W3 SOT23 Search Results

692B

Abstract: circuit fluorescent tube 24v FX3440 INVERTOR APPLICATION NOTE invertor lcd invertor ZTX692B ZTX690B AN14 FMMT489
Contextual Info: Design Note 22 Issue 2 June 1995 LCD Display Fluorescent Backlighting C1 Typical transformer detail for 24V operation: RM8 FX3440, 0.1mm gap. W1 500T W2 3T W3 + W4 34T Note 1: For this circuit topology the collector-emitter only experiences a high voltage when the base has been

FM11xx

Abstract: sot23 pet R05 SOT23
Contextual Info: TAPE & REEL SPECIFICATIONS 8-pin SOT23 Package Carrier Tape Critical Dimensions 2.0±0.05 Ø1.55±0.05 0.2±0.05 4.0±0.1 E A F W B0 B B A K0 R0.5 TYPICAL P1 A0 Ø1.0+0.1 -0 SECTION A-A SECTION B-B Lead Count Package 8 SOT23 8-pin Carrier Tape Dimensions mm

SOT23 JEDEC standard orientation

Abstract: w3 sot23 D0 sot23 CBVK741B019 F63TNR MMSZ5221B SOT23-3L JEDEC standard
Contextual Info: SOT-23 Std Tape and Reel Data SOT23-3L Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT23-3L parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

w3 sot23-5

Abstract: 011 B SOT23 W1 A SOT23
Contextual Info: July 1997 SOT23-5 Tape and Reel Specification SOT23-5 Tape and Reel Specification inches millimeters Tape Format Tape Section # Cavities Cavity Status 0 (min) Empty Sealed 75 (min) Empty Sealed Leader (Start End) Carrier Trailer (Hub End) Cover Tape Status

Philips MARKING CODE

Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked

4 phase stepper motor

Abstract: 12v transformer fx3311 FMMT618 ir remote control transmitter BCP54, BCX54 FMMT619 zetex product BCX54 LL5818
Contextual Info: Application Note 11 Issue 2 October 1995 Features and Applications of the FMMT618 and 619 High Current SOT23 replaces SOT89, SOT223 and D-PAK David Bradbury Switch 6A loads using a SOT23 transistor? Zetex has developed this new range to meet ever increasing demands for

EDSD-1L8MM-REEL

Abstract: QFn 64 tape carrier
Contextual Info: TAPE AND REEL TAPE AND REEL SPECIFICATIONS—SURFACE MOUNT Tape and Reel Packing Tape and reel packing is available for all SO, TSOT thin SOT23 , SOT-23 3L/4L, SOT-223, SSOP, TSSOP, QFN, DFN and DD packages in accordance with EIA Specification 481-D with the following exceptions: (DFN(DCB), TSOT and SC70

5630 SOT23

Abstract: FDN5630
Contextual Info: FDN5630 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23

5630 PKG

Abstract: 5630 SOT23 marking code 10 sot23 FDN5630
Contextual Info: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23

5630 PKG

Abstract: FDN5630 sot23 footprint
Contextual Info: FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS ON in a small SOT23

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

Contextual Info: LOW VOLTAGE DETECTOR NO. EA-056-prel 5[[[[$& 6 5,(6 OUTLINE 7KH 5 VHULHV DUH &026EDVHG YROWDJH GHWHFWRU ,&V ZLWK KLJK GHWHFWRU WKUHVKROG DFFXUDF\ DQG XOWUDORZ VXSSO\ FXUUHQW ZKLFK FDQ EH RSHUDWHG DW DQ H[WUHPHO\ ORZ YROWDJH DQG LV XVHG IRU V\VWHP UHVHW DV DQ H[DPSOH

CBVK741B019

Abstract: F63TNR MMBTA13 MPSA13 MPSA14 PN2222N PZTA13
Contextual Info: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

Contextual Info: LOW VOLTAGE DETECTOR NO. EA-056-0301 5[[[[$& 6 5,(6 OUTLINE 7KH 5 VHULHV DUH &026EDVHG YROWDJH GHWHFWRU ,&V ZLWK KLJK GHWHFWRU WKUHVKROG DFFXUDF\ DQG XOWUDORZ VXSSO\ FXUUHQW ZKLFK FDQ EH RSHUDWHG DW DQ H[WUHPHO\ ORZ YROWDJH DQG LV XVHG IRU V\VWHP UHVHW DV DQ H[DPSOH

25c reference top mark sot23

Abstract: sot23 A63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

Contextual Info: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

FQT13N60

Abstract: ic KA7812 7h top mark IMSYS777 MMBTA55 MPSA55 MPSA56 PZTA55 T0133 mark 2H SOT-23
Contextual Info: MMBTA55 PZTA55 C C E C B TO-92 SOT-23 E B B SOT-223 Mark: 2H E C PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. See MPSA56 for characteristics. Absolute Maximum Ratings*

NT 407 F TRANSISTOR

Abstract: laptop inverter ccfl Royer converter buck royer inverter lcd BAV99 application royer converter application note Royer Royer resonant GENERALISED RESISTOR DATASHEET CTX110092
Contextual Info: Application Note 14 Issue 2 March 1996 Transistor Considerations for LCD Backlighting High Efficiency DC to AC Conversion Neil Chadderton Introduction LCD Backlighting has generated widespread interest from many diverse disciplines within the engineering industry. This has no doubt been fueled

BEL 188 pnp TRANSISTOR characteristics

Abstract: bel 188 transistor pnp pnp transistor bel 188 F63TNR MMBTA64 MPSA64 PN2222N PZTA64 CBVK741B019 bel 188 transistor
Contextual Info: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBT2222A

Abstract: PN2222A PZT2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol

transistor bel 100

Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Contextual Info: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol

BEL 188 pnp TRANSISTOR characteristics

Abstract: bel 188 transistor pnp transistor bel 188 bel 188 transistor pnp Darlington transistor to 92 CBVK741B019 F63TNR MMBTA64 MPSA64 PN2222N
Contextual Info: MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

bulk inner box label ST

Contextual Info: 2N6427 MMBT6427 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted