W2 SMD TRANSISTOR Search Results

W2 SMD TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

W2 SMD TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
capacitor 2200 uF Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750 Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.	Original	PDF	BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08
transistor 2N2222 SMD Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980 Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
L05 SMD Abstract: w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286 Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-770 : T. Buss : 20-Jan-00 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG410W Double Poly	Original	PDF	RNR-T45-96-B-770 20-Jan-00 900MHz BFG410W BFG410W 900MHz. 900MHz CMP180 CMP210 L05 SMD w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286
Philips npo 0805 Abstract: 5Ghz lna transistor datasheet BFG425W 0805CS Series BFG425W APPLICATION philips satellite systems w2 smd transistor 0805CS CMP230 CMP231 Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0584 : T.F. Buss : 16-07-97 : P.G. Transistors & Diodes, Development 1.5GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly	Original	PDF	RNR-T45-97-B-0584 BFG425W BFG425W CMP266 s10mi CMP403 CMP351 CMP250 CMP270 Philips npo 0805 5Ghz lna transistor datasheet 0805CS Series BFG425W APPLICATION philips satellite systems w2 smd transistor 0805CS CMP230 CMP231
L05 SMD Abstract: CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 BFG425W CMP401 BFG400W CMP409 CMP231 Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-1025 : T.F. Buss : 10 Dec. 1996 : P.G. Transistors & Diodes, Development IMPROVED IP3 BEHAVIOUR OF THE 900MHz LOW NOISE AMPLIFIER WITH THE BFG425W	Original	PDF	RNR-T45-96-B-1025 900MHz BFG425W RNR-T45-96-B-771 BFG425W 900MHz, 900MHz: CMP257 CMP383 L05 SMD CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 CMP401 BFG400W CMP409 CMP231
BLF6G38S-25 Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 — 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance	Original	PDF	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
BLF6G10LS-160RN Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13 Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13
transistor 9575 Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1 Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
Untitled Abstract: No abstract text available Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN
SOT343 Abstract: No abstract text available Text: Philips Semiconductors Tape and Reel Packing - FETs General 2000. The ammopack has 80 layers of 25 transistors each. Each layer contains 25 transistors, plus one empty position in order to fold the layer correctly. The ammopack is accessible from both sides, enabling the user to choose	Original	PDF	MEA942 SOT343
transistor K 1352 Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 BLF6G27-135 BLF6G27LS-135 C4532X7R1H475M RF35 722 smd transistor Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	PDF	BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 C4532X7R1H475M RF35 722 smd transistor
30RF35 Abstract: VJ1206Y104KXB smd transistor equivalent table Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 — 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1.	Original	PDF	BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table
3F1 SMD Transistor Abstract: 3fx transistor transistor 3Fn 24 smd transistor lg smd transistor LF smd JH transistor celeritek CCS1933 F7104 smd transistor fh Text: CCS1933 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 2 Watt Amplifier Chip Set Features ❏ High Gain ≈ 35 dB ❏ +33 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2162 Applications	Original	PDF	CCS1933 CMM1301 CFK2162 CCS1933 CMM1301) CFK2162) PB-CCS1933 3F1 SMD Transistor 3fx transistor transistor 3Fn 24 smd transistor lg smd transistor LF smd JH transistor celeritek F7104 smd transistor fh
Untitled Abstract: No abstract text available Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 3 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.	Original	PDF	BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P

Untitled Abstract: No abstract text available Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 2 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.	Original	PDF	BLF2425M7L250P; BLF2425M7LS250P 2002/95/EC, BLF2425M7L250P 2425M7LS250P
Untitled Abstract: No abstract text available Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.	Original	PDF	BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P BLF2425M7LS250P 2425M7LS250P
Untitled Abstract: No abstract text available Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 2 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.	Original	PDF	BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P 2425M7LS250P
Untitled Abstract: No abstract text available Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 3 — 26 February 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.	Original	PDF	BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P BLF2425M7LS250P 2425M7LS250P
Untitled Abstract: No abstract text available Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.	Original	PDF	BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P
Untitled Abstract: No abstract text available Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 2 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.	Original	PDF	BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P
wy smd transistor Abstract: transistor k626 GHW Connectors g1n transistor TRANSISTOR f5j transistor smd 3f13 smd transistor EY transistor smd 3fh smd transistor fh f5j transistor Text: CCS2930 Product Information March 1996 1 of 2 2.4 to 2.5 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 30 dB ❏ +30 dBm Output Power @ 5 Volts ❏ 33% Efficient ❏ Small Size Functional Block Diagram CMM2301 CFK2062 Applications ❏ ISM Band Base Stations	Original	PDF	CCS2930 CMM2301 CFK2062 CCS2930 CMM2301) CFK2062) PB-CCS2930 wy smd transistor transistor k626 GHW Connectors g1n transistor TRANSISTOR f5j transistor smd 3f13 smd transistor EY transistor smd 3fh smd transistor fh f5j transistor
transistor l1w smd Abstract: ng52 mmic transistor E5 SMD Transistor Y04 SMD K62 smd mmic transistor E5 WG1 smd O2W transistor G7FH transistor g7x Text: CCS1930 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 32 dB ❏ +30 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2062 Applications	Original	PDF	CCS1930 CMM1301 CFK2062 CCS1930 CMM1301) CFK2062) CFK2062 PB-CCS1930 transistor l1w smd ng52 mmic transistor E5 SMD Transistor Y04 SMD K62 smd mmic transistor E5 WG1 smd O2W transistor G7FH transistor g7x
Untitled Abstract: No abstract text available Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN
2360d Abstract: BLF6G10-135RN BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 01 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN 2360d BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST

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W2 SMD TRANSISTOR Search Results

W2 SMD TRANSISTOR Result Highlights (5)

W2 SMD TRANSISTOR Datasheets Context Search

capacitor 2200 uF

transistor 2N2222 SMD

L05 SMD

Philips npo 0805

L05 SMD

BLF6G38S-25

BLF6G10LS-160RN

transistor 9575

Untitled

SOT343

transistor K 1352

30RF35

3F1 SMD Transistor

Untitled

Untitled

Untitled

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Untitled

wy smd transistor

transistor l1w smd

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2360d