w3j128m72 ddr sram 256mb 2.5 pata DDR2 128M x 32 W3H128M72E-XSBX 256mb EEPROM Memory W3J128M72G-XNBX NAND Flash Qualification Reliability WEDPZ512K72V-XBX DDR2 x32

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs W3H32M64E-XSBX 32M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES „ Data rate = 667, 533, 400 Mb/s „ Write latency = Read latency - 1* tCK „ Package: „ Commercial, Industrial and Military Temperature Ranges „ Organized as 32M x 64, user configurable as 2 x


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    PDF W3H32M64E-XSBX

    W3H64M64E

    Abstract: No abstract text available
    Text: iPEM 4.2 Gb SDRAM-DDR2 AS4DDR264M65PBG1 64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • Proprietary Enchanced Die Stacked iPEM


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    PDF AS4DDR264M65PBG1 64Mx64 W3H64M64E